Abstract:
The present invention provides an image display device having a black coating film obtained by spreading and producing a film using a black coating composition which comprises a black material, a high durability insulating metal oxide particle, a polymerizable compound, and a polymerization initiator. The image display device contains the black material, the high durability insulating metal oxide particle, a thermosetting resin composition and a solvent, wherein the high durability insulating metal oxide particle is a silica or alumina particle with the average particle diameter of 60-150 nm. The image display device includes the black coating film which is obtained by spreading and polymerizing the black coating composition with the polydispersity index of 2.0 or less.
Abstract:
The present invention provides a black coating composition which comprises a black material, a high durability insulating metal oxide particle, a polymerizable compound, and a polymerization initiator. According to the present invention a black coating film with excellent electric conductivity and high and uniform optical density can be produced using the black coating composition. The black coating film has low dielectric properties, high resistance, high heat resistance, high chemical resistance, and high film hardness, and is capable of maintaining electric properties and matter properties regarding a post process, especially a high temperature process.
Abstract:
A method for fabricating a flexible organic semiconductor device using a multi-functional organic interlayer is provided to improve contact resistance between a source-drain metal electrode and an organic semiconductor. A surface of a substrate(10) including a flexible organic material is processed. An adhesive layer(20) is formed on the surface-processed substrate. A seed layer(30) is formed on one surface of the adhesive layer. A photoresist layer is formed on the seed layer. The photoresist layer is patterned by using a mask having a pattern. A metal gate electrode layer is formed on the pattern of the photoresist layer. The photoresist layer is removed. The adhesive layer and the seed layer are removed from the residual region except for the metal gate electrode layer. An organic insulator layer(70) is formed on one surface of the metal gate electrode layer. An organic semiconductor layer(80) is formed on one surface of the organic insulator layer. A multi-functional organic interlayer(100) is formed on one surface of the organic semiconductor layer. A source-drain electrode layer(90) is formed on one surface of the multi-functional organic interlayer.