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公开(公告)号：KR101104492B1
公开(公告)日：2012-01-12
申请号：KR1020090036923
申请日：2009-04-28
Applicant: 에스케이실트론 주식회사 , 삼성전자주식회사
Abstract: 단결정 기판 제조방법 및 그에 의해 제조된 단결정 기판 평가를 위한 열처리 방법을 제공한다. 상기 단결정 기판 제조방법은 단결정 기판을 제공한 후, 상기 기판 내에 베이컨시-산소 복합체를 형성하고, 상기 베이컨시-산소 복합체가 형성된 기판 내에 베이컨시를 주입하고 산소 석출물 핵 생성을 가속화시키는 것을 포함한다. 상기 단결정 기판 평가방법에서는 먼저, 전면으로부터 제1 깊이까지의 영역인 전방 표면층, 후면으로부터 제2 깊이까지인 후방 표면층, 및 상기 전방 표면층과 상기 후방 표면층 사이에 개재된 벌크층을 포함하는 단결정 기판를 제공한다. 상기 기판의 전후방 표면층들 내의 결함들을 제거하여 디누드존을 형성하고, 상기 벌크층 내에 산소 석출물을 형성시킨 후, 상기 산소 석출물을 성장시킨다.
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公开(公告)号：KR1020130053104A
公开(公告)日：2013-05-23
申请号：KR1020110118647
申请日：2011-11-15
Applicant: 삼성전자주식회사
CPC classification number: G06K9/78 , G01S7/4863 , G01S17/023 , G01S17/89 , G06K9/209 , H04N5/335 , H04N5/3696 , H04N13/00
Abstract: PURPOSE: An image sensor, an operating method thereof, and devices including the same are provided to generate an improved three-dimensional image, a three-dimensional color image, a three-dimensional thermal image, or a two-dimensional color thermal image by using a pixel array including thermal image pixels, depth pixels, and color pixels. CONSTITUTION: If pulse light generated from a light source is reflected from a target, an image sensor senses the reflected pulse light to measure a distance between the image sensor and the target(S10). The image sensor activates a color pixel array, a depth pixel array, and a thermal image pixel array according to a measured distance(S12). [Reference numerals] (S10) Measure a distance between an image sensor and a target; (S12) Activate at least one of color pixel, depth pixel, and thermal image pixel according to the measured distance
Abstract translation: 目的：提供一种图像传感器及其操作方法以及包括该图像传感器的装置，以通过以下方式生成改进的三维图像，三维彩色图像，三维热图像或二维彩色热图像 使用包括热图像像素，深度像素和彩色像素的像素阵列。 构成：如果从光源产生的脉冲光从目标反射，则图像传感器感测反射的脉冲光以测量图像传感器与目标之间的距离（S10）。 图像传感器根据测量距离激活彩色像素阵列，深度像素阵列和热像素阵列（S12）。 （附图标记）（S10）测量图像传感器和目标之间的距离; （S12）根据测量的距离激活彩色像素，深度像素和热图像像素中的至少一个
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公开(公告)号：KR1020150118885A
公开(公告)日：2015-10-23
申请号：KR1020140130817
申请日：2014-09-30
Applicant: 삼성전자주식회사
IPC: H01L27/146
CPC classification number: H01L27/1465 , H04N5/33 , H04N5/37455
Abstract: 이미지센서의단위픽셀은가시광선검출픽셀및 적외선검출픽셀을포함한다. 가시광선검출픽셀은외부로부터입사하는가시광선을광전변환소자를이용하여제 1 전하로변환하고, 제 1 전하의축적량에상응하는제 1 전기적신호를생성한다. 적외선검출픽셀은외부로부터입사하는적외선을상부전극과하부전극사이에적외선검출물질을포함하는적외선검출층을이용하여제 2 전하로변환하고, 제 2 전하의축적량에상응하는제 2 전기적신호를생성한다. 이때, 적외선검출층의적외선흡수량은상부전극에인가되는제 1 전압과하부전극에인가되는제 2 전압에의한바이어스에기초하여조절된다.
Abstract translation: 图像传感器的单位像素包括可见光检测像素和红外光检测像素。 可见光检测像素通过使用光电转换装置将从外部照射的可见光转换为第一电荷，并产生对应于第一电荷沉积的第一电信号。 红外光检测像素通过使用包括上电极和下电极之间的红外光检测材料的红外光检测层将从外部照射的红外光转换为第二电荷。 此时，红外光检测层的红外光吸附量基于施加到上电极的第一电压的偏压和施加到下电极的第二电压进行调整。
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Patent Agency Ranking
公开(公告)号：KR1020140075412A
公开(公告)日：2014-06-19
申请号：KR1020120143715
申请日：2012-12-11
Applicant: 삼성전자주식회사
IPC: H01L31/10
CPC classification number: H01L27/14625 , H01L27/14601 , H01L27/14605 , H01L27/14614 , H01L27/14627 , H01L31/02327 , H01L31/09 , H04N5/332 , H04N5/3745
Abstract: The present invention provides a photodetector and an image sensor including the same. The photodetector has a structure which includes conductive patterns and a middle layer interposed between the conductive patterns. A beam is focused on the middle layer by properly adjusting the length of the conductive pattern and the wavelength of the beam to generate joule heat. Therefore, the beam can be detected by changing the electrical resistance of the middle layer.
Abstract translation: 本发明提供一种光检测器和包括该光电检测器的图像传感器。 光检测器具有包括导电图案和介于导电图案之间的中间层的结构。 通过适当调整导电图案的长度和波长的波长来产生焦耳热，将光束聚焦在中间层上。 因此，可以通过改变中间层的电阻来检测光束。
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公开(公告)号：KR1020140069932A
公开(公告)日：2014-06-10
申请号：KR1020120137825
申请日：2012-11-30
Applicant: 삼성전자주식회사
IPC: H01L27/146 , H01L27/14
CPC classification number: H04N5/378 , H01L2924/0002 , H04N5/374 , H04N5/3745 , H01L2924/00
Abstract: A method of operating an image sensor comprises the steps of: thermoelectric-cooling a pixel by using a thermoelectric element having a thermoelectric bonding which is integrated in the pixel; and performing a photoelectric conversion operation by using the thermoelectric device. The thermoelectric-cooling step is a step of peltier-cooling the pixel by using a peltier device having a peltier bonding.
Abstract translation: 操作图像传感器的方法包括以下步骤：通过使用集成在像素中的具有热电接合的热电元件对像素进行热电冷却; 以及通过使用该热电装置进行光电转换操作。 热电冷却步骤是通过使用具有珀耳帖结合的珀耳帖装置来使像素冷却的步骤。
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公开(公告)号：KR1020130020417A
公开(公告)日：2013-02-27
申请号：KR1020110083046
申请日：2011-08-19
Applicant: 삼성전자주식회사
IPC: H01L29/78 , H01L21/336
CPC classification number: H01L29/4236 , H01L27/10876 , H01L27/10891 , H01L29/42368
Abstract: PURPOSE: A semiconductor device is provided to reduce the resistance of a word line and a gate induction drain leakage by a gate electrode pattern. CONSTITUTION: A substrate(110) has a trench(111) in an active area. A gate insulation layer(124) is formed in the trench. A gate electrode pattern(130a) is formed on the gate insulation layer and includes a first part which protrudes to the upper side of the substrate. A dielectric pattern is formed on the gate electrode pattern and fills the trench.
Abstract translation: 目的：提供一种半导体器件，用于通过栅电极图案降低字线的电阻和栅极感应漏极泄漏。 构成：衬底（110）在有源区域中具有沟槽（111）。 在沟槽中形成栅极绝缘层（124）。 栅极电极图案（130a）形成在栅极绝缘层上，并且包括突出到基板的上侧的第一部分。 在栅极电极图案上形成介质图案并填充沟槽。
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公开(公告)号：KR1020140058208A
公开(公告)日：2014-05-14
申请号：KR1020120124944
申请日：2012-11-06
Applicant: 삼성전자주식회사
IPC: H01L27/146
CPC classification number: H01L31/0324 , H01L27/14665 , H01L31/02164 , H01L31/109
Abstract: An image sensor is provided. The image sensor comprises a substrate; a first material membrane arranged on the substrate and containing chalcogen compounds; and a detecting unit connected to the first material membrane and detecting an electrical change in the first material membrane. The chalcogen compound contains at least one of A_xB_yS_1_-x-y, A_xB_yTe_1_-x-y, and A_xB_ySe_1-x-y (0
Abstract translation: 提供图像传感器。 图像传感器包括基板; 第一材料膜，布置在基底上并含有硫属化合物; 以及检测单元，连接到第一材料膜并检测第一材料膜中的电变化。 硫属化合物包含A_xB_yS_1_-x-y，A_xB_yTe_1_-x-y和A_xB_ySe_1-x-y（0
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公开(公告)号：KR1020100118213A
公开(公告)日：2010-11-05
申请号：KR1020090036923
申请日：2009-04-28
Applicant: 에스케이실트론 주식회사 , 삼성전자주식회사
Abstract: PURPOSE: A method for manufacturing mono-crystal substrates, a method for evaluating the mono-crystal substrates, and the mono-crystal substrates are provided to improve the bulk micro defect density in a surface proximal region by performing an additional oxygen precipitate growing process. CONSTITUTION: A mono-crystal ingot is grown(S10). A mono-crystal substrate is processed using the mono-crystal ingot(S20). The mono-crystal substrate undergoes a rapid thermal process(S30). The rapid thermal process includes a first rapid thermal processing step and a second rapid thermal processing step. A bulk-micro-defect inspection is performed(S40).
Abstract translation: 目的：提供单晶基板的制造方法，单晶基板的评价方法以及单晶基板，通过进行附加的氧沉淀生长工序来提高表面近端区域的体积微观缺陷密度。 构成：生长单晶锭（S10）。 使用单晶锭处理单晶基板（S20）。 单晶衬底经历快速热处理（S30）。 快速热处理包括第一快速热处理步骤和第二快速热处理步骤。 进行体显微缺陷检查（S40）。
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