Abstract:
A method for cleaning semiconductor manufacturing equipment using a remote plasma in a PEOX process is provided to prevent particles from being generated on a wafer by cleaning a process chamber so that an N2 gas does not remain in the process chamber. After a PEOX(Plasma Enhanced Oxide) process is completed, a SiH4 outlet line is opened to supply an N2 gas, thereby purging a process chamber(10). A remote plasma generator(36) supplies an NF3 gas during a predetermined time to generate a plasma. The SiH4 supply line is opened, and the N2 gas is supplied to the process chamber. The remote plasma generator supplies an Ar gas to the process chamber to generate the plasma. After the NF3 gas is removed from the process chamber and the process chamber, a second air valve(24) and a third air valve(26) are alternatively opened/closed to supply the N2 gas, with a first air valve(18) being opened.
Abstract:
일실시예에따른디바이스는사용자에의해선택된복수의작업을포함하는작업그룹을저장하는저장부, 상기작업그룹에포함된적어도하나의작업에대응되는윈도우를표시하는출력부및 상기표시된윈도우내에상기작업그룹에포함된다른작업을나타내는적어도하나의객체를함께표시하도록출력부를제어하는제어부를포함할수 있다.
Abstract:
Semiconductor manufacturing equipment and a management method thereof are provided to prevent a wafer from being polluted by cleaning a lift pin with cleaning gas. A management method of semiconductor manufacturing equipment includes the steps of: removing a wafer, which is subjected to a semiconductor manufacturing process, from a process chamber(110); if the number of the wafers subjected to the semiconductor manufacturing process reaches to the predetermined number or the semiconductor manufacturing process takes a predetermined time, supplying second reaction gas in the process chamber to clean an inner wall of the process chamber; and lifting a lift pin(116) out of the top of the heater blocks(114) installed at the bottom of the process chamber to expose the lift pin to the second reaction gas.
Abstract:
A beam diffraction apparatus and a method for selecting a diffraction angle of a beam are provided to easily control the diffraction angle of the beam by using plural optical panels being vertically stacked and rotating each optical panel around the center. A plurality of optical panels(110,120,130,140,150) are vertically stacked. Each of the optical panels includes a multiplicity of a DOEs(Diffractive optical Elements). The respective DOEs have different diffraction angles. The optical panels are independently rotated around the center. The optical panels allow a diffraction angle of a beam to be controlled easily.
Abstract:
웨이퍼 척을 레이저 빔으로 세정하는 장치 및 방법을 제시한다. 본 발명에 따르면, 노광을 위한 광원을 웨이퍼 상에 제공하는 렌즈부, 렌즈부 아래로 웨이퍼를 도입하되 웨이퍼의 레벨링을 측정하는 측정부 및 노광이 수행되는 노광부를 포함하는 웨이퍼 스테이지, 웨이퍼 스테이지 상에 올려져 웨이퍼를 지지하는 웨이퍼 척, 및 웨이퍼 척 상에 존재할 파티클에 레이저 빔을 조사하여 제거할 레이저 빔 조사부를 포함하는 노광 설비를 제시한다. 노광, 웨이퍼 스테이지, 레이저 빔, 디포커스, 파티클