公开(公告)号：KR1020140044763A

公开(公告)日：2014-04-15

申请号：KR1020130119462

申请日：2013-10-07

Applicant: 성균관대학교산학협력단

Inventor： 안종현 ,  조정호 ,  이승기

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L29/1606 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/78603

Abstract: The present invention relates to a graphene field effect transistor with dielectrics and gate electrodes having stable behaviors despite high strains and a method for manufacturing the same. According to an embodiment of the present invention, the method of manufacturing a graphene field effect transistor with dielectrics and gate electrodes having stable behaviors despite high strains includes a step of preparing a monolithically patterned graphene layer; a step of forming an insulating layer; and a step of forming a gate electrode. [Reference numerals] (AA) Patterned graphene; (BB) Rubber; (CC) Aerosol jet printing; (DD) Nozzle; (EE) Ion gel printing; (FF) Ethanol; (GG,HH) Stretch(transformation); (II) PEDOT:PSS printing; (JJ) Hexane evaporation

Abstract translation: 石墨烯场效应晶体管及其制造方法技术领域本发明涉及具有电导率和栅电极的石墨烯场效应晶体管，其具有稳定的行为，并且具有高应变性及其制造方法。 根据本发明的实施例，制造具有稳定行为的电介质和栅电极的石墨烯场效应晶体管的方法，尽管高应变包括制备单片图案化石墨烯层的步骤; 形成绝缘层的步骤; 以及形成栅电极的步骤。 （标号）（AA）图案化石墨烯; （BB）橡胶; （CC）气溶胶喷墨印刷; （DD）喷嘴; （EE）离子凝胶印刷; （FF）乙醇; （GG，HH）拉伸（转化）; （二）PEDOT：PSS印刷; （JJ）己烷蒸发

公开(公告)号：KR1020120034349A

公开(公告)日：2012-04-12

申请号：KR1020100095834

申请日：2010-10-01

Applicant: 성균관대학교산학협력단 ,  숭실대학교산학협력단

Inventor： 안종현 ,  조정호 ,  홍병희 ,  장호욱 ,  이승기 ,  김범준

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L29/0669 ,  H01L29/16 ,  H01L29/4908 ,  H01L51/0045

Abstract: PURPOSE: A flexible field effect transistor and a manufacturing method thereof are provided to manufacture low voltage operation graphene FET(Field Effect Transistor) array on a plastic substrate by using ionic gel for a gate insulator. CONSTITUTION: A semiconductor layer includes a carbon nano-structure which is arranged to form a channel region between a source electrode and a drain electrode. The carbon nano structure includes graphene. The graphene is formed on a metal catalytic layer by chemical vapor deposition. An ionic gel layer is formed between the semiconductor layer and the gate electrode including the carbon nano-structure. The ionic gel layer forms an insulator layer between the channel region and the gate electrode.

Abstract translation: 目的：提供一种灵活的场效应晶体管及其制造方法，通过使用离子凝胶作为栅极绝缘体，在塑料基板上制造低压操作石墨烯FET（场效应晶体管）阵列。 构成：半导体层包括碳纳米结构，其被布置成在源极和漏极之间形成沟道区。 碳纳米结构包括石墨烯。 通过化学气相沉积在金属催化剂层上形成石墨烯。 在半导体层和包括碳纳米结构的栅电极之间形成离子凝胶层。 离子凝胶层在沟道区和栅电极之间形成绝缘体层。

公开(公告)号：KR101489866B1

公开(公告)日：2015-02-06

申请号：KR1020130119462

申请日：2013-10-07

Applicant: 성균관대학교산학협력단

Inventor： 안종현 ,  조정호 ,  이승기

IPC: H01L29/786 ,  H01L21/336

Abstract: 본원은 단일(monolithically) 패터닝된 그래핀 층을 신축성 기재 상에 전사하여 그래핀 전계효과 트랜지스터를 제조하는 방법 및 상기 방법에 의해 제조된 그래핀 전계효과 트랜지스터에 관한 것이다.