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Patent Agency Ranking
公开(公告)号：KR1020120081729A
公开(公告)日：2012-07-20
申请号：KR1020110003015
申请日：2011-01-12
Applicant: 삼성전자주식회사 , 고려대학교 산학협력단
CPC classification number: D06F39/022 , D06F37/04 , D06F37/22 , D06F37/26 , D06F37/42 , D06F39/028 , D06F39/088 , D06F39/12 , Y02B40/50
Abstract: PURPOSE: A detergent box and a washing machine including the same are provided to have a remaining water exhaust structure in order not to remain water inside. CONSTITUTION: A detergent box comprises a siphon pipe(103), a siphon cap(104), a remaining water exhaust hole(110), and a switching unit(111). The siphon pipe is projected from the bottom part of a liquid detergent accommodation space. The siphon cap protects the siphon pipe in order to form a siphon flow path. The remaining water exhaust hole is formed at the bottom part of the liquid detergent accommodation space so that the residual water of the liquid detergent accommodation space can be exhausted. The switching unit exercises vertically by the buoyancy of the washing water accepted to the liquid detergent accommodation space. The switching unit opens and closes the remaining water exhaust hole.
Abstract translation: 目的：提供洗涤剂盒和包括该洗涤剂的洗衣机以具有剩余的排水结构，以便不将水留在内部。 构成：洗涤剂盒包括虹吸管（103），虹吸帽（104），剩余的排水孔（110）和切换单元（111）。 虹吸管从液体洗涤剂容纳空间的底部突出。 虹吸帽保护虹吸管，以形成虹吸管道。 剩余的排水孔形成在液体洗涤剂容纳空间的底部，从而可以排出液体洗涤剂容纳空间的残留水。 切换单元通过接受到液体洗涤剂容纳空间的洗涤水的浮力而垂直地进行操作。 开关单元打开和关闭剩余的排水孔。
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公开(公告)号：KR101757740B1
公开(公告)日：2017-07-27
申请号：KR1020110003015
申请日：2011-01-12
Applicant: 삼성전자주식회사 , 고려대학교 산학협력단
CPC classification number: D06F39/022
Abstract: 본발명의일측면은잔수가남지않는세제함을제공한다. 이를위해본 발명의사상에따른세제함은액체세제수용공간의바닥부에잔수배출홀이형성되고, 액체세제수용공간에수용되는세탁수의부력에의해잔수배출홀을개폐하는개폐유닛을포함한다.
Abstract translation: 本发明的一个方面提供了一种洗涤剂分配器，其中不残留水。 也洗涤剂在根据本发明的教导来实现这一在液体洗涤剂容纳空间底部的残留水出口孔被形成，并且包括一个打开和关闭单元打开和通过浮力的洗涤数被容纳在液体洗涤剂容纳空间关闭残留水出口孔。
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公开(公告)号：KR101552104B1
公开(公告)日：2015-09-14
申请号：KR1020090004547
申请日：2009-01-20
Applicant: 삼성전자주식회사
Abstract: 본발명은반도체발광소자에관한것으로서, 본발명의일 실시형태는, n형및 p형반도체층과이들사이에형성된활성층및 상기 n형및 p형반도체층중 적어도하나와상기활성층사이에형성되고, 금속입자및 절연물질을구비하되, 상기금속입자가상기절연물질에의해상기 n형및 p형반도체층중 적어도하나의방향으로밀봉된구조이며, 상기 n형및 p형반도체층중 적어도하나와상기활성층사이의전기도통을위한도전성비아를구비하는표면플라즈몬층을포함하는반도체발광소자를제공한다. 본발명에따르면, 표면플라즈몬공명을이용하여발광효율이향상된반도체발광소자를얻을수 있다. 특히, 본발명에따른반도체발광소자를사용할경우, 표면플라즈몬공명을위해채용되는금속이활성층내부로확산되는것을최소화할수 있다.
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公开(公告)号：KR1020100085329A
公开(公告)日：2010-07-29
申请号：KR1020090004547
申请日：2009-01-20
Applicant: 삼성전자주식회사
Abstract: PURPOSE: A semiconductor light emitting device is provided to prevent an electrical characteristic from being reduce due to the change of the thickness of a p-type semiconductor layer by forming a surface Plasmon layer to be adjacent to an active layer. CONSTITUTION: An n-type semiconductor layer(102) is formed on a substrate(101). A surface Plasmon layer(103) is formed on the n-type semiconductor layer. An active layer(104) is formed on the surface Plasmon layer. A p-type semiconductor layer(105) is formed on the active layer. An n-type electrode(106a) and a p-type semiconductor electrode(106b) are formed on the n-type and the p-type semiconductor layers, respectively. The surface Plasmon layer includes a conductive via for conductive electricity.
Abstract translation: 目的：提供一种半导体发光器件，以通过形成与活性层相邻的表面等离子体层来防止由于p型半导体层的厚度的变化而导致的电特性的降低。 构成：在衬底（101）上形成n型半导体层（102）。 表面等离子体层（103）形成在n型半导体层上。 在表面等离子体层上形成有源层（104）。 在有源层上形成p型半导体层（105）。 分别在n型和p型半导体层上形成n型电极（106a）和p型半导体电极（106b）。 表面等离子体层包括用于导电的导电通孔。
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公开(公告)号：KR1020090103114A
公开(公告)日：2009-10-01
申请号：KR1020080028497
申请日：2008-03-27
Applicant: 삼성전자주식회사
CPC classification number: H01L31/035218 , H01L31/022466 , H01L31/028
Abstract: PURPOSE: A photodetecting device and method of manufacturing the same are provided to obtain high ratio of dark current ratio to photo current. CONSTITUTION: The photo-detection device includes the first and second electrodes(110,130), and the photoelectric transformation layer(120). The first and the second electrode are separated. The photoelectric transformation layer is formed between the first electrode and the second electrode. The photoelectric transformation layer includes silicon quantum dots(121). The photoelectric transformation layer is made of silicon nitride(122) in which the silicon quantum dot is dispersed.
Abstract translation: 目的：提供一种光电检测器件及其制造方法，以获得较高的暗电流比与光电流的比率。 构成：光检测装置包括第一和第二电极（110,130）和光电转换层（120）。 分离第一和第二电极。 光电转换层形成在第一电极和第二电极之间。 光电转换层包括硅量子点（121）。 光电转换层由硅量子点分散的氮化硅（122）制成。
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