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公开(公告)号：KR101486422B1
公开(公告)日：2015-01-27
申请号：KR1020080045521
申请日：2008-05-16
CPC classification number: H01S3/0632 , H01S3/0637 , H01S3/0933 , H01S3/09403 , H01S3/1608 , H01S3/1691
Abstract: 광증폭매체, 광증폭매체의 제조방법 및 광증폭매체를 포함하는 광학소자에 관해 개시되어 있다. 개시된 본 발명의 광증폭매체는 활성제(activator)가 도핑된 제1물질층, 및 감광제(sensitizer)를 포함하는 제2물질층이 적층된 다층구조물을 포함한다.
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公开(公告)号：KR1020090107254A
公开(公告)日：2009-10-13
申请号：KR1020080032660
申请日：2008-04-08
Applicant: 삼성전자주식회사
IPC: H04N5/369
CPC classification number: H01L27/14679 , H01L27/14609 , H04N5/335 , H04N5/3355
Abstract: PURPOSE: An image sensor using a binary photo signal and a method of operating the same are provided to output a binary signal about strength of light in one cell region. CONSTITUTION: An image sensor using a binary photo signal includes a micro lens and a floating body transistor(10). The micro lens includes unit pixels arranged in an array type. The unit pixel corresponds to a color filter. The floating body transistor is formed in a lower part of each color filter corresponding to each color filter. The floating body transistor includes a source area, a drain area, a floating body area and a gate electrode. The floating body area is positioned between the source area and the drain area. The gate electrode is formed on the floating body area.
Abstract translation: 目的：提供使用二进制光信号的图像传感器及其操作方法，以输出关于一个单元区域中的光强度的二进制信号。 构成：使用二进制光信号的图像传感器包括微透镜和浮体晶体管（10）。 微透镜包括排列成阵列型的单位像素。 单位像素对应于滤色器。 浮体晶体管形成在与每个滤色器对应的每个滤色器的下部中。 浮体晶体管包括源区，漏区，浮体区和栅电极。 浮体区域位于源区域和排水区域之间。 栅电极形成在浮体区域上。
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公开(公告)号：KR101543664B1
公开(公告)日：2015-08-12
申请号：KR1020080123762
申请日：2008-12-08
Applicant: 삼성전자주식회사
IPC: H01L27/14
CPC classification number: H01L27/14812 , H01L27/14609 , H01L27/14641 , H01L27/14643 , H04N5/37452
Abstract: 픽셀어레이및 이를포함하는입체영상센서가개시된다. 본발명의실시예에따른입체영상센서는, 종래의 MOS 구조대신에정션게이트구조를갖는픽셀구조를사용하기때문에광 이용효율이증대될수 있다. 또한, 생성된광전하가웰에저장되기때문에노이즈가크게감소될수 있다.
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公开(公告)号：KR1020100065434A
公开(公告)日：2010-06-17
申请号：KR1020080123762
申请日：2008-12-08
Applicant: 삼성전자주식회사
IPC: H01L27/14
CPC classification number: H01L27/14812 , H01L27/14609 , H01L27/14641 , H01L27/14643 , H04N5/37452
Abstract: PURPOSE: A pixel array and a three dimensional image sensor including the same are provided to store photo-charges in a well using a pixel unit which includes a junction gate structure. CONSTITUTION: A photo-charge storing area(10) is prepared. A gating area(20) is formed on one side of the photo-charge storing area. A photo-charge generating area(30) absorbs light in order to generate photo-charges and selectively provides the photo-charges to the photo-charge storing area in response to a voltage applied to the gating area. The photo-charge storing area and the photo-charge generating area are doped into a first type.
Abstract translation: 目的：提供像素阵列和包括其的三维图像传感器，以使用包括结门结构的像素单元将光电荷存储在阱中。 规定：准备光电储存区（10）。 门光区域（20）形成在光电荷存储区域的一侧。 光电荷产生区域（30）吸收光以产生光电荷，并且响应于施加到选通区域的电压而选择性地将光电荷提供给光电荷存储区域。 光电荷存储区域和光电荷产生区域被掺杂成第一类型。
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公开(公告)号：KR1020100011291A
公开(公告)日：2010-02-03
申请号：KR1020080072438
申请日：2008-07-24
Applicant: 삼성전자주식회사
IPC: H01L27/146
CPC classification number: H01L27/14643 , B82Y20/00 , B82Y30/00 , H01L27/14625
Abstract: PURPOSE: An image sensor having a light focusing structure is provided to focus in on a wide photoelectric conversion area by including a metal nano dot on a submicron sized floating body. CONSTITUTION: A plurality of pixel units are arranged in an array shape. A pixel unit comprises a first area(112) and a second area(114) in which materials having different polarities are doped. A photoelectric conversion region(116) is formed between the first area and the second area. At least one metal nano-dot(120) focuses incoming light on the photoelectric conversion region. The metal nano-dot is arranged on the semiconductor layer(110).
Abstract translation: 目的：提供具有光聚焦结构的图像传感器，通过在亚微米尺寸的浮体上包括金属纳米点来聚焦在宽的光电转换区域上。 构成：多个像素单元被布置成阵列形状。 像素单元包括其中掺杂有不同极性的材料的第一区域（112）和第二区域（114）。 在第一区域和第二区域之间形成光电转换区域（116）。 至少一个金属纳米点（120）将入射光聚焦在光电转换区域上。 金属纳米点布置在半导体层（110）上。
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Patent Agency Ranking
公开(公告)号：KR101648353B1
公开(公告)日：2016-08-17
申请号：KR1020090091113
申请日：2009-09-25
Applicant: 삼성전자주식회사
IPC: H01L27/146
CPC classification number: H04N5/3696 , H01L27/14621 , H01L27/14645 , H04N5/2257 , H04N5/332
Abstract: 거리센서를포함하는이미지센서가제공된다. 상기이미지센서는가시광인식영역과비가시광인식영역을포함하는기판과, 비가시광인식영역에형성되는제1 도전형의제1 웰및 제2 웰과, 제1 웰및 제2 웰에각각전압을인가하는제1 게이트및 제2 게이트를포함하되, 제1 게이트및 제2 게이트에는서로위상이반대인전압이인가된다.
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公开(公告)号：KR1020100062212A
公开(公告)日：2010-06-10
申请号：KR1020080120681
申请日：2008-12-01
Applicant: 삼성전자주식회사
IPC: H01L21/8242
CPC classification number: H01L29/7881 , G11C11/404 , G11C2211/4016 , H01L27/108 , H01L27/10802 , H01L29/7841
Abstract: PURPOSE: A semiconductor memory device is provided to increase the sensing margin of a 1T-DRAM regardless of the stored amount of a carrier in a body region. CONSTITUTION: An insulating region(720) is located on a substrate region(710). A body region(730) is located on the insulating region. The body region stores a carrier. A first dielectric region(750) is located on the body region. A first floating gate pattern(760) is located on the first dielectric region. A second dielectric region(770) is located on surface the first floating gate pattern. A control gate pattern(790) controls the amount of the carrier stored on the body region.
Abstract translation: 目的：提供一种半导体存储器件来增加1T-DRAM的感测裕度，而不管身体区域中载体的存储量如何。 构成：绝缘区域（720）位于衬底区域（710）上。 身体区域（730）位于绝缘区域上。 身体区域存储载体。 第一电介质区域（750）位于身体区域上。 第一浮栅图案（760）位于第一介电区域上。 第二介质区域（770）位于第一浮栅图案的表面上。 控制栅极图案（790）控制存储在身体区域上的载体的量。
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公开(公告)号：KR1020090132872A
公开(公告)日：2009-12-31
申请号：KR1020080059057
申请日：2008-06-23
Applicant: 삼성전자주식회사
IPC: H01L21/8242 , H01L21/336
CPC classification number: H01L29/7841 , H01L21/84 , H01L27/108 , H01L27/10802 , H01L27/10844 , H01L27/1203
Abstract: PURPOSE: A semiconductor device and a semiconductor substrate are provided to suppress BTBT(Band-To-Band Tunneling) by increasing the distance between first and second impurity-doped regions. CONSTITUTION: A gate pattern(330) is formed on a semiconductor substrate(310). A body region(370) is located on the gate pattern. First and second impurity-doped regions(340,350) are positioned on the body region. A cutoff insulation region(380) is positioned between the first and second impurity-doped regions. A BOX(Buried Oxide) insulation region(315) is positioned between the semiconductor substrate and the gate pattern. A gate insulation region(360) is positioned between the gate pattern and the body region.
Abstract translation: 目的：提供半导体器件和半导体衬底，以通过增加第一和第二杂质掺杂区域之间的距离来抑制BTBT（带对带隧穿）。 构成：在半导体衬底（310）上形成栅极图案（330）。 身体区域（370）位于门图案上。 第一和第二杂质掺杂区域（340,350）被定位在身体区域上。 截止绝缘区域（380）位于第一和第二杂质掺杂区域之间。 BOX（埋埋氧化物）绝缘区域（315）位于半导体衬底和栅极图案之间。 栅极绝缘区域（360）位于栅极图案和身体区域之间。
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公开(公告)号：KR1020090118795A
公开(公告)日：2009-11-18
申请号：KR1020080066224
申请日：2008-07-08
Applicant: 삼성전자주식회사
IPC: H01L27/146
CPC classification number: H01L27/14612 , G01B11/14 , H01L27/1461 , H01L27/14645
Abstract: PURPOSE: A distance measuring sensor and a three dimensional color image sensor including the same are provided to improve light sensing sensitivity by including a dual transfer gate formed on a substrate and a photoelectric conversion region. CONSTITUTION: A distance measuring sensor(100) includes a dual transfer gate. The dual transfer gate(141,142) includes a first charge storage region, a second charge storage region, a photoelectric conversion region, a first transfer gate, and a second transfer gate. The first charge storage region and the second charge storage region are separated from a substrate(110) doped by a first dopant, and are doped with a second dopant. The second dopant is doped between the first charge storage region and the second charge storage region. The photoelectric conversion region(130) receives a light, and generates a photo charge. The first transfer gate and the second transfer gate are formed between the photoelectric conversion region and the charge storage regions(121,122), and selectively transfer the photo-charge of the photoelectric conversion region to the first charge storage region and the second charge storage region.
Abstract translation: 目的：提供一种距离测量传感器和包括该距离测量传感器的三维彩色图像传感器，以通过包括形成在基板和光电转换区域上的双传输栅极来提高光感测灵敏度。 构成：距离测量传感器（100）包括双传输门。 双传输栅极（141,142）包括第一电荷存储区域，第二电荷存储区域，光电转换区域，第一传输门极和第二传输门极。 第一电荷存储区域和第二电荷存储区域与由第一掺杂剂掺杂的衬底（110）分离，并掺杂有第二掺杂剂。 第二掺杂剂掺杂在第一电荷存储区域和第二电荷存储区域之间。 光电转换区域130接收光，产生光电荷。 第一传输栅极和第二传输栅极形成在光电转换区域和电荷存储区域（121,122）之间，并且选择性地将光电转换区域的光电荷转移到第一电荷存储区域和第二电荷存储区域。
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公开(公告)号：KR101565750B1
公开(公告)日：2015-11-05
申请号：KR1020090031396
申请日：2009-04-10
Applicant: 삼성전자주식회사
IPC: H01L27/146
CPC classification number: H01L31/112 , H01L27/14609 , H04N5/335 , H04N5/374
Abstract: 고감도이미지센서가제공된다. 고감도이미지센서는제1 도전형의기판내에형성된단전자트랜지스터(Single Electron Field Effect Transistor; SEFET)를포함하는픽셀을포함하며, 상기단전자트랜지스터는, 상기기판내에형성된제2 도전형의제1 웰; 상기제1 웰내에소정간격이격되어형성된제1 도전형의소스영역및 드레인영역; 상기소스영역및 드레인영역사이의제1 웰내에형성된제2 도전형게이트영역을포함한다.
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