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公开(公告)号：WO2011099750A3
公开(公告)日：2011-08-18
申请号：PCT/KR2011/000823
申请日：2011-02-08
Applicant: 연세대학교 산학협력단 , 이태윤 , 이슬아 , 서정목 , 이현익
Abstract: 본 발명의 실시예에 따른 정렬된 나노선 전사 방법은, 상면에 홈을 갖는 제1 기판의 상기 홈 내에 나노선을 정렬시키는 단계; 및 탄성력과 접착력을 갖는 전사용 부재를 이용하여 상기 제1 기판의 홈 내에 정렬된 나노선을 다른 제2 기판에 옮겨 찍는 단계를 포함한다.
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公开(公告)号：KR1020140079591A
公开(公告)日：2014-06-27
申请号：KR1020120147475
申请日：2012-12-17
Applicant: 연세대학교 산학협력단
Abstract: The present invention relates to a device and a method for controlling surface wetting properties of materials and a lab-on-a-chip using the same. The lab-on-a-chip includes a substrate, a channel which is formed on the substrate and forms a movement path for a sample, and a reactive gas supply unit which supplies reactive gas to the channel. The channel is includes a rough surface material which is formed on the substrate and has roughness larger than the substrate and a reactive material which is formed on the rough surface material and changes its volume by reacting with reactive gas.
Abstract translation: 本发明涉及一种用于控制材料的表面润湿性能的装置和方法，以及使用其的芯片实验室。 芯片实验室包括基板，形成在基板上并形成用于样品的运动路径的通道，以及向通道提供反应性气体的反应气体供应单元。 该通道包括粗糙表面材料，其形成在基底上并具有大于基底的粗糙度和形成在粗糙表面材料上的反应性材料，并通过与反应性气体反应而改变其体积。
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公开(公告)号：KR1020130012642A
公开(公告)日：2013-02-05
申请号：KR1020110073898
申请日：2011-07-26
Applicant: 연세대학교 산학협력단
CPC classification number: C01B32/182 , C01P2006/22 , C23C16/26 , H01B1/04
Abstract: PURPOSE: A graphene composition, a graphene source, a manufacturing method thereof, and a manufacturing method a graphene film using the same are provided to prevent the graphene aggregation in a graphene solution, and to be able to manufacture the graphene film having high smoothness by a simple process. CONSTITUTION: A graphene composition comprises a polymer material, a first solvent, and a second solvent having a lower surface tension and a higher boiling point than the first solvent. The polymer material is a conductive polymer material. The first solvent is at least any one among deionized water, methanol, dimethylformamide, ethylene glycol, and acetone. A manufacturing method of a graphene source comprises a step of injecting the polymer material in a graphene sheet dispersion solution(S100), and a step of adding a secondary solvent having a lower surface tension and a higher boiling point than the main solvent contained the said solution(S300). The polymer material is at least any one among polypyrrole, polyaniline, polythiophene, and PEDOT:PSSs (poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate)), which are conducting polymer materials. [Reference numerals] (S100) Introducing a conductive polymer material into a graphene solution; (S200) Filtering the conductive polymer material using filtering paper; (S300) Introducing a poor solvent
Abstract translation: 目的：提供石墨烯组合物，石墨烯源，其制造方法和使用其的石墨烯膜的制造方法，以防止石墨烯溶液中的石墨烯聚集，并且能够通过以下方式制造具有高平滑度的石墨烯膜： 一个简单的过程。 构成：石墨烯组合物包含聚合物材料，第一溶剂和具有比第一溶剂更低的表面张力和较高沸点的第二溶剂。 聚合物材料是导电聚合物材料。 第一溶剂是去离子水，甲醇，二甲基甲酰胺，乙二醇和丙酮中的至少任一种。 石墨烯源的制造方法包括将聚合物材料注入石墨烯片分散溶液中的步骤（S100），并且添加具有低于包含所述第一溶剂的主溶剂的低表面张力和沸点的第二溶剂的步骤 溶液（S300）。 聚合物材料是导电聚合物材料中的聚吡咯，聚苯胺，聚噻吩和PEDOT：PSS（聚（3,4-亚乙基二氧噻吩）聚（苯乙烯磺酸盐））中的至少任一种。 （附图标记）（S100）将导电性聚合物材料引入石墨烯溶液中; （S200）使用过滤纸过滤导电性聚合物材料; （S300）引入不良溶剂
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公开(公告)号：KR1020120010465A
公开(公告)日：2012-02-03
申请号：KR1020100072023
申请日：2010-07-26
Applicant: 연세대학교 산학협력단
CPC classification number: H01L21/02603 , B82B3/0066 , H01L21/0274
Abstract: PURPOSE: A method for aligning nano-wires is provided to effectively align the nano-wires based on hydrophilicity, hydrophobicity, and photo-sensitive patterns. CONSTITUTION: A method for aligning nano-wires includes the following: a photoresist pattern(620) with a hole structure is formed on the upper side of a substrate(610); a nano-wire aqueous solution is supplied to the hole structure; nano-wires(630) is aligned by evaporating the nano-wire aqueous solution; and the photo-sensitive patterns are eliminated. A material for the photo-sensitive is SU-8. The hydrophilicity and the hydrophobicity of the photo-sensitive patterns and the nano-wires are adjusted on the surface of the substrate.
Abstract translation: 目的：提供一种用于对准纳米线的方法，以有效地对齐基于亲水性，疏水性和光敏图案的纳米线。 构成：用于对准纳米线的方法包括以下：在衬底（610）的上侧形成具有孔结构的光致抗蚀剂图案（620）; 将纳米线水溶液供应到孔结构; 通过蒸发纳米线水溶液对纳米线（630）进行排列; 并且消除了光敏图案。 感光材料是SU-8。 在基板的表面上调整光敏图案和纳米线的亲水性和疏水性。
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Patent Agency Ranking
公开(公告)号：KR1020100042955A
公开(公告)日：2010-04-27
申请号：KR1020080102190
申请日：2008-10-17
Applicant: 연세대학교 산학협력단
IPC: H01L21/8247
Abstract: PURPOSE: A multi level cell nonvolatile memory device is provided to overcome interference between devices due to a scale down using a charge trap region to localize and stores a charge. CONSTITUTION: A semiconductor substrate(101) comprises three source/drain regions(105a) per unit cell or more. A charge trapping insulation unit is formed on a semiconductor substrate. The charge trapping insulation unit includes a charge trap region which traps the charge according to the voltage applied to the source/drain region. A gate electrode(150) is formed on the charge trapping insulation unit. The gate electrode has a flat shape of N polygons. The charge trapping region provides a charge trap site which localizes the charge and stores the charge. The source/drain region is arranged on angular points of N polygon formed by the gate electrode.
Abstract translation: 目的：提供多级单元非易失性存储器件，以克服由于使用电荷陷阱区域缩小而导致器件之间的干扰，以定位和存储电荷。 构成：半导体衬底（101）每单位电池包括三个源/漏区（105a）或更多。 在半导体衬底上形成电荷俘获绝缘单元。 电荷捕获绝缘单元包括根据施加到源极/漏极区域的电压捕获电荷的电荷陷阱区域。 在电荷捕获绝缘单元上形成栅电极（150）。 栅电极具有N个多边形的平坦形状。 电荷捕获区域提供一个电荷陷阱位置，使电荷定位并存储电荷。 源极/漏极区域布置在由栅电极形成的N个多边形的角点上。
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公开(公告)号：KR1020110136980A
公开(公告)日：2011-12-22
申请号：KR1020100056922
申请日：2010-06-16
Applicant: 연세대학교 산학협력단
CPC classification number: H01L21/02603 , G03F7/0002
Abstract: PURPOSE: A method for transferring aligned nano-wires is provided to effectively transfer aligned nano-wires or nano-wire network to the desired position of a substrate using a transferring unit. CONSTITUTION: Nano-wires(10) are aligned in the groove of a first substrate(101) which includes a groove-shaped three dimensional structure on the upper side. While the nano-wires are aligned on the first substrate, a nano-wire dispersing solution is applied to the three dimensional structure of the first substrate. The nano-wire dispersing solution is dried. The aligned nano-wires are transferred to a second substrate(401) using a transferring unit(301). An eliminating unit separates the nano-wires from the upper side of the first substrate.
Abstract translation: 目的：提供用于转移对准的纳米线的方法，以使用转移单元有效地将对准的纳米线或纳米线网络传输到基板的期望位置。 构成：纳米线（10）在第一基板（101）的凹槽中对准，第一基板（101）的上侧包括凹槽形三维结构。 当纳米线在第一衬底上对准时，将纳米线分散溶液施加到第一衬底的三维结构。 将纳米线分散溶液干燥。 使用转移单元（301）将对准的纳米线转移到第二基板（401）。 消除单元将纳米线与第一基板的上侧分开。
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8.发明公开
公开(公告)号：KR1020110093064A
公开(公告)日：2011-08-18
申请号：KR1020100012875
申请日：2010-02-11
Applicant: 연세대학교 산학협력단
CPC classification number: H01L21/02603 , B82Y30/00 , B82Y40/00 , C09D201/00 , H01L29/0669
Abstract: PURPOSE: A method for aligning nano-wires using a groove structure, a three dimensional frame for aligning the nano-wires, and a method for manufacturing the three dimensional frame are provided to efficiently align the nano-wires on a desired position in a nano-wire element manufacturing process. CONSTITUTION: A substrate(201) with a three dimensional structure is prepared. Pluralities of trench grooves, in which both inner walls thereof are inclined, are formed in the three dimension structure. A nano-wires(10) dispersed solution is arranged on the three dimensional structure. The solution is dried to align nano-wires in the trench groove along the longitudinal direction of the trench groove. The trench grooves are parallelly expanded. The cross section shapes of the trench grooves are V-shapes or truncated type inverted pyramid shapes.
Abstract translation: 目的：提供一种使用槽结构对准纳米线的方法，用于对准纳米线的三维框架和用于制造三维框架的方法，以有效地将纳米线对准纳米纳米线的所需位置 线元件制造工艺。 构成：制备具有三维结构的基板（201）。 在三维结构中形成有多个倾斜的两个内壁的沟槽。 纳米线（10）分散溶液布置在三维结构上。 将溶液干燥以沿着沟槽的纵向排列沟槽中的纳米线。 沟槽平行扩大。 沟槽的截面形状是V形或截顶型倒金字塔形状。
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公开(公告)号：KR1020100086867A
公开(公告)日：2010-08-02
申请号：KR1020090006312
申请日：2009-01-23
Applicant: 연세대학교 산학협력단
IPC: H01L21/8247 , H01L27/115
CPC classification number: H01L27/11578 , B82Y10/00 , H01L21/28282 , H01L27/11568 , H01L29/4234 , H01L29/517 , H01L29/66833
Abstract: PURPOSE: A multi-level-cell nonvolatile memory device with a 3D structure and a manufacturing method thereof are provided to sufficiently increase the area of a channel region by forming a recess part with a 3D structure on an active region inside a unit cell. CONSTITUTION: The depression of a reverse pyramid type is formed on an active region of a semiconductor substrate. Three source/drain regions(105a-105d) or more are formed on the semiconductor substrate outside the depression unit per unit cell. A tunneling insulation layer(110) is formed on the inner wall of the depression. A charge trap region is formed on the tunneling insulation layer inside the depression and stores charges. A blocking insulation layer is formed on the charge trap region. A common gate electrode is formed on the blocking insulation layer.
Abstract translation: 目的：提供一种具有3D结构的多电平单元非易失性存储器件及其制造方法，以通过在单元电池内的有源区域上形成具有3D结构的凹部来充分增加沟道区域的面积。 构成：在半导体衬底的有源区上形成倒棱锥型凹陷。 在每单元电池的抑制单元的外侧的半导体基板上形成有三个源极/漏极区域（105a〜105d）以上。 隧道绝缘层（110）形成在凹陷的内壁上。 在凹陷内的隧道绝缘层上形成电荷捕获区，并存储电荷。 在电荷陷阱区上形成阻挡绝缘层。 公共栅电极形成在阻挡绝缘层上。
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公开(公告)号：KR101771362B1
公开(公告)日：2017-08-24
申请号：KR1020160088902
申请日：2016-07-13
Applicant: 연세대학교 산학협력단 , 성균관대학교산학협력단
IPC: G01N7/04 , G01N27/414 , G01N33/00 , G01N1/14
CPC classification number: G01N7/04 , G01N1/14 , G01N27/4141 , G01N33/005
Abstract: 본발명은가스감응형나노엑츄에이터및 그제조방법을개시한다. 본발명의일 실시예에따른가스감응형나노엑츄에이터는복수개의나노필러어레이를포함하는폴리머기판및 상기복수개의나노필러어레이의일면에비대칭으로형성된금속막을포함하고, 상기금속막은외부가스와반응하며, 상기반응에따른부피변화를기반으로상기나노필러어레이의형태가변화하는것을통해가스를검지하는것을특징으로한다.
Abstract translation: 本发明公开了一种气敏纳米致动器及其制造方法。 气体敏感的纳米促动器根据本发明的一个实施例包括多个所述聚合物衬底的非对称地在一侧上与所述多个纳米柱阵列的，其包括纳米柱阵列，形成金属膜，并且与金属膜的气体的外部的反应，并 并基于由反应引起的体积变化通过改变纳米柱阵列的形态来检测气体。
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