公开(公告)号：KR1020110008416A

公开(公告)日：2011-01-27

申请号：KR1020090065767

申请日：2009-07-20

Applicant: 서울대학교산학협력단

Inventor： 윤도영 ,  김기범

IPC: G03F7/039

CPC classification number: G03F7/0757 ,  G03F7/2059 ,  G03F7/0007 ,  G03F7/0045 ,  G03F7/038 ,  G03F7/0382 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/091

Abstract: PURPOSE: A resist for electron beam lithography is provided to ensure high resolution and sensitivity and implement a line pattern having 20nm or less of line width. CONSTITUTION: A resist for electron beam lithography contains a polymer in which compounds of chemical formulas 1, 2, and 3 are copolymerized. In chemical formula, R1-R6 are selected from hydrogen and alkyl group of C1-5; X1 is hydrogen, hydroxy group, alkyl group of C1-5, alkoxy group of C1-5, haloalkyl phenyl of C7-12, haloalkyl phenyl alkyl group of C8-18; and X2 is selected from norbornyl group norbornyl alkyl group of C8-13, and norbornenyl group.

Abstract translation: 目的：提供用于电子束光刻的抗蚀剂以确保高分辨率和灵敏度，并实现具有20nm或更小线宽的线图案。 构成：用于电子束光刻的抗蚀剂含有其中化学式1,2和3的化合物共聚的聚合物。 在化学式中，R 1 -R 6选自氢和C 1-5的烷基; X1为氢，羟基，C1-5烷基，C1-5烷氧基，C7-12卤代烷基苯基，C8-18卤代烷基苯基烷基; X2选自C8-13的降冰片基降冰片基烷基和降冰片烯基。

公开(公告)号：KR101036803B1

公开(公告)日：2011-05-25

申请号：KR1020090065767

申请日：2009-07-20

Applicant: 서울대학교산학협력단

Inventor： 윤도영 ,  김기범

IPC: G03F7/039

CPC classification number: G03F7/0757 ,  G03F7/2059

Abstract: 본 발명은 전자빔에 대한 감도와 해상도가 우수한 전자빔 리소그라피용 레지스트 및 이 전자빔 리소그라피용 레지스트를 현상하는 방법에 관한 것이다. 본 발명에 따른 전자빔 리소그라피용 레지스트는 화학식 1의 화합물, 화학식 2의 화합물 및 화학식 3의 화합물이 공중합되어 형성되는 수평균 분자량이 500 내지 30,000인 공중합체를 포함한다.


리소그라피, 네가티브, 레지스트, 공중합

公开(公告)号：KR100933617B1

公开(公告)日：2009-12-23

申请号：KR1020080012876

申请日：2008-02-13

Applicant: 서울대학교산학협력단 ,  삼성전기주식회사

Inventor： 장지영 ,  임호 ,  윤도영

IPC: C07F9/6564 ,  C07F9/02

Abstract: A hardening cyclic phosphagen series compound is provided to produce polymer insulated material having excellent thermal stabililty. A hardening cyclic phosphagen series compound has a structure of the chemical formula (1): N3P3(R^1)x(R^2)y. A method for manufacturing the hardening cyclic phosphagen series compound comprises: a step of reacting R1-OH of the chemical formula III with a cyclotriphosphazene under the presence of NaH; a step of isolating hardening phosphazene; and a step of polymerizing the hardening phosphazene to crosslink. The phosphazene series polymer is obtained by simply heating, heating with AIBN (Azobisisobutyronitrile) or photopolymerizing with DMPA (2,2-dimethoxy- 2-phenyl acetophe-none).

Abstract translation: 提供一种硬化环磷腈系列化合物以生产具有优良热稳定性的聚合物绝缘材料。 固化环磷酸酯系列化合物具有化学式（1）的结构：N3P3（R ^ 1）x（R ^ 2）y。 用于制造固化环磷酸酯系列化合物的方法包括：在NaH存在下使化学式III的R 1 -OH与环三磷腈反应的步骤; 分离硬化磷腈的步骤; 以及聚合硬化磷腈以进行交联的步骤。 磷腈系列聚合物通过简单地加热，用AIBN（偶氮二异丁腈）加热或用DMPA（2,2-二甲氧基-2-苯基丙酮 - 无）光聚合而获得。

公开(公告)号：KR1020090087561A

公开(公告)日：2009-08-18

申请号：KR1020080012876

申请日：2008-02-13

Applicant: 서울대학교산학협력단 ,  삼성전기주식회사

Inventor： 장지영 ,  임호 ,  윤도영

IPC: C07F9/6564 ,  C07F9/02

CPC classification number: C07F9/65815

Abstract: A hardening cyclic phosphagen series compound is provided to produce polymer insulated material having excellent thermal stabililty. A hardening cyclic phosphagen series compound has a structure of the chemical formula (1): N3P3(R^1)x(R^2)y. A method for manufacturing the hardening cyclic phosphagen series compound comprises: a step of reacting R1-OH of the chemical formula III with a cyclotriphosphazene under the presence of NaH; a step of isolating hardening phosphazene; and a step of polymerizing the hardening phosphazene to crosslink. The phosphazene series polymer is obtained by simply heating, heating with AIBN (Azobisisobutyronitrile) or photopolymerizing with DMPA (2,2-dimethoxy- 2-phenyl acetophe-none).

Abstract translation: 提供硬化的环状磷酸酯系化合物以制备具有优异的热稳定性的聚合物绝缘材料。 硬化环状磷酸酯系化合物具有化学式（1）的结构：N 3 P 3（R 1）x（R 2））y。 制备硬化环状磷酸酯系化合物的方法包括：使化学式III的R 1 -OH与环三磷腈在NaH存在下反应的步骤; 分离硬化磷腈的步骤; 以及将硬化磷腈聚合以交联的步骤。 通过简单加热，用AIBN（偶氮二异丁腈）加热或用DMPA（2,2-二甲氧基-2-苯基乙酸酯）无光聚合，得到磷腈系聚合物。

公开(公告)号：KR1020110085480A

公开(公告)日：2011-07-27

申请号：KR1020100005293

申请日：2010-01-20

Applicant: 서울대학교산학협력단

Inventor： 이창희 ,  이현구 ,  곽정훈 ,  윤도영 ,  박인선

IPC: H01L51/54

CPC classification number: H01L51/5072 ,  H01L51/5088 ,  H01L51/5234 ,  H01L2251/303

Abstract: PURPOSE: An organic light emitting diode and a manufacturing method thereof are provided to implant an inorganic nano particle between a first electrode and an electron transporting layer, thereby lowering the driving voltage of a device. CONSTITUTION: An inverted organic light emitting diode is made of a substrate, a cathode, an electron implanting or electron transporting layer(13), a light emitting layer(14), a hole transporting or hole implanting layer(16), and an anode. The electron implanting or electron transporting layer is made of inorganic nano particles. The cathode is made of thin metal films. The hole transporting or hole implanting layer is made or an organic layer, a material in which p type material is doped in an organic layer, or inorganic nano particles. The anode is made of metal whose diameter is longer than 60nm.

Abstract translation: 目的：提供一种有机发光二极管及其制造方法，用于在第一电极和电子传输层之间注入无机纳米颗粒，从而降低器件的驱动电压。 构造：倒置的有机发光二极管由衬底，阴极，电子注入或电子传输层（13），发光层（14），空穴传输或空穴注入层（16）和阳极 。 电子注入或电子传输层由无机纳米颗粒制成。 阴极由薄金属薄膜制成。 制造空穴输送层或空穴注入层或有机层，其中p型材料掺杂在有机层中的材料或无机纳米颗粒。 阳极由直径大于60nm的金属制成。