-
公开(公告)号：KR101879830B1
公开(公告)日：2018-07-19
申请号：KR1020170076941
申请日：2017-06-16
Applicant: 성균관대학교산학협력단
CPC classification number: H03K19/17784 , H03K3/0375 , H03K5/135 , H03K17/6871 , H03K19/0016 , H03K3/356104 , H03K3/012
Abstract: 본발명의플립플롭은, 부스팅커패시터를포함하고, 이전출력신호에대응하여상기부스팅커패시터를미리충전시키고, 상기이전출력신호및 현재입력신호의레벨이서로다른경우상기부스팅커패시터와연결된노드를부스팅시키는조건형부스팅부(conditional boosting stage); 클록신호의천이에대응하여펄스신호를생성하는펄스생성부(pulse generator); 및상기펄스신호에대응하여상기현재입력신호를현재출력신호로래칭하는래치부(latch)를포함한다.
-
公开(公告)号：KR101733676B1
公开(公告)日：2017-05-10
申请号：KR1020160067615
申请日：2016-05-31
Applicant: 성균관대학교산학협력단
IPC: H03F3/45
Abstract: 본발명의전압감지증폭기는, 제1 커패시터를포함하고, 제1 레벨의클록신호에따라상기제1 커패시터에부스팅전압을충전하는부스팅블록(boosting block); 제1 입력전압및 제2 입력전압이각각의게이트단자에인가되고, 제2 레벨의상기클록신호에따라상기부스팅전압이각각의소스단자에인가됨으로써, 제1 중간출력전압및 제2 중간출력전압을각각의드레인단자에서생성하는제1 입력트랜지스터및 제2 입력트랜지스터를포함하는입력스테이지(input stage); 및제2 레벨의상기클록신호에따라상기부스팅전압이각각의소스단자에인가되고, 상기제1 중간출력전압및 상기제2 중간출력전압이각각의게이트단자에인가됨에따라, 제1 최종출력전압및 제2 최종출력전압을결정하는제1 통로트랜지스터및 제2 통로트랜지스터를포함하는래칭스테이지(latching stage)를포함한다.
Abstract translation: 本发明的电压检测放大器包括：升压块，包括第一电容器，并根据第一电平时钟信号向第一电容器充电升压电压; 第一输入电压和第二输入电压被施加到各个栅极端子，并且根据第二电平的时钟信号将升压电压施加到每个源极端子，使得第一中间输出电压和第二中间输出电压 输入级，包括用于在各个漏极端子处生成的第一输入晶体管和第二输入晶体管; 并且第二中间输出电压和第二中间输出电压被施加到各自的栅极端子，根据第二电平的时钟信号将第一最终输出电压和第二中间输出电压施加到各个源极端子， 锁存级包括用于确定第二最终输出电压的第一传输晶体管和第二传输晶体管。
-
公开(公告)号：KR1020120111400A
公开(公告)日：2012-10-10
申请号：KR1020110029848
申请日：2011-03-31
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: H01L21/02587 , B82Y30/00 , B82Y40/00 , C01B32/188 , H01L21/0237 , H01L21/02378 , H01L21/0243 , H01L21/02491 , H01L21/02527 , H01L21/02612 , H01L21/02658 , H01L29/0657 , H01L29/1606
Abstract: PURPOSE: A three-dimensional graphene structure, a manufacturing method of the same, and a transferring method of the same are provided to stably implement a transferring operation and to improve the performance of graphene-based elements. CONSTITUTION: A three-dimensional graphene structure includes periodically repeated three-dimensional shapes. The three-dimensional shapes are hollow hemispherical, cylindrical, or bowl-shaped concave parts or convex parts. The sizes of the three-dimensional shapes are in a range between about 0.1 and 100 um, and the intervals of the three-dimensional shapes are in a range between about 0.1 and 100um. The heights or the depths of the three-dimensional shapes are in a range between about 10nm and about 10um.
Abstract translation: 目的：提供三维石墨烯结构及其制造方法及其转印方法，以稳定地实施转印操作并提高石墨烯元件的性能。 构成：三维石墨烯结构包括周期性重复的三维形状。 三维形状是中空半球形，圆柱形或碗形凹部或凸部。 三维形状的尺寸在约0.1和100μm之间的范围内，并且三维形状的间隔在约0.1和100um之间的范围内。 三维形状的高度或深度在约10nm至约10μm之间的范围内。
-
公开(公告)号：KR101956277B1
公开(公告)日：2019-03-08
申请号：KR1020180034648
申请日：2018-03-26
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
IPC: C01B32/188 , H01L21/02 , B82Y30/00 , B82Y40/00
-
Patent Agency Ranking
公开(公告)号：KR101919423B1
公开(公告)日：2018-11-19
申请号：KR1020120084578
申请日：2012-08-01
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
IPC: H01L29/78 , H01L21/336
CPC classification number: H01L29/06 , B82Y30/00 , B82Y99/00 , C23C18/08 , H01L21/02104 , H01L21/02378 , H01L21/02491 , H01L21/02527 , H01L21/02612 , H01L21/0262 , H01L21/02628 , H01L21/02664 , H01L29/1606 , H01L29/778
Abstract: 그래핀에금속원자층을흡착시킴으로써비화학적결합에의한전자의편재화로인해상기그래핀에밴드갭을형성하여반도체화를달성할수 있다. 이와같은금속함유그래핀은센서, 트랜지스터와같은다양한전기소자에활용할수 있다.
-
公开(公告)号：KR101878730B1
公开(公告)日：2018-07-16
申请号：KR1020110029848
申请日：2011-03-31
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: H01L21/02587 , B82Y30/00 , B82Y40/00 , C01B32/188 , H01L21/0237 , H01L21/02378 , H01L21/0243 , H01L21/02491 , H01L21/02527 , H01L21/02612 , H01L21/02658 , H01L29/0657 , H01L29/1606
Abstract: 3차원그래핀구조체, 그의제조방법및 전사방법이제공된다. 3차원형태의기판상에서 3차원그래핀구조체를형성한후, 이를가스삽입후 분리하여원하는다른절연성필름상에손상없이전사할수 있는방법이제공된다.
-
公开(公告)号：KR101718823B1
公开(公告)日：2017-03-22
申请号：KR1020160082628
申请日：2016-06-30
Applicant: 성균관대학교산학협력단
Abstract: 본발명의링 오실레이터는, 직렬로연결된제1 딜레이유닛, 제2 딜레이유닛, 및제3 딜레이유닛을포함하고, 상기제3 딜레이유닛은제1 부스팅커패시터및 상기제1 부스팅커패시터의일단과소스단자가연결된제1 구동트랜지스터를포함하고, 상기제1 부스팅커패시터의타단의전압은상기제1 딜레이유닛의제1 입력신호에따라결정되고, 상기제1 부스팅커패시터의일단의전압은상기제1 딜레이유닛의제1 출력신호에따라결정되고, 상기제1 구동트랜지스터는게이트단자로인가되는상기제2 딜레이유닛의제2 출력신호에따라드레인단자로제3 출력신호를출력한다.
-
公开(公告)号：KR1020140017399A
公开(公告)日：2014-02-11
申请号：KR1020120084578
申请日：2012-08-01
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
IPC: H01L29/78 , H01L21/336
CPC classification number: H01L29/06 , B82Y30/00 , B82Y99/00 , C23C18/08 , H01L21/02104 , H01L21/02378 , H01L21/02491 , H01L21/02527 , H01L21/02612 , H01L21/0262 , H01L21/02628 , H01L21/02664 , H01L29/1606 , H01L29/778
Abstract: The present invention relates to a graphene semiconductor and an electronic device comprising the same. According to one embodiment of the present invention, the graphene semiconductor includes graphene; and a metal atomic layer formed on the graphene. The metal atomic layer includes metal for transferring charges to the graphene. The metal atomic layer includes alkali metal.
Abstract translation: 本发明涉及一种石墨烯半导体及其制造方法。 根据本发明的一个实施方案，石墨烯半导体包括石墨烯; 以及形成在石墨烯上的金属原子层。 金属原子层包括用于将电荷转移到石墨烯的金属。 金属原子层包括碱金属。
-
公开(公告)号：KR1020140016696A
公开(公告)日：2014-02-10
申请号：KR1020120083763
申请日：2012-07-31
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: G06F11/3409 , G06F11/3058 , G06F11/3414 , G06F11/3438 , G06Q10/0639 , G06F11/22 , G06F9/44 , G06F9/45529 , G06F17/40
Abstract: The present invention relates to an apparatus and a method for evaluating the performance of a system based on the experience of a user. A scenario selection condition for selecting a scenario for the performance evaluation of the embedded system is set, and the experience information of the user according to the operation of the embedded system based on the predetermined condition is collected. The experience information which is necessary to be obtained from the collected experience information based on the set scenario selection condition is analyzed. The optimal scenario for the performance evaluation of the embedded system is selected among a plurality of supportable scenarios based on the analysis result, and the performance for the embedded system is evaluated by the selected scenario. [Reference numerals] (110) Performance evaluation apparatus; (120) Embedded system; (130) Database
Abstract translation: 本发明涉及一种基于用户体验来评估系统的性能的装置和方法。 设置用于选择用于嵌入式系统的性能评估的场景的场景选择条件，并且收集根据预定条件的嵌入式系统的操作的用户体验信息。 分析从基于所设置的场景选择条件的收集的体验信息获得的体验信息。 基于分析结果，在多个可支持场景中选择嵌入式系统的性能评估的最佳场景，并通过选定的场景评估嵌入式系统的性能。 （附图标记）（110）性能评价装置; （120）嵌入式系统; （130）数据库
-
-
-
-
-
-
-
-
Search Results
9
records
(took 0.019 seconds)
