公开(公告)号：KR100855449B1

公开(公告)日：2008-09-01

申请号：KR1020070030775

申请日：2007-03-29

Applicant: 성균관대학교산학협력단

Inventor： 이내응 ,  설영국 ,  배진영 ,  박상호

IPC: H01L29/786

CPC classification number: H01L51/105 ,  H01L51/0558

Abstract: A method for fabricating a flexible organic semiconductor device using a multi-functional organic interlayer is provided to improve contact resistance between a source-drain metal electrode and an organic semiconductor. A surface of a substrate(10) including a flexible organic material is processed. An adhesive layer(20) is formed on the surface-processed substrate. A seed layer(30) is formed on one surface of the adhesive layer. A photoresist layer is formed on the seed layer. The photoresist layer is patterned by using a mask having a pattern. A metal gate electrode layer is formed on the pattern of the photoresist layer. The photoresist layer is removed. The adhesive layer and the seed layer are removed from the residual region except for the metal gate electrode layer. An organic insulator layer(70) is formed on one surface of the metal gate electrode layer. An organic semiconductor layer(80) is formed on one surface of the organic insulator layer. A multi-functional organic interlayer(100) is formed on one surface of the organic semiconductor layer. A source-drain electrode layer(90) is formed on one surface of the multi-functional organic interlayer.

Abstract translation: 提供一种使用多功能有机中间层制造柔性有机半导体器件的方法，以提高源极 - 漏极金属电极和有机半导体之间的接触电阻。 处理包括柔性有机材料的基板（10）的表面。 在表面处理基板上形成粘接层（20）。 种子层（30）形成在粘合剂层的一个表面上。 在种子层上形成光致抗蚀剂层。 通过使用具有图案的掩模来对抗蚀剂层进行图案化。 在光致抗蚀剂层的图案上形成金属栅电极层。 去除光致抗蚀剂层。 除了金属栅极电极层之外的残留区域除去粘合剂层和种子层。 在金属栅极电极层的一个表面上形成有机绝缘体层（70）。 在有机绝缘体层的一个表面上形成有机半导体层（80）。 在有机半导体层的一个表面上形成多功能有机中间层（100）。 源极 - 漏极电极层（90）形成在多功能有机中间层的一个表面上。