公开(公告)号：KR1020000013511A

公开(公告)日：2000-03-06

申请号：KR1019980032402

申请日：1998-08-10

Applicant: 삼성전자주식회사

Inventor： 박병섭 ,  이영주 ,  한충근 ,  김영환

IPC: H01L21/02

Abstract: PURPOSE: When a main and sub control sections regulated by the subject section in the semiconductor device manufacturing equipment stop working because of defects, the continuation of a suspension causes the damage of a wafer during the procedure. So a user has to monitor the state of a subject section continuously and reset the power of the subject section in case defects are discovered. CONSTITUTION: A display device like a luminous diode (101) is set up connected to a main control section (100) for detecting defects. And a protecting device (200) is set up with a power cut-off element (202) which comprises of a detecting element(201) and a relay(202r) operating according to detected values and with a warning generating element(203) notifying the user of the defects. When the output of the luminous diode(101) connected to the subject section(100) is suspended, the power of the subject section(100) is reset automatically and the users are warned. So the damage of a wafer due to the continuation of a suspension is prevented in case that the subject section(100) is out of order.

Abstract translation: 目的：当半导体器件制造设备中由主体部分调节的主控和副控制部分由于缺陷而停止工作时，继续悬架会导致晶片在过程中的损坏。 因此，用户必须连续地监视被摄体部分的状态，并且在发现缺陷的情况下重置主体部分的电源。 构成：像发光二极管（101）的显示装置被设置为连接到用于检测缺陷的主控制部分（100）。 并且保护装置（200）设置有断电元件（202），该断电元件包括​​根据检测值操作的检测元件（201）和继电器（202r），并且具有警告发生元件（203）通知 用户的缺陷。 当连接到被摄体部分（100）的发光二极管（101）的输出被暂停时，被摄体部分（100）的电力被自动复位，并且警告用户。 因此，在主体部分（100）出现故障的情况下，防止由于继续悬架导致的晶片损坏。

公开(公告)号：KR1020030031252A

公开(公告)日：2003-04-21

申请号：KR1020010063049

申请日：2001-10-12

Applicant: 삼성전자주식회사

Inventor： 한충근 ,  신연경 ,  백운찬 ,  전춘병

IPC: H01L21/205

Abstract: PURPOSE: A vertical type tube furnace system for manufacturing a semiconductor device is provided to prevent leaning of a boat toward the sidewall of an inner tube caused by unbalance of a base when a base is connected to a tube by using a buffer part between a horizontal axis part and rotational axis part. CONSTITUTION: A vertical type tube furnace consists of a tube, a boat, a boat moving unit and a base. Wafers are inserted into the boat, which is moved into the tube by the boat moving unit. The base includes a horizontal axis part(310) and a rotational axis part(350). The base and connection axis part of the boat moving unit are connected at the horizontal axis part. A buffer part(750) is introduced between the rotational and horizontal axis part to prevent the force caused by the unbalance of horizontal axis part from transferring into the rotational axis part, which supports the base.

Abstract translation: 目的：提供一种用于制造半导体器件的垂直型管式炉系统，以防止当基座通过使用在水平面之间的缓冲部分连接到管时由于基座的不平衡而引起的船的侧壁倾斜 轴部和旋转轴部。 构成：垂直式管式炉由管，船，船移动单元和基座组成。 晶片被插入到船中，船由船移动单元移动到管中。 基座包括水平轴部（310）和旋转轴部（350）。 船移动单元的基座和连接轴部分在水平轴部分连接。 在旋转轴和水平轴部之间引入缓冲部（750），以防止由水平轴部的不平衡引起的力传递到支撑基座的旋转轴部。

公开(公告)号：KR1020080020753A

公开(公告)日：2008-03-06

申请号：KR1020060083995

申请日：2006-09-01

Applicant: 삼성전자주식회사

Inventor： 강남욱 ,  권흥안 ,  한충근

IPC: H01L21/3065 ,  H01L21/02

CPC classification number: H01J37/32862

Abstract: A method for preventing contamination of a process gas injection nozzle is provided to prevent particles from being formed in a process gas supply nozzle by continuously flowing purge gas like N2 gas and NF3 gas toward a process gas supply nozzle while the supply of process gas through the process gas supply nozzle stops. A semiconductor substrate having a silicon oxide layer is introduced into a process chamber of etch equipment(S300). Process gas for removing the silicon oxide layer is injected into the process chamber through the process gas supply nozzle(S302). Purge gas is firstly flowed through the process gas supply nozzle(S304). While the purge gas reacts with the silicon oxide layer to form reaction products, purge gas is secondly flowed through the process gas supply nozzle(S306). While the semiconductor substrate is heated, purge gas is thirdly flowed through the process gas supply nozzle(S308). The first, second and third flow processes for flowing the purge gas through the process gas supply nozzle can be performed continuously.

Abstract translation: 提供一种防止工艺气体注入喷嘴的污染的方法，以防止在工艺气体供给喷嘴中通过连续地将吹扫气体像N 2气体和NF 3气体一样流向工艺气体供给喷嘴，同时通过 工艺气体供应喷嘴停止。 将具有氧化硅层的半导体衬底引入蚀刻设备的处理室（S300）。 用于除去氧化硅层的工艺气体通过工艺气体供给喷嘴注入工艺室（S302）。 吹扫气体首先流过工艺气体供应喷嘴（S304）。 当吹扫气体与氧化硅层反应形成反应产物时，吹扫气体二次流过工艺气体供应喷嘴（S306）。 当半导体衬底被加热时，净化气体第三次流过工艺气体供应喷嘴（S308）。 用于使净化气体流过工艺气体供应喷嘴的第一，第二和第三流动过程可以连续进行。

公开(公告)号：KR100780864B1

公开(公告)日：2007-11-29

申请号：KR1020060047226

申请日：2006-05-25

Applicant: 삼성전자주식회사

Inventor： 진은옥 ,  이상곤 ,  김호왕 ,  남태영 ,  한충근

IPC: H01L21/02 ,  H01L21/304

CPC classification number: G05D9/12 ,  G01F23/296 ,  G01F23/2961 ,  G01F23/2968

Abstract: A chemical supply apparatus, an apparatus for manufacturing a semiconductor device, and a method for supplying chemicals are provided to reduce process errors by monitoring the remaining amount of chemical. A tank(100) is filled with a liquefied chemical(103). The tank includes a liquefied chemical outflow tube. A first sensor is formed to sense a level of the liquefied chemical by applying a predetermined signal to a surface of the liquefied chemical. A plurality of probes(131,132) include gaps to receive the liquefied chemical. A second sensor is formed in the gaps in order to sense the presence of the liquefied chemical and to sense the level of the liquefied chemical. The first sensor is formed with an ultrasonic sensor which is positioned at a bottom surface of the tank in order to sense the level of the liquefied chemical by applying the signal to the surface of the liquefied chemical and detecting the signal reflected from the liquefied chemical.

Abstract translation: 提供一种化学品供应装置，用于制造半导体装置的装置以及用于提供化学品的方法，以通过监测化学品的剩余量来减少工艺误差。 罐（100）中充满液化化学物（103）。 该罐包括液化的化学品流出管。 第一传感器被形成为通过向液化化学品的表面施加预定信号来感测液化化学品的水平。 多个探针（131,132）包括用于接收液化化学品的间隙。 在间隙中形成第二传感器，以便感测液化化学品的存在并感测液化化学品的含量。 第一传感器形成有超声波传感器，其位于罐的底表面处，以通过将信号施加到液化化学品的表面并检测从液化化学品反射的信号来感测液化化学品的水平。

公开(公告)号：KR1020090044285A

公开(公告)日：2009-05-07

申请号：KR1020070110316

申请日：2007-10-31

Applicant: 삼성전자주식회사

Inventor： 남태영 ,  김태호 ,  안중일 ,  이윤진 ,  이상곤 ,  한충근 ,  안병호

IPC: H01L21/20 ,  H01L21/304

CPC classification number: C23C16/4402 ,  B08B9/00 ,  C23C16/448

Abstract: 본 발명은 ALD 설비 및 그 ALD 설비의 세정방법에 관한 것이다.
본 발명의 ALD 설비의 세정방법은 솔벤트를 기화기 내부로 투입하는 단계; 솔벤트를 상기 기화기의 내부에 함침하고, 상기 기화기의 세정온도를 일정하게 유지하여 상기 기화기를 세정하는 단계; 및 상기 기화기의 세정 후 남은 오염액을 제거하는 단계를 포함한다.
ALD 공정과 같은 박막 증착 공정에서는, 반응 챔버에 소스를 공급하기 위하여 케미컬을 기화시키는 기화기 및 그 주변장치가 가동되는바, 본 발명에서는 박막 증착 공정 이후 세정 공정을 수행하여, 액상의 소스를 기상으로 상 변환 시킬 때 기화기 및 그 주변장치에서 발생하는 파티클, 파우더(Powder) 및 클로깅(Clogging)을 제거함으로써, 반도체 양산 안정화를 도모하고, 박막 증착 공정 설비의 가동율을 효과적으로 개선할 수 있다.
함침, 세정, 기화기

公开(公告)号：KR1020080042977A

公开(公告)日：2008-05-16

申请号：KR1020060111379

申请日：2006-11-13

Applicant: 삼성전자주식회사

Inventor： 윤수한 ,  한충근 ,  김정남

IPC: H01L21/304

Abstract: A semiconductor device manufacturing apparatus is provided to suppress generation of aluminum particles by forming an injection unit with ceramic. A process chamber(100) provides a space in which a plurality of substrates are processed. An injection unit(116,128) is installed in the inside of the process chamber. The injection unit is composed of ceramics. The injection unit inject a reactant including fluorine onto the substrates. The process chamber includes a boat(106) and a tube. The boat includes rods(104). A plurality of slots are formed at the rods in order to support the substrates of multiple stages. The tube is formed to surround the boat. The tube includes an opening lower part.

Abstract translation: 提供半导体器件制造装置，通过用陶瓷形成注射单元来抑制铝颗粒的产生。 处理室（100）提供处理多个基板的空间。 注射单元（116,128）安装在处理室的内部。 注射单元由陶瓷组成。 注射单元将包含氟的反应物注入到基底上。 处理室包括船（106）和管。 船包括杆（104）。 在杆处形成多个槽，以便支撑多级的衬底。 管形成为围绕船。 管包括开口下部。