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公开(公告)号：KR1020170074973A
公开(公告)日：2017-06-30
申请号：KR1020177014146
申请日：2015-10-29
Applicant: 스미토모덴키고교가부시키가이샤 , 스미또모 덴꼬오 하드메탈 가부시끼가이샤
CPC classification number: C30B29/04 , C01B32/26 , C01P2006/40 , C01P2006/60 , C01P2006/80 , C23C16/27 , C30B25/02 , C30B25/205 , G01K11/18 , G02B5/208
Abstract: 단결정다이아몬드재료는, 410 nm 이상 750 nm 이하의파장의광의투과율이어느파장에있어서도 15% 이하이며, 또한광학적평가에의한전기절연체및 전기적평가에의한전기절연체중 적어도어느하나이다. 여기서, 광학적평가는 10.6 ㎛의파장의광의투과율을 1% 이상으로할 수있고, 전기적평가는평균저항률을 1×10Ωcm 이상으로할 수있다. 이에따라, 가시광영역의전영역의광의투과율이낮고흑색을나타내는단결정다이아몬드재료가제공된다.
Abstract translation: 单晶金刚石材料，甚至超过15％的任何的光透射率在750 nm以上且410nm以下的波长的波长，也就是电绝缘体的所述至少一个电绝缘，并通过光学评估电气评估中的一个。 这里，光学评价可以是10.6㎛波长的透光率不小于1％时，电气评估可以是至少1×10Ωcm的平均电阻率。 结果，提供了在可见光区域的整个区域中呈现低透光率并呈现黑色的单晶金刚石材料。
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公开(公告)号：KR1020090023328A
公开(公告)日：2009-03-04
申请号：KR1020087014482
申请日：2007-06-27
Applicant: 스미토모덴키고교가부시키가이샤
IPC: H01J1/304 , H01J37/073 , H01L21/027 , G03F7/20
CPC classification number: H01J1/304 , B82Y10/00 , B82Y40/00 , H01J37/073 , H01J37/3174 , H01J2201/30457 , H01J2237/06341 , H01J2237/26 , G03F7/20 , G03F7/2059
Abstract: Intended is to provide an electron radiation cathode of a high brightness, low energy dispersion and a long lifetime. Also intended is to provide a diamond electron radiation cathode, which can be sufficiently stably gripped, which is sharpened at its leading end and which is improved in a field intensity. The diamond electron radiation cathode (110) is characterized in that it is divided into at least three regions, that is, a leading end region (203) for irradiating a column-shaped leading end with electrons, a trailing end region (201) confronting in the longitudinal direction and adapted to be gripped, and a radially thinned intermediate region (202), in that the trailing end region has a sectional area of 0.2 mm2, in that the leading region has a sharpened leading end, and in that the radially thinned intermediate region has a sectional area of 0.1 mm2 at most.
Abstract translation: 旨在提供高亮度，低能量分散和长寿命的电子辐射阴极。 还旨在提供一种金刚石电子辐射阴极，其能够被充分稳定地夹持，其在其前端被削尖并且在场强度方面得到改善。 金刚石电子辐射阴极（110）的特征在于，其被划分为至少三个区域，即用于用电子照射柱状前端的前端区域（203），面对着的后端区域（201） 以及径向变薄的中间区域（202），其中后端区域具有0.2mm 2的截面面积，其中前导区域具有尖锐的前端，并且其中径向 变薄的中间区域的截面积最多为0.1mm2。
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公开(公告)号：KR1020170030485A
公开(公告)日：2017-03-17
申请号：KR1020167034482
申请日：2015-07-14
Applicant: 스미토모덴키고교가부시키가이샤 , 스미또모 덴꼬오 하드메탈 가부시끼가이샤
CPC classification number: C30B29/04 , C01B32/25 , C30B25/186 , C30B25/20
Abstract: 경도및 내결손성이균형잡히게향상된단결정다이아몬드, 이단결정다이아몬드의제조방법, 상기다이아몬드를이용한공구를제공한다. 질소원자를포함하는단결정다이아몬드로서, 상기단결정다이아몬드중의전체질소원자수에대한상기단결정다이아몬드중의고립치환형질소원자수의비율이 0.02% 이상 40% 미만인단결정다이아몬드이다.
Abstract translation: 硬度和抗破损性，以及使用钻石的工具。 一种包含氮源的单晶金刚石，其中所述单晶金刚石中分离的离散数量的氮原子的数量与所述单晶金刚石中氮原子的总数之比为0.02％以上且小于40％。
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公开(公告)号：KR1020080090508A
公开(公告)日：2008-10-08
申请号：KR1020087019971
申请日：2007-12-26
Applicant: 스미토모덴키고교가부시키가이샤
IPC: H01L21/205 , C30B29/04
CPC classification number: C30B29/04 , H01L21/02527 , H01L21/02609 , H01L21/02634
Abstract: A process in which a low-resistivity phosphorus-doped epitaxial diamond thin film having a resistivity at 300 K of 300 7cm or lower is grown on the main plane of a {111} single crystal substrate under such conditions that a raw-material gas has a phosphorus atom/carbon atom ratio of 3% or higher, characterized in that the main plane has an off angle of 0.50° or larger. Also provided is a diamond single crystal having a low-resistivity phosphorus-doped epitaxial diamond thin film, characterized in that the surface of the thin film has an off angle of 0.50° or larger with the {111} plane and that the low-resistivity phosphorus-doped epitaxial diamond thin film has a resistivity at 300 K of 300 7cm or lower.
Abstract translation: 在{111}单晶衬底的主平面上生长具有300K的电阻率为300×7cm以下的低电阻率磷掺杂外延金刚石薄膜的工艺，其原料气体具有 磷原子/碳原子数比为3％以上，其特征在于主面的偏角为0.50°以上。 还提供了具有低电阻率磷掺杂外延金刚石薄膜的金刚石单晶，其特征在于，薄膜的表面与{111}面具有0.50°或更大的偏离角，并且低电阻率 磷掺杂的外延金刚石薄膜在300K的电阻率为300±7cm以下。
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