Abstract:
본발명은자가유래 APC를이용한조절 T 세포의생체외증식방법및 이의용도에관한것으로, 보다상세하게는 (a) 영장류 CD4Treg 및 CD4PBMC를각각준비하는단계; 및 (b) 상기 CD4Treg를상기 CD4PBMC, 항-CD3 항체, 항-CD28 항체, IL2(interleukin2) 및 TGF-b(beta)로자극하여 CD4Treg를증식시키는단계;를포함하는 CD4면역조절 T 세포(Regulatory T Cell, Treg)의생체외증식방법, 장기이식거부반응억제용조성물및 자가면역질환또는염증성질환의예방또는치료용약학적조성물을제공한다. 본발명의방법은조절 T 세포를대량증식시키고상기증폭된조절 T 세포는탁월한면역억제효과를나타내므로, 동종또는이종간의장기의이식시 수용체(recipient)에서발생하는다양한면역거부반응을극복하는데 효과적으로이용될수 있다.
Abstract:
광전극은 전극 및 상기 전극 상에 형성되고 표면에 음이온이 흡착된 산화물 반도체 입자를 포함한다. 흡착된 음이온은 산화물 반도체 입자 내의 전자가 반도체와 전해질 계면을 통하여 손실되는 것을 방지한다. 따라서 광전극의 효율을 향상시킬 수 있다. 산 처리, 반도체, 광전극, 태양전지
Abstract:
PURPOSE: A photo-electrode and a method for forming the same are provided to prevent the loss of electrons in an oxide semiconductor particle through the interface between a semiconductor and electrolyte. CONSTITUTION: An electrode(20) is formed on a glass substrate(10). An oxide semiconductor layer is formed on the electrode. The oxide semiconductor layer includes an oxide semiconductor particle on which a negative ion(60) is absorbed. A photo-resist material(30) is absorbed on the surface of the oxide semiconductor particle. An acid treatment is performed to the electrode.
Abstract:
본발명은자가유래 APC를이용한조절 T 세포의생체외증식방법및 이의용도에관한것으로, 보다상세하게는 (a) 영장류 CD4Treg 및 CD4PBMC를각각준비하는단계; 및 (b) 상기 CD4Treg를상기 CD4PBMC, 항-CD3 항체, 항-CD28 항체, IL2(interleukin2) 및 TGF-b(beta)로자극하여 CD4Treg를증식시키는단계;를포함하는 CD4면역조절 T 세포(Regulatory T Cell, Treg)의생체외증식방법, 장기이식거부반응억제용조성물및 자가면역질환또는염증성질환의예방또는치료용약학적조성물을제공한다. 본발명의방법은조절 T 세포를대량증식시키고상기증폭된조절 T 세포는탁월한면역억제효과를나타내므로, 동종또는이종간의장기의이식시 수용체(recipient)에서발생하는다양한면역거부반응을극복하는데 효과적으로이용될수 있다.
Abstract:
PURPOSE: A photo-catalyst for water decomposition and a method for manufacturing the same are provided to decompose pure water and to generate hydrogen by generating electrons and holes from photo-catalysts under light irradiation. CONSTITUTION: A photo-catalyst for water decomposition is represented by chemical formula 1. In chemical formula 1, the M is Nb or Ta. The photo-catalyst carries one metal element selected from Pt, Pd, Ag, Ru, and Ni. The content of the metal element is between 0.1 and 1 weight%. A method for manufacturing the photo-catalyst grinds, mixes, and plasticizes ZnO and a metal oxide. The metal oxide is Nb_2O_5 or Ta_2O_5.
Abstract:
PURPOSE: A titanium oxide nanotube material and a manufacturing method thereof are provided to improve electro-optical characteristic by arranging surface or direction of a tetragonal crystal system as a preferred direction. CONSTITUTION: A titanium oxide nanotube material has a crystal structure which is aligned in direction of a tetragonal crystal system as a preferred direction. Full width at half maximum of the rocking curve for surface peak of XRD data(004) is 11.1-20.3 degrees. A manufacturing method of the titanium oxide nanotube material comprises the following steps: preparing electrolyte having the moisture content of 1.5-2.5 wt%; dipping a titanium substrate in a vessel in which electrolyte is put; growing the titanium oxide nanotube on the titanium substrate by processing anodizing; desiccating the titanium substrate by washing; and crystallizing the titanium oxide nanotube by heat-treating the desiccated titanium substrate.
Abstract:
PURPOSE: A phosphor for a white light emitting diode, and the white light emitting diode are provided to performing the visible luminescence with a wide luminous band. CONSTITUTION: A phosphor for a white light emitting diode contains the following: a first element selected from lithium, sodium, potassium, rubidium, or cesium; and a second element selected from magnesium, calcium, strontium, or barium. A part of the second element is substituted with a rare earth element. The phosphor emits light by the excitation of light having the peak wavelength of 200-400nm. The white light emitting diode includes a diode(120) radiating ultraviolet rays or blue light; and the phosphonic acid based phosphor(150).
Abstract:
태양전지는 투명 전극, 반도체막, 형광체 층, 전해질층 및 반대전극을 포함한다. 반도체막은 투명 전극 상에 형성되고 염료가 코팅되어 있다. 형광체 층은 반도체막 상의 제1면에 형성되어 입사된 광의 파장을 변환시키고 산란시켜 반도체 막으로 입사된 광을 재입사시키며 평균 직경은 500nm보다 크고 2000nm이하이다. 전해질층은 제1면을 마주보는 반도체막의 제2면 상에 형성된다. 전해질층 상에 반대전극이 형성된다.
Abstract:
PURPOSE: A visible ray-responsive oxide photo catalyst and a manufacturing method thereof are provided to respond to indoor light like a fluorescent lamp or outdoor and obtain chemical stability. CONSTITUTION: A visible ray-responsive oxide photo catalyst compound is shown as (Sn_(1-x) V_x)(W_(1-y) Mo_y)O4. In the chemical formula, 0
Abstract translation:目的:提供可见光线响应型氧化物光催化剂及其制造方法,以响应诸如荧光灯或室外的室内光,并获得化学稳定性。 构成:可见光线响应氧化物光催化剂化合物显示为(Sn_(1-x)V_x)(W_(1-y)Mo_y)O4。 在化学式中,0 <= x <= 0.5且0 <= y <= 0.5。 氧化锡和氧化钒中的一种与氧化钨和氧化钼之一混合。 将混合物在真空状态或氩气氛下在500至900摄氏度下煅烧,然后冷却。 将冷却的混合物选择性粉碎。