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公开(公告)号：KR101360966B1
公开(公告)日：2014-02-11
申请号：KR1020070112841
申请日：2007-11-06
Applicant: 삼성전자주식회사
IPC: H01L33/22
Abstract: 본 발명은 질화물 단결정 성장용 기판과, 상기 기판 상에 성장된 하부 질화물 단결정층과, 상기 하부 질화물 단결정층 상면에 형성되며, 곡면인 표면을 가지며 금속물질로 이루어진 다수의 미세 금속구조; 및 상기 하부 질화물 단결정 상에 순차적으로 성장된 제1 도전형 질화물 반도체층, 활성층 및 제2 도전형 질화물 반도체층을 갖는 발광 적층체를 포함하는 질화물 반도체 발광소자를 제공한다.
질화물 단결정(nitride single crystal), 반사층(reflective layer), 발광소자(LED), 알루미늄(Al)-
公开(公告)号：KR101360964B1
公开(公告)日：2014-02-11
申请号：KR1020070073883
申请日：2007-07-24
Applicant: 삼성전자주식회사
Inventor： 정명구
IPC: H01L33/06
Abstract: 본 발명은 광효율을 향상시키고, 전류에 따른 파장변화를 최소화할 수 있는 질화물 반도체 발광소자 및 그 제조방법에 관한 것으로, n형 질화물 반도체층, p형 질화물 반도체층 및 상기 p형 질화물 반도체층과 상기 n형 질화물 반도체층 사이에 형성되며 제1양자우물층과 제1양자장벽층을 갖는 활성층을 포함한 질화물 반도체 발광소자에 있어서, 상기 제1양자우물층 내에 복수의 제2양자우물층 및 제2양자장벽층으로 이루어진 다중양자우물구조를 갖는 질화물 반도체 발광소자 및 그 제조방법을 제공한다.
LED, 질화물, GaN, 광효율, 압전필드, 파장변화-
公开(公告)号：KR1020100034338A
公开(公告)日：2010-04-01
申请号：KR1020080093408
申请日：2008-09-23
Applicant: 삼성전자주식회사
IPC: H01L33/12
Abstract: PURPOSE: A manufacturing method of a vertical semiconductor light emitting device is provided to facilitate the easy separation of a sapphire substrate by forming an ion injection layer on a boundary surface between a light emitting structure and a sapphire substrate. CONSTITUTION: A light emitting structure(120) is formed on a sapphire substrate(110). A first conduction semiconductor layer, an active layer, and a second conduction semiconductor layer are successively arranged within the light emitting structure. A conductive board(140) is welded on an exposed upper side of the light emitting structure. An ion is inserted through the exposed upper side of the sapphire substrate so that the ion insertion layer is formed on a boundary surface between the sapphire substrate and the light emitting structure. The ion insertion layer is etched so that the sapphire substrate is separated from the light emitting structure.
Abstract translation: 目的：提供垂直半导体发光器件的制造方法，以便通过在发光结构和蓝宝石衬底之间的边界面上形成离子注入层，便于蓝宝石衬底的分离。 构成：在蓝宝石衬底（110）上形成发光结构（120）。 第一导电半导体层，有源层和第二导电半导体层依次排列在发光结构内。 导电板（140）焊接在发光结构的暴露的上侧。 通过蓝宝石衬底的暴露的上侧插入离子，使得离子插入层形成在蓝宝石衬底和发光结构之间的边界表面上。 蚀刻离子插入层，使得蓝宝石衬底与发光结构分离。
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公开(公告)号：KR1020090010622A
公开(公告)日：2009-01-30
申请号：KR1020070073883
申请日：2007-07-24
Applicant: 삼성전자주식회사
Inventor： 정명구
IPC: H01L33/06
Abstract: A nitride semiconductor light emitting device and a manufacturing method thereof are provided to minimize the variation of a wavelength due to a current by reducing a piezoelectric field by forming a sub quantum well structure inside a quantum well layer. A nitride semiconductor light emitting device includes an n-type nitride semiconductor layer(120), a p-type nitride semiconductor layer(140), and an active layer(130). The active layer includes at least one first quantum well structure between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer. At least one second quantum well structure is included in a quantum well layer of the first quantum well structure.
Abstract translation: 提供一种氮化物半导体发光器件及其制造方法，通过在量子阱层内形成子量子阱结构，通过减小压电场来最小化由于电流导致的波长的变化。 氮化物半导体发光器件包括n型氮化物半导体层（120），p型氮化物半导体层（140）和有源层（130）。 有源层包括在n型氮化物半导体层和p型氮化物半导体层之间的至少一个第一量子阱结构。 在第一量子阱结构的量子阱层中包括至少一个第二量子阱结构。
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公开(公告)号：KR1020100085329A
公开(公告)日：2010-07-29
申请号：KR1020090004547
申请日：2009-01-20
Applicant: 삼성전자주식회사
Abstract: PURPOSE: A semiconductor light emitting device is provided to prevent an electrical characteristic from being reduce due to the change of the thickness of a p-type semiconductor layer by forming a surface Plasmon layer to be adjacent to an active layer. CONSTITUTION: An n-type semiconductor layer(102) is formed on a substrate(101). A surface Plasmon layer(103) is formed on the n-type semiconductor layer. An active layer(104) is formed on the surface Plasmon layer. A p-type semiconductor layer(105) is formed on the active layer. An n-type electrode(106a) and a p-type semiconductor electrode(106b) are formed on the n-type and the p-type semiconductor layers, respectively. The surface Plasmon layer includes a conductive via for conductive electricity.
Abstract translation: 目的：提供一种半导体发光器件，以通过形成与活性层相邻的表面等离子体层来防止由于p型半导体层的厚度的变化而导致的电特性的降低。 构成：在衬底（101）上形成n型半导体层（102）。 表面等离子体层（103）形成在n型半导体层上。 在表面等离子体层上形成有源层（104）。 在有源层上形成p型半导体层（105）。 分别在n型和p型半导体层上形成n型电极（106a）和p型半导体电极（106b）。 表面等离子体层包括用于导电的导电通孔。
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Patent Agency Ranking
公开(公告)号：KR101360965B1
公开(公告)日：2014-02-11
申请号：KR1020070135376
申请日：2007-12-21
Applicant: 삼성전자주식회사
IPC: H01L21/20
Abstract: 본 발명은 GaN계 반도체 소자 제조용 기판에 관한 것으로서, 특히 본 발명의 바람직한 실시 형태는, GaN계 반도체를 기반으로 하는 반도체 소자의 제조용 기판에 있어서, 상기 기판의 일면 중 GaN계 반도체 성장 면과 반대되는 면에 하나 이상의 홈이 형성된 것을 특징으로 하는 GaN계 반도체 소자 제조용 기판을 제공한다.
반도체소자, 기판, 변형, GaN-
公开(公告)号：KR1020100049451A
公开(公告)日：2010-05-12
申请号：KR1020080108609
申请日：2008-11-03
Applicant: 삼성전자주식회사
IPC: H01L33/06
Abstract: PURPOSE: A nitride semiconductor device is provided to improve a luminous efficiency by reducing an effect of polarization in a quantum well and increasing an overlapped region of wave function of an electronic and hole. CONSTITUTION: A nitride compound semiconductor device comprises an n-type nitride semiconductor layer(102), a p-type nitride semiconductor layer(104), and an active layer. An active layer is formed between the n-type and the p-type nitride semiconductor layer. A quantum-well layer and a quantum barrier layer(103a) are alternately laminated with each other. At least one of the quantum-well layers is divided into more than two sub quantum-well layers by an inter barrier(103c) is thinner than an adjacent quantum barrier layer or has low band gap energy.
Abstract translation: 目的：提供一种氮化物半导体器件，通过减少量子阱中的极化的影响并增加电子和空穴的波函数的重叠区域来提高发光效率。 构成：氮化物化合物半导体器件包括n型氮化物半导体层（102），p型氮化物半导体层（104）和有源层。 在n型和p型氮化物半导体层之间形成有源层。 量子阱层和量子势垒层（103a）彼此交替层叠。 至少一个量子阱层通过中间势垒（103c）被分成多于两个子量子阱层，比相邻量子势垒层薄或具有低带隙能量。
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公开(公告)号：KR1020090067647A
公开(公告)日：2009-06-25
申请号：KR1020070135376
申请日：2007-12-21
Applicant: 삼성전자주식회사
IPC: H01L21/20
CPC classification number: H01L21/02389 , H01L21/02634
Abstract: A substrate for manufacturing a GaN-based semiconductor device is provided to enhance electrical characteristics by preventing warpage or breakdown of a substrate due to a thermal expansion coefficient difference. A substrate(100) for manufacturing a GaN-based semiconductor device is made of Al2O3. The wafer is used as an epi-wafer. Two or more grooves(120a) are formed on a surface(120) which is opposite to a growing surface(110) of the GaN-based semiconductor device. The desired thickness of the substrate is 350Å and more. The desired diameter of the substrate is 4 inch and more. The grooves are formed to perform a function for dispersing stress such as tensile force or compressive force. The stress such as tensile force or compressive force is dispersed through the grooves in order to prevent the warpage or the breakdown of the substrate.
Abstract translation: 提供了用于制造GaN基半导体器件的衬底，以通过防止由于热膨胀系数差引起的衬底的翘曲或击穿来提高电特性。 用于制造GaN基半导体器件的衬底（100）由Al 2 O 3制成。 晶片用作外延晶片。 在与GaN基半导体器件的生长表面（110）相对的表面（120）上形成两个或更多个凹槽（120a）。 基板的所需厚度为350以上。 基板的期望直径为4英寸以上。 形成凹槽以执行用于分散诸如张力或压缩力的应力的功能。 拉伸力或压缩力等应力通过槽分散，以防止基板的翘曲或破裂。
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公开(公告)号：KR101552104B1
公开(公告)日：2015-09-14
申请号：KR1020090004547
申请日：2009-01-20
Applicant: 삼성전자주식회사
Abstract: 본발명은반도체발광소자에관한것으로서, 본발명의일 실시형태는, n형및 p형반도체층과이들사이에형성된활성층및 상기 n형및 p형반도체층중 적어도하나와상기활성층사이에형성되고, 금속입자및 절연물질을구비하되, 상기금속입자가상기절연물질에의해상기 n형및 p형반도체층중 적어도하나의방향으로밀봉된구조이며, 상기 n형및 p형반도체층중 적어도하나와상기활성층사이의전기도통을위한도전성비아를구비하는표면플라즈몬층을포함하는반도체발광소자를제공한다. 본발명에따르면, 표면플라즈몬공명을이용하여발광효율이향상된반도체발광소자를얻을수 있다. 특히, 본발명에따른반도체발광소자를사용할경우, 표면플라즈몬공명을위해채용되는금속이활성층내부로확산되는것을최소화할수 있다.
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公开(公告)号：KR1020100061130A
公开(公告)日：2010-06-07
申请号：KR1020080120028
申请日：2008-11-28
Applicant: 삼성전자주식회사
IPC: H01L33/02
Abstract: PURPOSE: A manufacturing method of a nitride semiconductor light emitting device is provided to easily separate a growth substrate from a light emitting structure by chemical etching a sacrificial layer formed between the light emitting structure and the growth substrate using a trench. CONSTITUTION: A sacrificial layer(120) is formed on a growth substrate. A first conductive type semiconductor layer(141), an active layer(143) and a light emitting structure(140) including laminated a second conductive semiconductor layer(145) are formed on the sacrificial layer. A conductive substrate(150) is welded on the second conductive semiconductor layer. A trench is formed on the growth substrate to expose the sacrificial layer. The growth substrate is separated from the light emitting structure by chemical etching the sacrificial layer using the trench. The light emitting structure separated from the growth substrate is separated to a chip size wanting.
Abstract translation: 目的：提供一种氮化物半导体发光器件的制造方法，以便通过使用沟槽化学蚀刻在发光结构和生长衬底之间形成的牺牲层来容易地将生长衬底与发光结构分离。 构成：在生长衬底上形成牺牲层（120）。 在牺牲层上形成第一导电类型半导体层（141），有源层（143）和包括层叠的第二导电半导体层（145）的发光结构（140）。 导电基板（150）焊接在第二导电半导体层上。 在生长衬底上形成沟槽以暴露牺牲层。 通过使用沟槽化学蚀刻牺牲层，将生长衬底与发光结构分离。 从生长衬底分离的发光结构被分离成想要的芯片尺寸。
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