公开(公告)号：KR101081479B1

公开(公告)日：2011-11-08

申请号：KR1020100091776

申请日：2010-09-17

Applicant: 성균관대학교산학협력단

Inventor： 이준신 ,  정호균 ,  정성욱 ,  장경수 ,  이원백 ,  백일호

IPC: H01L29/786 ,  G02F1/136

CPC classification number: H01L29/66757 ,  H01L21/28556 ,  H01L29/458

Abstract: PURPOSE: A method for manufacturing a silicon thin film transistor using a low temperature process is provided to reduce manufacturing costs by simplifying a crystallization process using a laser and a doping process. CONSTITUTION: A buffer layer(110) is formed on a substrate. An n type or p type micro crystal silicon thin film is deposited on the buffer layer. A source electrode or drain electrode is formed by patterning the n type or p type micro crystal silicon thin film. An active layer is formed on the source electrode or drain electrode. An insulation layer and a metal electrode(150) are formed on the active layer. A gate electrode(160) is formed by patterning the active layer, the insulation layer, and the metal electrode on the substrate. The n type or p type micro crystal silicon thin film is formed by a low temperature chemical vapor deposition process.

Abstract translation: 目的：提供使用低温工艺制造硅薄膜晶体管的方法，通过简化使用激光和掺杂工艺的结晶过程来降低制造成本。 构成：在衬底上形成缓冲层（110）。 n型或p型微晶硅薄膜沉积在缓冲层上。 通过图案化n型或p型微晶硅薄膜形成源电极或漏电极。 在源电极或漏电极上形成有源层。 绝缘层和金属电极（150）形成在有源层上。 栅极电极（160）通过在基板上构图有源层，绝缘层和金属电极而形成。 n型或p型微晶硅薄膜是通过低温化学气相沉积工艺形成的。