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公开(公告)号：KR1020120128224A
公开(公告)日：2012-11-27
申请号：KR1020110046036
申请日：2011-05-17
Applicant: 삼성전자주식회사
CPC classification number: H04N5/357 , H04N9/07 , H04N9/64 , H04N13/106
Abstract: PURPOSE: A driving method of a three-dimensional image sensor is provided to increase the color quality and image quality of a three-dimensional image sensor by correcting color pixel outputs based on the fog compensation coefficient. CONSTITUTION: A three-dimensional image sensor generates a first pixel array output by turning off a light source module(S310). The three-dimensional image sensor generates a second pixel array by turning on the light source module(S320). In case an average fog compensation coefficient is not stored in a fog compensation coefficient storage unit, an ISP(Image Signal Processing) unit calculates the average fog compensation coefficient about color pixels included in the pixel array(S330,S340). The ISP unit compensates color pixel output unit included in the second pixel array output(S360). [Reference numerals] (AA) Start; (BB,EE) Yes; (CC,DD) No; (FF) End; (S310) A three-dimensional image sensor generates a first pixel array output by turning off a light source module; (S320) The three-dimensional image sensor generates a second pixel array by turning on the light source module; (S330) In case an average fog compensation coefficient is stored?; (S340) An ISP(Image Signal Processing) unit calculates the average fog compensation coefficient about color pixels included in the pixel array; (S350) Average fog compensation coefficient is stored; (S360) The ISP unit compensates color pixel output unit included in the second pixel array output; (S370) Image sensor turn-off?
Abstract translation: 目的：提供三维图像传感器的驱动方法，以通过基于雾补偿系数校正彩色像素输出来增加三维图像传感器的颜色质量和图像质量。 构成：三维图像传感器通过关闭光源模块产生第一像素阵列输出（S310）。 三维图像传感器通过打开光源模块来产生第二像素阵列（S320）。 在灰雾补偿系数存储单元中不存储平均雾补偿系数的情况下，ISP（图像信号处理）单元计算出包括在像素阵列中的彩色像素的平均雾补偿系数（S330，S340）。 ISP单元补偿包括在第二像素阵列输出中的彩色像素输出单元（S360）。 （附图标记）（AA）开始; （BB，EE）是; （CC，DD）否; （FF）结束; （S310）三维图像传感器通过关闭光源模块来生成第一像素阵列输出; （S320）三维图像传感器通过打开光源模块来生成第二像素阵列; （S330）在存储平均雾补偿系数的情况下 （S340）ISP（图像信号处理）单元计算包括在像素阵列中的彩色像素的平均雾补偿系数; （S350）存储平均雾补偿系数; （S360）ISP单元补偿包括在第二像素阵列输出中的彩色像素输出单元; （S370）图像传感器关闭？
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公开(公告)号：KR101818587B1
公开(公告)日：2018-01-15
申请号：KR1020110004750
申请日：2011-01-18
Applicant: 삼성전자주식회사
IPC: H01L27/146
Abstract: 광감지장치의단위픽셀은, 반도체기판에형성되는플로팅확산영역, 상기플로팅확산영역을둘러싸도록상기반도체기판위에형성되는환형의콜렉트게이트, 상기콜렉트게이트를둘러싸도록상기반도체기판위에형성되는환형의드레인게이트, 및상기드레인게이트를둘러싸도록상기반도체기판에형성되는드레인영역을포함한다. 이러한환형구조를통하여광감도를향상시키고신호-대-노이즈비(SNR)를향상시킬수 있다.
Abstract translation: 光感测装置的单位像素包括形成在半导体衬底中的浮动扩散区域，形成在半导体衬底上以围绕浮动扩散区域的环形集电栅极，形成在半导体衬底上以围绕集电极栅极的环形漏极， 以及形成在半导体衬底中以围绕漏极栅极的漏极区域。 这种环形结构改善了光敏性并改善了信噪比（SNR）。
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公开(公告)号：KR1020100112878A
公开(公告)日：2010-10-20
申请号：KR1020090031396
申请日：2009-04-10
Applicant: 삼성전자주식회사
IPC: H01L27/146
CPC classification number: H01L31/112 , H01L27/14609 , H04N5/335 , H04N5/374
Abstract: PURPOSE: An image sensor with high sensitivity is provided to obtain a high conversion gain by functioning as a photoelectric conversion device and a sensing device through a single electron field effect transistor. CONSTITUTION: An n type well(210) is formed on a p type sub substrate. A source region(220) and a drain region(230) are formed on the n type well. A channel region(250) connects the source region to the drain region. A gate region(240) is formed on the lower side of the channel region. The n type well is an impurity region doped with lower density than the gate region.
Abstract translation: 目的：提供高灵敏度的图像传感器，通过用作光电转换装置和通过单电子场效应晶体管的感测装置来获得高转换增益。 构成：在p型副基板上形成n型阱（210）。 源极区（220）和漏极区（230）形成在n型阱上。 沟道区域（250）将源极区域连接到漏极区域。 栅极区域（240）形成在沟道区域的下侧。 n型阱是掺杂比栅极区更低密度的杂质区。
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公开(公告)号：KR1020130052986A
公开(公告)日：2013-05-23
申请号：KR1020110118393
申请日：2011-11-14
Applicant: 삼성전자주식회사
IPC: H04N5/335 , H01L27/146 , H04N13/00
CPC classification number: H01L27/14609 , H01L27/1461 , H01L31/103 , H01L31/105 , H01L31/1808 , Y02E10/50
Abstract: PURPOSE: A unit pixel of a three-dimensional image sensor and a three-dimensional image sensor including the same are provided to implement high quantum efficiency for light in an infrared area by including a non-silicon photosensitive element. CONSTITUTION: A non-silicon photosensitive element(100) is formed on a silicon substrate by using one or more non-silicon materials. A non-silicon photosensitive element generates a charge by reacting to receiving light. One or more reading circuits(200) are formed on the silicon substrate and outputs a sensing signal for generating depth information of a three-dimensional image based on the charge. A three-dimensional image sensor senses light in an infrared area at high efficiency as a unit pixel(10) includes the non-silicon photosensitive element.
Abstract translation: 目的：提供三维图像传感器的单位像素和包括该三维图像传感器的三维图像传感器，以通过包括非硅光敏元件在红外区域中实现高的光量子效率。 构成：通过使用一种或多种非硅材料在硅衬底上形成非硅光敏元件（100）。 非硅光敏元件通过反应接收光而产生电荷。 一个或多个读取电路（200）形成在硅衬底上，并输出用于基于电荷产生三维图像的深度信息的感测信号。 三维图像传感器以高效率感测红外区域中的光，因为单位像素（10）包括非硅光敏元件。
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Patent Agency Ranking
公开(公告)号：KR1020120105169A
公开(公告)日：2012-09-25
申请号：KR1020110022816
申请日：2011-03-15
Applicant: 삼성전자주식회사
CPC classification number: H04N13/271 , H04N13/254 , H04N13/00 , G06T15/00
Abstract: PURPOSE: An operation method for a three dimensional image sensor including a plurality of distance pixels is provided to maintain an S/N(Signal to Noise) ratio by grouping the distance pixels. CONSTITUTION: A light source module emits modulated light(S210). A three dimensional image sensor detects the modulated light using a plurality of distance pixels(S230). A DSP(Digital Signal Processor) unit groups the distance pixels as a plurality of pixel groups. The DSP unit creates a plurality of pixel group outputs corresponding to the pixel groups(S250). [Reference numerals] (AA) Start; (BB) End; (S210) Modulation light emission; (S230) Modulation light is detected using a plurality of distance pixels; (S250) A plurality of distance pixel outputs is created by grouping a plurality of pixels including a size which is determined by a distance
Abstract translation: 目的：提供一种包括多个距离像素的三维图像传感器的操作方法，以通过对距离像素进行分组来维持S / N（信噪比）。 构成：光源模块发射调制光（S210）。 三维图像传感器使用多个距离像素来检测调制光（S230）。 DSP（数字信号处理器）单元将距离像素分组为多个像素组。 DSP单元产生对应于像素组的多个像素组输出（S250）。 （附图标记）（AA）开始; （BB）结束; （S210）调制发光; （S230）使用多个距离像素来检测调制光; （S250）通过对包括由距离确定的尺寸的多个像素进行分组来创建多个距离像素输出
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公开(公告)号：KR101565750B1
公开(公告)日：2015-11-05
申请号：KR1020090031396
申请日：2009-04-10
Applicant: 삼성전자주식회사
IPC: H01L27/146
CPC classification number: H01L31/112 , H01L27/14609 , H04N5/335 , H04N5/374
Abstract: 고감도이미지센서가제공된다. 고감도이미지센서는제1 도전형의기판내에형성된단전자트랜지스터(Single Electron Field Effect Transistor; SEFET)를포함하는픽셀을포함하며, 상기단전자트랜지스터는, 상기기판내에형성된제2 도전형의제1 웰; 상기제1 웰내에소정간격이격되어형성된제1 도전형의소스영역및 드레인영역; 상기소스영역및 드레인영역사이의제1 웰내에형성된제2 도전형게이트영역을포함한다.
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公开(公告)号：KR1020110033567A
公开(公告)日：2011-03-31
申请号：KR1020090091113
申请日：2009-09-25
Applicant: 삼성전자주식회사
IPC: H01L27/146
CPC classification number: H04N5/3696 , H01L27/14621 , H01L27/14645 , H04N5/2257 , H04N5/332
Abstract: PURPOSE: An image sensor having a depth sensor is provided to increase the recombination of electrons and holes by forming a potential barrier to preventing the movement of electronics generated from the depth region in the lower part of a substrate. CONSTITUTION: In an image sensor having a depth sensor. A substrate(101) comprises a visible light recognition domain(I) and a non-visible light recognition domain(II). A first well(123a) and a second well(123b) of a first conductive type are formed in the non-visible light recognition domain. A first gate(122a) and a second gate(122b) apply voltage to the first well and the second well respectively. A photoelectric conversion element(110R,110G) is formed between the first gate and the second gate. The photoelectric conversion element comprises pinning layers(112R,112G) formed in the upper part of the substrate.
Abstract translation: 目的：提供具有深度传感器的图像传感器，以通过形成势垒来增加电子和空穴的复合，以防止从衬底下部的深度区域产生的电子元件的移动。 构成：在具有深度传感器的图像传感器中。 基板（101）包括可见光识别域（I）和不可见光识别域（II）。 第一导电类型的第一阱（123a）和第二阱（123b）形成在不可见光识别域中。 第一栅极（122a）和第二栅极（122b）分别向第一阱和第二阱施加电压。 光电转换元件（110R，110G）形成在第一栅极和第二栅极之间。 光电转换元件包括形成在基板上部的钉扎层（112R，112G）。
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公开(公告)号：KR101648353B1
公开(公告)日：2016-08-17
申请号：KR1020090091113
申请日：2009-09-25
Applicant: 삼성전자주식회사
IPC: H01L27/146
CPC classification number: H04N5/3696 , H01L27/14621 , H01L27/14645 , H04N5/2257 , H04N5/332
Abstract: 거리센서를포함하는이미지센서가제공된다. 상기이미지센서는가시광인식영역과비가시광인식영역을포함하는기판과, 비가시광인식영역에형성되는제1 도전형의제1 웰및 제2 웰과, 제1 웰및 제2 웰에각각전압을인가하는제1 게이트및 제2 게이트를포함하되, 제1 게이트및 제2 게이트에는서로위상이반대인전압이인가된다.
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公开(公告)号：KR1020120015257A
公开(公告)日：2012-02-21
申请号：KR1020110004750
申请日：2011-01-18
Applicant: 삼성전자주식회사
IPC: H01L27/146
CPC classification number: H01L27/14609 , H01L27/14603 , H01L27/14625
Abstract: PURPOSE: An apparatus for sensing a unit pixel and light and a method for measuring a distance using the same are provided to produce a high signal to noise ratio by using variable and empty signals according to a distance to a subject. CONSTITUTION: A floating diffusion area(110) is formed on a semiconductor substrate. A collect gate(120) is formed on the semiconductor substrate to surround the floating diffusion area. A drain gate(130) is formed on the semiconductor substrate to surround the collect gate. A drain region(140) is formed on the semiconductor substrate to surround the drain gate. A photo charge storing area(150) is doped with a conductive impurity which is opposite to the semiconductor substrate.
Abstract translation: 目的：提供用于感测单位像素和光的装置和使用其的距离测量方法，以通过使用根据到被摄体的距离的可变和空信号来产生高的信噪比。 构成：在半导体衬底上形成浮动扩散区（110）。 集电栅极（120）形成在半导体衬底上以包围浮动扩散区域。 漏极栅极（130）形成在半导体衬底上以围绕收集栅极。 漏极区（140）形成在半导体衬底上以围绕漏极栅极。 光电荷存储区域（150）掺杂有与半导体衬底相对的导电杂质。
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