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公开(公告)号:KR1020140004855A
公开(公告)日:2014-01-14
申请号:KR1020120072047
申请日:2012-07-03
Applicant: 서울대학교산학협력단
IPC: H01L27/108 , H01L21/8242
Abstract: A capacitance device according to an embodiment includes a substrate; a first dielectric layer placed on the substrate and having positive capacitance; a second dielectric layer placed on the top of the first dielectric layer or between the substrate; and the first dielectric layer having negative capacitance in order to make the whole capacitor of the capacitor device larger than the capacitance of each dielectric layer. The negative capacitance indicates a ferroelectric layer and a composite mixed with a ferroelectric material in order to stabilize the negative capacitance of the ferroelectric layer in an operation temperature area.
Abstract translation: 根据实施例的电容器件包括衬底; 放置在基板上并具有正电容的第一电介质层; 放置在第一介电层的顶部或衬底之间的第二电介质层; 并且具有负电容的第一介电层,以使电容器器件的整个电容器大于每个电介质层的电容。 负电容表示强电介质层和与铁电体材料混合的复合体,以稳定铁电体层的工作温度区域的负电容。
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公开(公告)号:KR102034381B1
公开(公告)日:2019-10-18
申请号:KR1020180051740
申请日:2018-05-04
Applicant: 고려대학교 산학협력단 , 서울대학교산학협력단
IPC: G01N33/543 , G01N33/553 , G01N33/58 , G01N33/569
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