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公开(公告)号：KR1020080076447A
公开(公告)日：2008-08-20
申请号：KR1020070016375
申请日：2007-02-16
Applicant: 삼성전자주식회사
IPC: H01L29/786
CPC classification number: H01L29/66765 , H01L21/02271 , H01L21/0262 , H01L21/2053 , H01L29/4908 , H01L29/78603
Abstract: A method for manufacturing a thin film transistor substrate is provided to prevent on current of the thin film transistor formed through a lower temperature process from lowering by adjusting a mixing rate of gas to improve a gate insulation layer and a semiconductor layer. A method for manufacturing a thin film transistor substrate includes the steps of: forming a gate electrode(120) on a substrate(110); forming a gate insulation layer(130) on the substrate with the gate electrode by using gas containing H2 and SiH4 which are mixed at the rate of 18:1~22:1 and gas containing N2 and NH3 which are mixed at the rate of 8:1~12:1 at 200 °C~250 °C; forming a semiconductor layer(142) on the substrate with the gate insulation layer by using gas containing H2 and SiH4 which are mixed at the rate of 13:1~17:1 at 200 °C~250 °C; forming an ohmic contact layer(144) on the semiconductor layer at 200 °C~250 °C; forming source and drain electrodes(152,154) on the ohmic layer which are separated from each other, with having a channel forming region of the semiconductor layer.
Abstract translation: 提供一种制造薄膜晶体管基板的方法，以通过调节气体的混合速率以改善栅极绝缘层和半导体层来防止通过较低温度工艺形成的薄膜晶体管的导通电流降低。 制造薄膜晶体管基板的方法包括以下步骤：在基板（110）上形成栅电极（120）; 通过使用以18：1〜22：1的速度混合的含有H2和SiH4的气体和以N2的比例混合的N 2和NH 3的气体，在栅电极的基板上形成栅极绝缘层（130） ：200〜250℃1〜12：1; 通过使用含有H2和SiH4的气体在200℃〜250℃下以13：1〜17：1的比例混合，在栅极绝缘层上形成半导体层（142）; 在200℃〜250℃在半导体层上形成欧姆接触层（144）; 在所述欧姆层上形成具有所述半导体层的沟道形成区域的彼此分离的源极和漏极（152,154）。
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公开(公告)号：KR1020080054927A
公开(公告)日：2008-06-19
申请号：KR1020060127606
申请日：2006-12-14
Applicant: 삼성전자주식회사
IPC: H05B33/02
CPC classification number: H01L27/1285 , H01L27/1222 , H01L51/56
Abstract: A manufacturing method of an organic light emitting diode display is provided to improve Ion and Ioff characteristics of a thin film transistor through plasma treatment. A manufacturing method of an organic light emitting diode display includes the steps of: forming a gate line including a first control electrode(124a) and a second control electrode(124b) on a substrate; forming a gate insulating layer on the gate line and the second control electrode; forming an amorphous silicon layer on the gate insulating layer; forming a polycrystalline silicon layer by annealing the amorphous silicon layer; performing H2 plasma treatment on the polycrystalline silicon layer; forming first and second semiconductors(154a,154b) by patterning the polycrystalline silicon layer; forming a data line(171) having a first input electrode(173a), a driving voltage line(172) having a second input electrode(173b), and first and second output electrodes(175a,175b) on the first and second semiconductors; forming a passivation layer on the data line, the driving voltage line, and the first and second output electrodes; forming a connecting member(85) to connect the first output electrode and the second input electrode and a first electrode(191) connected to the second output electrode on the passivation layer; forming a partition including an opening on the first electrode; forming a light emitting member on the opening; and forming a second electrode on the light emitting member.
Abstract translation: 提供了一种有机发光二极管显示器的制造方法，以通过等离子体处理改善薄膜晶体管的离子和离子化特性。 有机发光二极管显示器的制造方法包括以下步骤：在基板上形成包括第一控制电极（124a）和第二控制电极（124b）的栅极线; 在栅极线和第二控制电极上形成栅极绝缘层; 在所述栅绝缘层上形成非晶硅层; 通过退火所述非晶硅层形成多晶硅层; 在多晶硅层上进行H2等离子体处理; 通过构图多晶硅层形成第一和第二半导体（154a，154b）; 形成具有第一输入电极（173a）的数据线（171），具有第二输入电极（173b）的驱动电压线（172）和第一和第二半导体上的第一和第二输出电极（175a，175b） 在数据线，驱动电压线以及第一和第二输出电极上形成钝化层; 形成用于连接第一输出电极和第二输入电极的连接部件（85）和与钝化层上的第二输出电极连接的第一电极（191）; 在所述第一电极上形成包括开口的隔板; 在所述开口上形成发光部件; 以及在所述发光部件上形成第二电极。
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公开(公告)号：KR1020080036281A
公开(公告)日：2008-04-28
申请号：KR1020060102707
申请日：2006-10-23
Applicant: 삼성전자주식회사
IPC: G02F1/136
CPC classification number: G02F1/1362 , G02F2001/133302 , H01L27/1214
Abstract: A method for manufacturing a TFT(Thin Film Transistor) substrate is provided to optimize plasma power or a gas type when performing the plasma processing of the channel area of a TFT in the manufacture of a TFT substrate using soda lime glass, thereby preventing the deterioration of the TFT and improving driving characteristics. A method for manufacturing a TFT substrate comprises the following steps of: forming gate wiring including a gate line(122) and a gate electrode(124) on a substrate(110); forming a gate insulating film(130) on the substrate on which the gate wiring is formed; forming data wiring including an active layer(140), a data line(152), a source electrode(154), and a drain electrode on the gate insulating layer; performing the plasma processing of the channel area of the active layer with a range of 500W to 1000W; forming a protection layer(170) at temperature below 250 degrees Celsius on the substrate on which the active layer and the data wiring are formed; and forming a pixel electrode(180) which is electrically connected to the drain electrode on the protection layer.
Abstract translation: 提供了一种用于制造TFT（薄膜晶体管）基板的方法，以在使用钠钙玻璃制造TFT基板时执行TFT的沟道区域的等离子体处理来优化等离子体功率或气体类型，从而防止劣化 并改善驱动特性。 一种制造TFT基板的方法包括以下步骤：在基板（110）上形成包括栅极线（122）和栅电极（124）的栅极布线; 在其上形成有栅极布线的基板上形成栅极绝缘膜（130）; 在所述栅极绝缘层上形成包括有源层（140），数据线（152），源电极（154）和漏电极的数据布线; 以500W〜1000W的范围进行有源层的沟道区域的等离子体处理; 在其上形成有源层和数据布线的基板上形成温度低于250摄氏度的保护层（170）; 以及形成与保护层上的漏电极电连接的像素电极（180）。
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公开(公告)号：KR1020070023251A
公开(公告)日：2007-02-28
申请号：KR1020050077608
申请日：2005-08-24
Applicant: 삼성전자주식회사
IPC: G02F1/136
CPC classification number: G02F1/136286 , G02F2001/136295 , H01L27/124 , H01L27/1262
Abstract: 불량을 감소시킬 수 있는 금속배선을 포함하는 표시 기판의 제조 방법이 개시된다. 절연 기판 위에 인듐산화물층/은(Ag)/인듐산화물층으로 적층된 게이트 금속패턴을 형성하고, N2 가스와 SiH4 가스를 이용하여 게이트 절연막을 증착한다. 게이트 절연막 위에 인듐산화물층/은(Ag)/인듐산화물층으로 적층된 소스 금속패턴을 형성하고, N2 가스와 SiH4 가스를 이용하여 보호막을 증착한다. N2가스와 SiH4가스를 사용하여 증착하므로, 인듐산화물의 환원이 억제되어 층분리가 유지된다. 따라서 인듐산화물층이 고온에서 은(Ag) 보호층 역할을 수행할 수 있으므로, 배선용 물질인 은(Ag)의 뭉침이 방지되어, 표시 기판의 배선 불량을 감소시킬 수 있다.
질소 가스, 게이트 절연막, 보호막, 인듐산화물, 저저항 금속-
公开(公告)号：KR1020080054583A
公开(公告)日：2008-06-18
申请号：KR1020060127002
申请日：2006-12-13
Applicant: 삼성전자주식회사
IPC: H01L29/786
CPC classification number: H01L29/66765 , H01L29/458 , H01L29/78669
Abstract: A method for manufacturing a thin film transistor array panel is provided to enhance reliability by improving stability and mobility of a thin film transistor. A gate line is formed on a substrate(110). A gate insulating layer is formed on the gate line. An amorphous silicon layer having a thickness of 1500-1800 angstrom is formed on the gate insulating layer. An impure amorphous silicon layer having a thickness of 300-500 angstrom is formed on the amorphous silicon layer. An intrinsic semiconductor and an impure semiconductor are formed by etching the amorphous silicon layer and the impure amorphous silicon layer. A data line and a drain electrode(175) are formed on the impure semiconductor. A pixel electrode(191) is connected to the drain electrode.
Abstract translation: 提供一种制造薄膜晶体管阵列面板的方法，通过提高薄膜晶体管的稳定性和迁移率来提高可靠性。 在基板（110）上形成栅极线。 在栅极线上形成栅极绝缘层。 在栅极绝缘层上形成厚度为1500-1800埃的非晶硅层。 在非晶硅层上形成厚度为300-500埃的不纯的非晶硅层。 通过蚀刻非晶硅层和不纯的非晶硅层来形成本征半导体和不纯的半导体。 在不纯的半导体上形成数据线和漏电极（175）。 像素电极（191）连接到漏电极。
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Patent Agency Ranking
公开(公告)号：KR1020080021215A
公开(公告)日：2008-03-07
申请号：KR1020060083076
申请日：2006-08-30
Applicant: 삼성전자주식회사
IPC: G02F1/1335
CPC classification number: G02F1/133509 , G02F1/1362 , G02F2001/133397
Abstract: A thin film transistor substrate and a method of manufacturing the thin film transistor substrate are provided to form a black matrix and a color filter pattern on the backside of a thin film transistor substrate to remove image sticking caused by ionic impurities according to the material of the color filter pattern and the black matrix and image sticking caused by light leakage current generated from an active layer. A thin film transistor substrate includes a plurality of gate lines, a plurality of data lines(62), a plurality of thin film transistors, a plurality of pixel electrodes(82), a black matrix(91), and red, green and blue color filters(92R,92G,92B). The gate lines are formed on one side of an insulating substrate and extended in a first direction. The data lines are extended in a second direction and intersect the gate lines. The thin film transistors are respectively connected to the gate lines and the data lines. The pixel electrodes are respectively connected to the thin film transistors. The black matrix is formed on the other side of the insulating substrate and superposed on the gate lines, the data lines and the thin film transistors. The color filters are formed on the other side of the insulating layer and superposed on the pixel electrodes.
Abstract translation: 提供薄膜晶体管基板和制造薄膜晶体管基板的方法，以在薄膜晶体管基板的背面上形成黑色矩阵和滤色器图案，以根据材料制造由离子杂质引起的图像残留 滤色器图案以及由活性层产生的漏光电流引起的黑色矩阵和图像残留。 薄膜晶体管基板包括多个栅极线，多个数据线（62），多个薄膜晶体管，多个像素电极（82），黑矩阵（91）以及红，绿和蓝 滤色片（92R，92G，92B）。 栅极线形成在绝缘基板的一侧并沿第一方向延伸。 数据线在第二方向上延伸并与栅极线相交。 薄膜晶体管分别连接到栅极线和数据线。 像素电极分别连接到薄膜晶体管。 黑矩阵形成在绝缘基板的另一侧，并叠加在栅极线，数据线和薄膜晶体管上。 滤色器形成在绝缘层的另一侧并且叠置在像素电极上。
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7.发明公开
公开(公告)号：KR1020070045770A
公开(公告)日：2007-05-02
申请号：KR1020050102429
申请日：2005-10-28
Applicant: 삼성전자주식회사
IPC: G02F1/136
CPC classification number: H01L29/78669 , H01L27/12 , H01L27/124 , H01L29/458 , H01L29/66765
Abstract: 전기적인 특성이 향상된 박막트랜지스터가 형성된 박막트랜지스터 기판 및 이의 제조방법과, 박막트랜지스터를 갖는 액정표시패널 및 전계발광 표시패널이 개시된다. 박막트랜지스터는 게이트전극, 액티브층, 소스전극, 드레인전극 및 버퍼층을 포함한다. 게이트전극은 기판 상에 형성된다. 액티브층은 게이트전극을 커버하도록 게이트전극의 상부에 형성된다. 소스전극 및 드레인전극은 액티브층의 상부에 소정의 간격으로 이격되어 형성된다. 버퍼층은 액티브층과 소스전극 사이 및 액티브층과 드레인전극 사이에 각각 형성되며, 두께에 따라 연속적으로 변동하는 함량비를 갖는 복수의 물질들로 이루어진다. 이와 같이, 소스전극과 드레인전극 및 액티브층 사이에 버퍼층이 형성됨에 따라, 산화에 의해 접촉저항이 증가하는 것을 방지함으로써, 박막트랜지스터의 전기적인 특성을 향상시킬 수 있다.
게이트전극, 소스전극, 드레인전극, 액티브층, 버퍼층-
公开(公告)号：KR1020090069806A
公开(公告)日：2009-07-01
申请号：KR1020070137605
申请日：2007-12-26
Applicant: 삼성전자주식회사
IPC: G02F1/136
CPC classification number: H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L27/1225
Abstract: A display substrate including a thin film transistor having with reliability, a display device including the same, a manufacturing method of the display substrate are provided to reduce power consumption by reducing voltage range necessary for driving a thin film transistor. A gate insulating layer(30) is formed on a gate electrode(26). An oxide semiconductor pattern is formed on the gate isolation layer. A source electrode is formed in the oxide semiconductor pattern image. A drain electrode is formed in the oxide semiconductor pattern image. The drain electrode is separated from the source electrode. The gate isolation layer, contacting the oxide semiconductor pattern, at least partial area is plasma processed. The partial domain of the oxide semiconductor pattern which is plasma processed is exposed by the source electrode and drain electrode.
Abstract translation: 提供具有可靠性的薄膜晶体管的显示基板，包括该薄膜晶体管的显示装置，提供显示基板的制造方法，以通过减小驱动薄膜晶体管所需的电压范围来降低功耗。 栅极绝缘层（30）形成在栅电极（26）上。 在栅极隔离层上形成氧化物半导体图形。 在氧化物半导体图案图像中形成源电极。 在氧化物半导体图案图像中形成漏电极。 漏电极与源电极分离。 接触氧化物半导体图案的至少部分区域的栅极隔离层是等离子体处理的。 等离子体处理的氧化物半导体图案的部分区域由源电极和漏电极露出。
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公开(公告)号：KR1020080074574A
公开(公告)日：2008-08-13
申请号：KR1020070013882
申请日：2007-02-09
Applicant: 삼성전자주식회사
IPC: H05B33/02 , H01L29/786
CPC classification number: H01L27/1222 , H01L27/3262 , H01L29/06
Abstract: A display device and a method for manufacturing the same are provided to maintain a display quality stably by using a poly silicon thin film transistor as a driving thin film transistor. A display device includes an insulation substrate(11), a switching thin film transistor(51), a driving thin film transistor(21), an insulation layer(41), a first electrode(71), an organic light emitting layer(90), and a second electrode(95). The switching thin film transistor is formed on the insulation substrate, receives a data voltage, and has a first semiconductor layer. The driving thin film transistor is formed on the insulation substrate. A control terminal is coupled to an output terminal of the switching thin film transistor. The driving thin film transistor has a second semiconductor layer having a poly-silicon and a halogen material. The insulation layer is formed on the switching thin film transistor and the driving thin film transistor. The first electrode is formed on the insulation layer and is electrically coupled to an output terminal of the driving thin film transistor. The organic light emitting layer is formed on the first electrode. The second electrode is formed on the organic light emitting layer.
Abstract translation: 提供了一种显示装置及其制造方法，以通过使用多晶硅薄膜晶体管作为驱动薄膜晶体管来稳定地保持显示质量。 显示装置包括绝缘基板（11），开关薄膜晶体管（51），驱动薄膜晶体管（21），绝缘层（41），第一电极（71），有机发光层 ）和第二电极（95）。 开关薄膜晶体管形成在绝缘基板上，接收数据电压，并具有第一半导体层。 驱动薄膜晶体管形成在绝缘基板上。 控制端子耦合到开关薄膜晶体管的输出端子。 驱动薄膜晶体管具有多晶硅和卤素材料的第二半导体层。 绝缘层形成在开关薄膜晶体管和驱动薄膜晶体管上。 第一电极形成在绝缘层上并且电耦合到驱动薄膜晶体管的输出端子。 有机发光层形成在第一电极上。 第二电极形成在有机发光层上。
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公开(公告)号：KR1020080070313A
公开(公告)日：2008-07-30
申请号：KR1020070008237
申请日：2007-01-26
Applicant: 삼성전자주식회사
IPC: H01L29/786
CPC classification number: H01L29/78696 , H01L21/2053 , H01L29/06 , H01L29/78618
Abstract: A display device and a manufacturing method of the same are provided to form first and second layers including polysilicon and a halogen material respectively and to form a channel region between source and drain electrodes so as to keep uniform quality of a thin film transistor. A display device comprises an insulating substrate, a semiconductor layer, a source electrode(240), a drain electrode(250), and a resist contact layer(230). The semiconductor layer includes a first layer(220a) including polysilicon and a halogen material of a first content, and a second layer(220b) including polysilicon and a halogen material of a second content which is lower than the first content. A part of the source electrode is on the semiconductor layer. A channel region(c) is formed between the source electrode and the drain electrode. The halogen material is fluorine.
Abstract translation: 提供显示装置及其制造方法以分别形成包括多晶硅和卤素材料的第一和第二层，并在源极和漏极之间形成沟道区域，以保持薄膜晶体管的均匀质量。 显示装置包括绝缘基板，半导体层，源电极（240），漏电极（250）和抗蚀剂接触层（230）。 半导体层包括包括多晶硅和第一含量的卤素材料的第一层（220a）和包含多晶硅的第二层（220b）和低于第一含量的第二含量的卤素材料。 源电极的一部分在半导体层上。 在源电极和漏电极之间形成沟道区（c）。 卤素材料是氟。
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