公开(公告)号：KR101081479B1

公开(公告)日：2011-11-08

申请号：KR1020100091776

申请日：2010-09-17

Applicant: 성균관대학교산학협력단

Inventor： 이준신 ,  정호균 ,  정성욱 ,  장경수 ,  이원백 ,  백일호

IPC: H01L29/786 ,  G02F1/136

CPC classification number: H01L29/66757 ,  H01L21/28556 ,  H01L29/458

Abstract: PURPOSE: A method for manufacturing a silicon thin film transistor using a low temperature process is provided to reduce manufacturing costs by simplifying a crystallization process using a laser and a doping process. CONSTITUTION: A buffer layer(110) is formed on a substrate. An n type or p type micro crystal silicon thin film is deposited on the buffer layer. A source electrode or drain electrode is formed by patterning the n type or p type micro crystal silicon thin film. An active layer is formed on the source electrode or drain electrode. An insulation layer and a metal electrode(150) are formed on the active layer. A gate electrode(160) is formed by patterning the active layer, the insulation layer, and the metal electrode on the substrate. The n type or p type micro crystal silicon thin film is formed by a low temperature chemical vapor deposition process.

Abstract translation: 目的：提供使用低温工艺制造硅薄膜晶体管的方法，通过简化使用激光和掺杂工艺的结晶过程来降低制造成本。 构成：在衬底上形成缓冲层（110）。 n型或p型微晶硅薄膜沉积在缓冲层上。 通过图案化n型或p型微晶硅薄膜形成源电极或漏电极。 在源电极或漏电极上形成有源层。 绝缘层和金属电极（150）形成在有源层上。 栅极电极（160）通过在基板上构图有源层，绝缘层和金属电极而形成。 n型或p型微晶硅薄膜是通过低温化学气相沉积工艺形成的。

公开(公告)号：KR1020110123464A

公开(公告)日：2011-11-15

申请号：KR1020100042964

申请日：2010-05-07

Applicant: 성균관대학교산학협력단

Inventor： 이준신 ,  장경수 ,  박형식 ,  유경열 ,  정성욱 ,  이원백

IPC: C23C14/58 ,  C23C16/56 ,  C23C14/08

Abstract: PURPOSE: A method for improving electrical and optical properties of zinc oxide layer by using hydrogen peroxide is provided to improve quantum efficiency of solar battery by using an oxidation zinc thin film as a transparent conductive film of a solar battery. CONSTITUTION: A method for improving electrical and optical properties of zinc oxide layer by using hydrogen peroxide is as follows. An oxidation zinc thin film is dipped in the mixture of ultra-pure water and hydrogen peroxide and maintained. The oxidation zinc thin film is deposited on the top of a substrate and dipped in the mixture of ultra-pure water and hydrogen peroxide. Resistivity, transmittance and optical bandgap energy are improved. The oxidation zinc thin film is deposited on the top of the substrate as thickness of 900~1100nm. The oxidation zinc thin film is an aluminum doped oxidation zinc thin film. The oxidation zinc thin film, dipped in the mixture of the ultra-pure water and hydrogen peroxide, maintains in solution for 20~40 minutes.

Abstract translation: 目的：通过使用氧化锌薄膜作为太阳能电池的透明导电膜，提供了一种通过使用过氧化氢改善氧化锌层的电学和光学性能的方法，以提高太阳能电池的量子效率。 构成：通过使用过氧化氢改善氧化锌层的电学和光学性质的方法如下。 将氧化锌薄膜浸入超纯水和过氧化氢的混合物中并保持。 将氧化锌薄膜沉积在基材的顶部并浸渍在超纯水和过氧化氢的混合物中。 电阻率，透射率和光学带隙能量得到改善。 氧化锌薄膜沉积在基板的顶部，厚度为900〜1100nm。 氧化锌薄膜是掺铝氧化锌薄膜。 浸在超纯水和过氧化氢的混合物中的氧化锌薄膜在溶液中保持20〜40分钟。