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Patent Agency Ranking
公开(公告)号：KR100874588B1
公开(公告)日：2008-12-16
申请号：KR1020070089905
申请日：2007-09-05
Applicant: 성균관대학교산학협력단
IPC: H01L23/12
CPC classification number: H01L24/13 , H01L21/4853 , H01L24/11 , H01L2224/0231 , H01L2224/0401 , H01L2224/05166 , H01L2224/05644 , H01L2224/05647 , H01L2224/1147 , H01L2224/13099 , H01L2224/13144 , H01L2224/1411 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01072 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/09701 , H01L2924/10329 , H01L2924/3025 , H01L2924/00014
Abstract: The method of manufacturing the flip-chip is provided to lower the material cost and process cost by acting the metal seed layer as the metal pattern for the electrical connection. The method of manufacturing flip chip comprises as follows. A step is for forming the seed layer on the substrate(10). A step is for coating and patterning photoresist or the dry film. A step is for forming the gold bump(18) by performing electroplating. A step is for patterning the seed layer. A step is for forming the insulating layer(12) on the seed layer and gold bump. A step is for patterning the insulating layer.
Abstract translation: 提供了制造倒装芯片的方法，通过使金属种子层作为用于电连接的金属图案来降低材料成本和工艺成本。 制造倒装芯片的方法包括如下。 步骤是在基底（10）上形成种子层。 步骤是用于涂覆和图案化光刻胶或干膜。 通过进行电镀来形成金凸块（18）的步骤。 步骤是图案化种子层。 步骤是在种子层上形成绝缘层（12）和金凸块。 图案化绝缘层的步骤。
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公开(公告)号：KR100871066B1
公开(公告)日：2008-11-27
申请号：KR1020070073321
申请日：2007-07-23
Applicant: 성균관대학교산학협력단
CPC classification number: H01L2224/13
Abstract: The method for manufacturing the high intensity solder bump is provide to improve the electrical mechanical reliability by formation of the metal mini bump. The method for fabricating a high intensity solder bump is provided. A step is for forming the thin conductive film(20) in the substrate. A step is for forming the insulating layer(22) on the thin conductive film. A step is for coating photoresist or the dry film and patterning. A step is for removing photoresist or the dry film by etching the insulating layer. A step is for forming a mini bump. A step is for reflowing the solder to form the solder bump. The mini bump is made of the CuNi nickel - lead or the gold by using electroplating or the electroless plating. The height of the mini bump is 100 micro meters or over 10 micro meters. The substrate is formed with a silicon wafer compound semiconductor wafer quartz glass or a ceramic material.
Abstract translation: 提供高强度焊料凸块的制造方法是通过形成金属微型凸块来提高电气机械可靠性。 提供了制造高强度焊料凸块的方法。 步骤是在衬底中形成薄导电膜（20）。 在薄导电膜上形成绝缘层（22）的步骤。 一步是涂覆光致抗蚀剂或干膜并进行图案化。 通过蚀刻绝缘层来去除光致抗蚀剂或干膜的步骤。 一个步骤是形成一个迷你凸块。 一个步骤是回流焊料以形成焊料凸块。 迷你凸块由CuNi镍铅或金通过使用电镀或无电镀制成。 迷你凸块的高度为100微米或超过10微米。 基板由硅晶片化合物半导体晶片石英玻璃或陶瓷材料形成。
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公开(公告)号：KR101116192B1
公开(公告)日：2012-02-22
申请号：KR1020080065130
申请日：2008-07-04
Applicant: 성균관대학교산학협력단 , 비에스월드시스템 주식회사
Abstract: 본 발명은 구리 및 니켈의 금속 산화물의 고강도 금속 합금 중공구에 관한 것으로, 보다 상세하게는 ⅰ) 구리산화물 분말 50 ~ 95 중량%과 니켈산화물 분말 5 ~ 50 중량%을 혼합하여 산화 혼합물을 수득하는 단계; ⅱ) 상기 산화 혼합물 50 ~ 80 중량%과 용매 20 ~ 50 중량%를 혼합하여 슬러리(slurry)를 제조하는 단계; ⅲ) 슬러리 총 중량 기준으로 10중량% 이하의 PA(폴리아크릴아미드)를 추가하여 혼합하는 단계; ⅳ) 단계 ⅲ)의 상기 슬러리를 폴리머 볼 상에 코팅하고 건조하여 용매를 증발시켜 구리-니켈 산화물을 수득하는 단계; 및 ⅴ) 상기 구리-니켈 산화물을 수소분위기 하에서 가열하여 환원하는 단계를 포함하는 고강도 합금 중공구의 제조방법에 관한 것이다. 이에 의하여 기존 제품에 비해서 기계적 특성이 향상된 고강도 합금 중공구를 제조할 수 있다. 또한, 니켈은 구리와 전율 고용체로서 그 함량의 제한없이 합금화가 유리한 장점을 가지고 있으며, 고온 특성 및 내식성이 우수하다.
구리, 니켈, 고강도 합금 중공구-
公开(公告)号：KR1020100004781A
公开(公告)日：2010-01-13
申请号：KR1020080065130
申请日：2008-07-04
Applicant: 성균관대학교산학협력단 , 비에스월드시스템 주식회사
Abstract: PURPOSE: A method for manufacturing a high-strength alloy hollow sphere is provided to regulate the density of the hollow sphere according to the sintering temperature. CONSTITUTION: A method for manufacturing a high-strength alloy hollow sphere comprises the steps of: obtaining an oxidation mixture by mixing copper oxide powder 50~95 weight% and nickel oxide powder 5~50 weight%, producing a slurry by mixing the oxidation mixture 50~80 weight% with solvent 20~50 weight%, additionally mixing polyacrylamide less than 10 weight% based on the total weight of the slurry, obtaining Cu-Ni oxide by coating and drying the slurry on a polymer ball and evaporating the solvent, and reducing the Cu-Ni oxide in the hydrogen atmosphere.
Abstract translation: 目的：提供一种制造高强度合金中空球的方法，以根据烧结温度来调节中空球的密度。 构成：制造高强度合金中空球的方法包括以下步骤：通过将50〜95重量％的氧化铜粉末与5〜50重量％的氧化镍粉末混合，得到氧化混合物，通过将氧化混合物 50〜80重量％，溶剂20〜50重量％，另外混合聚丙烯酰胺小于10重量％，基于浆料的总重量，通过在聚合物球上涂布和干燥浆料并蒸发溶剂获得Cu-Ni氧化物， 并在氢气氛中还原Cu-Ni氧化物。
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公开(公告)号：KR100871067B1
公开(公告)日：2008-11-27
申请号：KR1020070070499
申请日：2007-07-13
Applicant: 성균관대학교산학협력단
IPC: H01L23/488
CPC classification number: H01L2224/11 , H01L2924/00012
Abstract: The bonding strength of the solder bump can be improved by extending the role of UBM without an additional process. A step is for forming the thin conductive film on the substrate. A step is for forming a photoresist or the dry film in the region except for the bump(14) on the thin conductive film. A step is for forming a bump on the thin conductive film by uisng the electro or electroless plating. A step is for removing photoresist or the dry film. A step is for forming the solder bump by forming the solder(16) on the bump. A step is for performing a reflow process to make the spheric solder bump.
Abstract translation: 通过在没有额外的工艺的情况下扩展UBM的作用，可以提高焊料凸点的结合强度。 在衬底上形成薄导电膜的步骤。 在除了薄导电膜上的凸起（14）之外的区域中形成光致抗蚀剂或干膜的步骤。 通过利用电化学镀或非化学镀来在薄导电膜上形成凸点的步骤。 步骤是去除光致抗蚀剂或干膜。 步骤是通过在凸块上形成焊料（16）来形成焊料凸块。 步骤是进行回流处理以制造球形焊料凸块。
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