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公开(公告)号：KR1020080044644A
公开(公告)日：2008-05-21
申请号：KR1020060113747
申请日：2006-11-17
Applicant: 삼성전자주식회사
IPC: H01L27/108 , H01L27/04
CPC classification number: C23C16/405 , C23C16/45553 , H01L21/02178 , H01L21/02181 , H01L21/02186 , H01L21/02189 , H01L21/0228 , H01L21/3141 , H01L21/3142 , H01L21/31604 , H01L21/3162 , H01L21/31641 , H01L21/31645
Abstract: A method for forming a metal oxide layer, and methods for manufacturing a gate structure and a capacitor using the same are provided to form the metal oxide layer in which impurities are reduced by atomic layer deposition. A method for forming a metal oxide layer includes: providing an organic metal compound having a following general equation; and introducing oxidizing agent to an upper portion of the substrate to form a metal oxide on the substrate. The general equation is M(NR^1R^2)3R^3, where, M denotes metal, R^1 and R^2 are identical with or different from each other, and are alkyl group the number of hydrogen or carbons of which is one to five, R ^3 is alkyl group the number of carbons of which is one to five or aromatic cyclic compound or hetero cyclic compound the number of carbons of which is equal to or greater than four, and the cyclic compound does not have substituent or have methyl groups, ethyl groups, or t-butyl groups having the number of carbons as many as that in the cyclic compound.
Abstract translation: 提供了形成金属氧化物层的方法，以及制造栅极结构的方法和使用其的电容器，以形成通过原子层沉积而减少杂质的金属氧化物层。 形成金属氧化物层的方法包括：提供具有以下一般方程式的有机金属化合物; 并将氧化剂引入到所述基板的上部，以在所述基板上形成金属氧化物。 通式为M（NR ^ 1R ^ 2）3R ^ 3，其中M表示金属，R 1和R 2彼此相同或不同，为烷基，其中氢或碳的数目为 为1〜5，R 3为碳数为1〜5的烷基或碳数为4以上的芳香族环状化合物或杂环化合物，环状化合物不具有 具有与环状化合物相同的碳原子数的甲基，乙基或叔丁基。
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公开(公告)号：KR1020070117734A
公开(公告)日：2007-12-13
申请号：KR1020060051736
申请日：2006-06-09
Applicant: 삼성전자주식회사
IPC: H01L21/205 , H01L21/203 , H01L21/02
CPC classification number: C23C16/4482 , C23C16/45525 , H01L21/67017
Abstract: A chamber gas generating apparatus for semiconductor device fabricating equipment is provided to maximize equipment efficiency and productivity by increasing the evaporation quantity of an ALD(atomic layer deposition) source and a CVD(chemical vapor deposition) source without increasing a carrier gas flow rate. A canister includes a sidewall, a top and a bottom that form an inner space including an upper region and a lower region. An inlet port and an outlet port are connected to the upper region, penetrating the canister. A partition part covers at least part of the bottom of the canister to make the bubbling of the canister uniformly distributed in the canister, installed as a type of a circular shield layer(110) near to the bottom of the canister. The source of the bubbling is formed as a type of an ALD or CVD precursor.
Abstract translation: 提供了一种用于半导体器件制造设备的腔室气体发生设备，用于通过增加ALD（原子层沉积）源和CVD（化学气相沉积）源的蒸发量而不增加载气流量来最大化设备效率和生产率。 罐包括形成包括上部区域和下部区域的内部空间的侧壁，顶部和底部。 入口和出口连接到上部区域，穿透罐。 分隔部分覆盖罐的底部的至少一部分，以使罐的鼓泡均匀地分布在罐中，其安装为靠近罐的底部的圆形屏蔽层（110）的一种类型。 起泡源形成为ALD或CVD前体的一种。
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公开(公告)号：KR1020060085359A
公开(公告)日：2006-07-27
申请号：KR1020050006173
申请日：2005-01-24
Applicant: 삼성전자주식회사
IPC: H01L21/205 , H01L21/8242 , H01L21/82 , H01L21/336
CPC classification number: H01L21/02205 , C23C16/405 , C23C16/45553 , H01L21/02186 , H01L21/0228 , H01L21/28194 , H01L21/3141 , H01L21/31604 , H01L29/517 , H01L29/78
Abstract: A method of forming a thin film is provided. The method includes introducing an organometallic compound represented by the following formula onto a substrate; wherein M represents a metal in listed in Group 4A of the periodic table of elements, R1, R2 and R3 independently represent hydrogen or an alkyl group having a carbon number from 1 to 5, and X represents hydrogen or an alkyl group having a carbon number from 1 to 5 and then chemisorbing a portion of the organometallic compound on the substrate. The method further includes removing a non-chemisorbed portion of the organometallic compound from the substrate, providing an oxidizing agent onto the substrate and forming a thin film including a metal oxide on the substrate by chemically reacting the oxidizing agent with a metal in the organometallic compound and by separating ligands of the organometallic compound.
Abstract translation: 在该生产方法和原子层沉积方法的栅极结构，和使用其的电容器的制造方法中，原子层沉积的方法是（1）到所述衬底的所述有机金属化合物的一部分上部的引入与式的有机金属化合物的 并化学吸附在基材上。 然后，从衬底去除没有化学吸附在衬底上的有机金属化合物。 然后，通过引入氧化剂到有机金属化合物的吸附衬底的顶部以使该氧在有机金属化合物的上述金属元素的氧化剂与有机金属化合物的配体化学地分离。 结果，形成了含有金属氧化物的薄膜。
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公开(公告)号：KR100581993B1
公开(公告)日：2006-05-22
申请号：KR1020040042046
申请日：2004-06-09
Applicant: 삼성전자주식회사
IPC: H01L21/205
CPC classification number: H01L21/0228 , C23C16/40 , C23C16/45553 , H01L21/02164 , H01L21/02181 , H01L21/02186 , H01L21/02274 , H01L21/3141 , H01L21/31604 , H01L21/31608 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645
Abstract: 원자층 증착법을 이용한 물질 형성에서, 일반식 M[L1]x[L2]y (식중에서, M 은 금속을 나타내고, L1 및 L2는 할라이드계, 디케토네이트계, 알콕사이드계, 아미노계, 알콕시아민계, 아미디네이트계 또는 적어도 두 개이상의 전자 쌍주개가 가능한 멀티덴테이트 리간드이며, L1 및 L2는 서로 상이하고, x, y는 정수이고, x+y 은 3 내지 5의 정수이다)인 유기 금속 화합물을 기판 상에 화학 흡착시킨다. 이어서, 상기 기판의 상부에 산소 원자를 포함하는 반응물을 도입하여, 상기 유기 금속화합물의 금속 원소와 상기 반응물 내의 산소 원자를 화학적으로 반응시키고 상기 유기 금속 화합물의 리간드를 분리시켜 금속 산화물을 형성한다. 따라서, 고유전율을 가지면서 우수한 스텝커버러지 특성을 갖는 유전 물질을 형성할 수 있다.
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公开(公告)号：KR1020040076741A
公开(公告)日：2004-09-03
申请号：KR1020030012087
申请日：2003-02-26
Applicant: 삼성전자주식회사
IPC: H01L21/8242
Abstract: PURPOSE: A method for forming a capacitor using a SOG(Spin On Glass) composition is provided to reduce the number of processes and enhance the productivity by using an SOG layer instead of a BPSG layer. CONSTITUTION: A bottom oxide layer is formed on a semiconductor substrate(100) by using an SOG solution including polysilizane. A top oxide layer is formed on the bottom oxide layer. An opening part is formed by patterning the top oxide layer and the bottom oxide layer. A conductive layer for storage electrode is formed on a lateral part of the opening part, an exposed conductive structure, and the top oxide layer. The opening part is buried by using an insulating layer. A surface of the top oxide layer is exposed by planarizing the insulating layer. The insulating layer, the top oxide layer, and the bottom oxide layer are etched. An etch-stop layer(200), a dielectric layer(300), and a conductive layer(320) are formed thereon.
Abstract translation: 目的：提供使用SOG（旋转玻璃）组合物形成电容器的方法，以通过使用SOG层而不是BPSG层来减少工艺数量并提高生产率。 构成：通过使用包含聚硅烷的SOG溶液，在半导体衬底（100）上形成底部氧化物层。 在底部氧化物层上形成顶部氧化物层。 通过图案化顶部氧化物层和底部氧化物层形成开口部分。 用于存储电极的导电层形成在开口部分的侧面部分，暴露的导电结构和顶部氧化物层上。 通过使用绝缘层掩埋开口部。 通过平坦化绝缘层来暴露顶部氧化物层的表面。 蚀刻绝缘层，顶部氧化物层和底部氧化物层。 在其上形成蚀刻停止层（200），介电层（300）和导电层（320）。
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Patent Agency Ranking
公开(公告)号：KR1020080088222A
公开(公告)日：2008-10-02
申请号：KR1020070030874
申请日：2007-03-29
Applicant: 삼성전자주식회사
Inventor： 조준현
Abstract: An image forming apparatus, and an LSU and a polygon mirror thereof are provided to form the reflecting surfaces of the polygon mirror in an aspheric surface or a free-form surface, thereby converging deflected beam on the surface of a photoreceptor uniformly along a main scanning direction without an f-Theta lens. An image forming apparatus includes a photoreceptor(20), an LSU(Laser Scanning Unit), a developer, and a transfer unit. An electrostatic latent image is on the photoreceptor. The LSU includes a light source(110), a polygon mirror, and a motor(190). The light source generates beam according to an image signal. The polygon mirror has plural reflecting surfaces(141). The plural reflecting surfaces deflect the beam emitted from the light source in a main scanning direction. The polygon mirror is composed of an aspheric surface so as for the plural reflecting surfaces, corrects the aberration of the beam and converges the beam deflected in the main scanning direction on the photoreceptor uniformly. The motor rotates the polygon mirror. The developer attaches developer to the photoreceptor on which the electrostatic latent image forms a visible image. The transfer unit transfers the visible image formed on the photoreceptor to a print medium.
Abstract translation: 提供一种图像形成装置及其LSU及其多面反射镜，以在非球面或自由曲面中形成多面镜的反射面，从而沿着主扫描方向将偏转光束会聚在感光体的表面上 方向没有f-Theta镜头。 图像形成装置包括感光体（20），LSU（激光扫描单元），显影剂和转印单元。 静电潜像在感光体上。 LSU包括光源（110），多面镜和电动机（190）。 光源根据图像信号产生光束。 多面镜具有多个反射面（141）。 多个反射面在主扫描方向上偏转从光源发射的光束。 多面镜由非球面构成，因为多个反射面校正光束的像差，并使在主扫描方向上偏转的光束均匀地收敛在感光体上。 电机旋转多面镜。 显影剂将显影剂附着到静电潜像形成可见图像的感光体上。 转印单元将形成在感光体上的可视图像转印到打印介质上。
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公开(公告)号：KR100696858B1
公开(公告)日：2007-03-20
申请号：KR1020050087508
申请日：2005-09-21
Applicant: 삼성전자주식회사
IPC: H01L21/28
CPC classification number: H01L21/28556 , C07F5/069 , C23C16/18 , H01L21/32051 , H01L21/76876 , H01L21/76877
Abstract: An organic aluminium precursor and a method for forming a metal line using the same are provided to acquire an improved step coverage characteristic and enhanced electrical conductivity from an aluminium line. An organic aluminium precursor forms an aluminium line(140,150). The organic aluminium precursor contains aluminium as a main metal. The organic aluminium precursor further contains boro-hydride and tri-methylamine as ligand. An aluminium boro-hydride trimethylamine is used as the organic aluminium precursor. The aluminium boro-hydride trimethylamine is represented by a predetermined structural formula.
Abstract translation: 提供有机铝前体和使用其的金属线的形成方法，以获得改进的台阶覆盖特性并提高铝线的导电性。 有机铝前体形成铝线（140,150）。 有机铝前体含有铝作为主要金属。 有机铝前体还含有硼氢化物和三甲胺作为配体。 铝硼氢化铝三甲胺用作有机铝前体。 硼氢化铝三甲胺由预定的结构式表示。
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公开(公告)号：KR100657792B1
公开(公告)日：2006-12-14
申请号：KR1020050006173
申请日：2005-01-24
Applicant: 삼성전자주식회사
IPC: H01L21/205 , H01L21/8242 , H01L21/82 , H01L21/336
CPC classification number: H01L21/02205 , C23C16/405 , C23C16/45553 , H01L21/02186 , H01L21/0228 , H01L21/28194 , H01L21/3141 , H01L21/31604 , H01L29/517 , H01L29/78
Abstract: 원자층 적층 방법과 이를 이용한 커패시터의 제조 방법 및 게이트 구조물의 제조 방법에 있어서, 원자층 적층 방법은 하기의 화학식(1)을 갖는 유기금속 화합물을 기판의 상부로 도입하여 상기 유기금속 화합물의 일부를 상기 기판 상에 화학 흡착시킨다. 이어서, 상기 기판에 화학 흡착되지 않은 유기금속 화합물을 기판으로부터 제거한다. 이어서, 상기 유기금속 화합물이 흡착된 기판의 상부로 산화제를 도입하여 상기 유기금속 화합물의 금속 원소와 상기 산화제 내의 산소를 화학적으로 반응시키고, 상기 유기금속 화합물의 리간드를 분리시킨다. 그 결과 금속 산화물을 포함하는 박막이 형성된다.
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公开(公告)号：KR1020050116928A
公开(公告)日：2005-12-14
申请号：KR1020040042046
申请日：2004-06-09
Applicant: 삼성전자주식회사
IPC: H01L21/205
CPC classification number: H01L21/0228 , C23C16/40 , C23C16/45553 , H01L21/02164 , H01L21/02181 , H01L21/02186 , H01L21/02274 , H01L21/3141 , H01L21/31604 , H01L21/31608 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645
Abstract: In a method of forming a metal oxide, an organic metal compound represented by the following chemical formula is introduced into a chamber to chemisorb the organic metal compound onto a substrate, M[L1]x[L2]y where M represents a metal, L1 and L2 respectively represents a first and second ligands. In addition, x and y are independently integers and a value of (x+y) is 3 to 5. An oxygen-containing compound is introduced into the chamber to form the metal oxide. The metal oxide is formed by reacting an oxygen of the oxygen-containing compound with the metal, and separating the ligand from the metal. Thus, the metal oxide having a superior step coverage and a high dielectric constant may be formed using the organic metal compound by an atomic layer deposition process.
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公开(公告)号：KR1020150124160A
公开(公告)日：2015-11-05
申请号：KR1020140050630
申请日：2014-04-28
Applicant: 삼성전자주식회사
IPC: C09D183/04 , H01B3/46
Abstract: 다공성유전막형성용조성물의제조방법에서, 실리콘전구체의적어도 1 이상의말단기에화학식 1로표시되는기공생성물질을결합한다. 기공생성물질이결합된실리콘전구체들을축합반응시켜실리콘중합체를형성한다. 실리콘중합체및 용매를혼합한다. (상기화학식 1에서, p는 4 내지 80의정수이고, q는 2 내지 40의정수이며, r은 8 내지 160의정수이다.)
Abstract translation: 用于形成多孔电介质层的组合物的方法将由C_pH_qO_r呈现的孔形成材料与硅前体的至少一个末端基团连接。 通过与孔形成材料偶联的硅前体的缩合反应形成硅聚合物，并将硅聚合物和溶剂混合。 在C_pH_qO_r中：p是4到80的整数; q为2〜40的整数; r为8〜160的整数。
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