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公开(公告)号：KR1020100038554A
公开(公告)日：2010-04-15
申请号：KR1020080097571
申请日：2008-10-06
Applicant: 인하대학교 산학협력단
CPC classification number: G06F17/11 , G06F17/5018
Abstract: PURPOSE: A method for analyzing the finite element of cantilever influenced by a thin film of magnetic deformation is provided to facilitate the designing of a multi-layered thin film system which is configured with magnetostrictive thin films by precisely predicting the displacements of the cantilever. CONSTITUTION: An approximation function is visualized in an element by using a one dimensional linear function, a rule equation becomes a finite element by being implemented. The finite element equation is approximated to one dimensional function, and a system equation is repeatedly calculated. The elements are re-arranged and re-configured.
Abstract translation: 目的：提供一种用于分析受磁变形薄膜影响的悬臂的有限元分析方法，以便通过精确预测悬臂的位移来设计一种多层薄膜系统，该系统由磁致伸缩薄膜构成。 构成：通过使用一维线性函数在元素中可视化近似函数，规则方程通过实现成为有限元。 有限元方程近似于一维函数，并重复计算系统方程。 元素被重新排列并重新配置。
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公开(公告)号：KR1020090114490A
公开(公告)日：2009-11-04
申请号：KR1020080040150
申请日：2008-04-30
Applicant: 인하대학교 산학협력단
CPC classification number: B81B7/0003 , B81B3/00 , B81B2201/054 , G01F22/00
Abstract: PURPOSE: A flow simulator of micro-valve is provided to analyze the velocity field related to the valve flow in a complicated shape and to control the minute quantity of fluid flow. CONSTITUTION: A flow simulator of micro-valve is the flow interpreter of the micro valve which using the finite volume method. It is the automatic lattice generator of the micro valve for the floating analysis. The numerical analysis code finite volume method for the non-orthogonal multi-lattice system using for the automatic grid generation is used.
Abstract translation: 目的：提供微型阀的流动模拟器，以分析与复杂形状的阀流相关的速度场，并控制流体流量的微量。 构成：微型阀的流动模拟器是使用有限体积法的微型阀的流量解释器。 它是用于浮动分析的微型阀的自动点阵发生器。 使用用于自动网格生成的非正交多格子系统的数值分析代码有限体积法。
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公开(公告)号：KR1020080094186A
公开(公告)日：2008-10-23
申请号：KR1020070038297
申请日：2007-04-19
Applicant: 인하대학교 산학협력단
IPC: G02F1/133
CPC classification number: G09G3/006 , G09G3/3614 , G09G2320/0223 , G09G2320/0247
Abstract: An image simulation method for analyzing the electrical characteristic of a TFT-LCD panel is provided to optimize parameters such as the drain, gate, and source of a transistor and the length, width, and thickness of gate and data lines and perform computer simulation for the frame, dot, column inversion driving of an LCD driving method to consider the electrical characteristic of the TFT-LCD panel in transmitting a video signal, thereby solving a problem caused by RC-delay in transmitting the video signal. In an image simulation algorithm, pixels of a 3D(Three-Dimensional) structure are embodied using TechWiz LCD, 3D liquid crystal simulator(S101). Resistance and capacitance is extracted to make a unit-pixel equation circuit(S102). Simulation is performed for the electrical characteristic of a TFT(Thin Film Transistor)-LCD panel to extract a gamma curve and a voltage-transmittance curve(S106,S107).
Abstract translation: 提供了一种用于分析TFT-LCD面板的电气特性的图像模拟方法，以优化诸如晶体管的漏极，栅极和源极以及栅极和数据线的长度，宽度和厚度等参数，并执行计算机模拟 在驱动视频信号时考虑TFT-LCD面板的电气特性的LCD驱动方法的帧，点，列反转驱动，从而解决在发送视频信号时由RC延迟引起的问题。 在图像模拟算法中，使用TechWiz LCD，3D液晶模拟器（S101）来体现3D（三维）结构的像素。 提取电阻和电容以形成单位像素方程电路（S102）。 对TFT（薄膜晶体管）-LCD面板的电气特性进行模拟以提取伽马曲线和电压透过率曲线（S106，S107）。
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Patent Agency Ranking
公开(公告)号：KR1020080092032A
公开(公告)日：2008-10-15
申请号：KR1020070035332
申请日：2007-04-11
Applicant: 인하대학교 산학협력단
CPC classification number: G06F17/5009
Abstract: A method for analyzing electro-optic characteristics in a grid computing environment are provided to shorten time needed for simulating the electro-optic characteristics such as resolution, contrast, color reproducibility, view angle, and response speed of an LCD device by using the grid computing environment. A structure of an LCD unit is laid out and mesh is formed to the generated structure for FEM(Finite Element Method)(120). Liquid crystal behavior distribution is analyzed by calculating physical effect of the liquid crystal according to applied voltage through the FEM(130). Electro-optic characteristics are analyzed by using generated liquid crystal behavior distribution analysis data. The liquid crystal behavior distribution analysis data is divided into the number of nodes defined by a user(200). The divided data is distributed to computer resources(210). Each computer analyzes the electro-optic characteristic by using liquid crystal behavior distribution analysis result data(220), and the result data is transmitted to a server computer(230). The server computer finishes the electro-optic analysis by verifying and merging the result data(250).
Abstract translation: 提供了一种用于分析网格计算环境中的电光特性的方法，以通过使用网格计算来缩短模拟诸如分辨率，对比度，颜色重现性，视角和LCD设备的响应速度的电光特性所需的时间 环境。 布置了LCD单元的结构，并且针对FEM（有限元法）（120）的生成结构形成网格。 通过有限元法（130）根据施加的电压计算液晶的物理效应来分析液晶行为分布。 通过使用产生的液晶行为分布分析数据分析电光特性。 液晶行为分布分析数据被划分为用户定义的节点数（200）。 分割的数据被分配给计算机资源（210）。 每个计算机通过使用液晶行为分布分析结果数据（220）分析电光特性，并将结果数据发送到服务器计算机（230）。 服务器计算机通过验证和合并结果数据来完成电光分析（250）。
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公开(公告)号：KR1020090001651A
公开(公告)日：2009-01-09
申请号：KR1020070044332
申请日：2007-05-08
Applicant: 인하대학교 산학협력단
IPC: G06Q50/04
CPC classification number: Y02P90/30 , G06F17/5036 , G01R33/0286
Abstract: A program development capable of expecting conduct of magnetostrictive MEMS operator is provided to reduce design cost by estimating efficiency of MEMS device by using the program. The program enhance reliability of the simulation result by considering elastic energy of magnetostrictive materials. A program development capable of expecting conduct of magnetostrictive MEMS operator comprises an extracting step of magnetostrictive coefficient and a beam element and a plate element which are proposed for finite element method application.
Abstract translation: 提供能够期待磁致伸缩MEMS操作器的行为的程序开发，以通过使用程序估计MEMS器件的效率来降低设计成本。 该程序通过考虑磁致伸缩材料的弹性能来提高仿真结果的可靠性。 能够期待磁致伸缩MEMS算法的运行的程序开发包括提出用于有限元法应用的磁致伸缩系数的提取步骤和梁元件和板元件。
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公开(公告)号：KR1020080105786A
公开(公告)日：2008-12-04
申请号：KR1020070053812
申请日：2007-06-01
Applicant: 인하대학교 산학협력단
Abstract: A cantilever structure analyzing method considering the acoustic energy is provided to design the cantilever with the excellent performance by measuring the displacement of cross direction. A cantilever manufacturing method comprises the following steps: the step for forming the mask pattern which defines the location on which the trench is created through the lithographic process by putting the polymide(201) substrate in the intermediate layer; the step for forming the trench by etching the polymide substrate until the exposed depth is 50um using the mask pattern as a mask; the step for forming the spacer at the side wall of the trench until the polymide surface is exposed to the trench bottom side; the step for forming the semiconductor film as the optional epitaxial manner on the exposed polymide substrate and filling the trench; the step for forming the TbDyFe thin film of the polymide substrate.
Abstract translation: 提出了考虑声能的悬臂结构分析方法，通过测量横向位移，设计出具有优异性能的悬臂。 悬臂制造方法包括以下步骤：通过将聚酰亚胺（201）衬底放置在中间层中，形成通过光刻工艺限定形成沟槽的位置的掩模图案的步骤; 通过使用掩模图案作为掩模，通过蚀刻聚酰亚胺衬底直到曝光深度为50μm来形成沟槽的步骤; 在所述沟槽的侧壁处形成间隔物的步骤，直到所述多晶硅表面暴露于所述沟槽底侧; 在暴露的聚酰亚胺衬底上形成半导体膜作为任选的外延方法并填充沟槽的步骤; 形成聚酰亚胺基板的TbDyFe薄膜的步骤。
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公开(公告)号：KR1020090115492A
公开(公告)日：2009-11-05
申请号：KR1020080041379
申请日：2008-05-02
Applicant: 인하대학교 산학협력단
IPC: H01L21/336 , B82Y40/00
Abstract: PURPOSE: A modeling and a simulation method of an off-state small signal equivalent circuit are provided to facilitate a nanometer field effect transistor design by modeling the off-state equivalent circuit in a process of a bulk FinFET structure. CONSTITUTION: A Rsub(n) is introduced to a SPICE model parameter. A substrate resistance is considered according to the number of fingers. The Rc representing from an active region to a metal contact and the Rc that is an intrinsic body resistor are included. An equivalent model including a source and drain junction capacity is extracted. The half or quarter is used in a 3D device simulation for reducing mesh according to the number of fingers. The structures with one to four fingers use the half structure. The structures with five to nine fingers apply the quarter structure.
Abstract translation: 目的：提供关闭状态小信号等效电路的建模和仿真方法，以通过在大量FinFET结构的过程中对截止状态等效电路进行建模来促进纳米场效应晶体管的设计。 构成：将Rsub（n）引入到SPICE模型参数中。 根据手指的数量考虑基底电阻。 包括从有源区域到金属接触的Rc和作为本征体电阻器的Rc。 提取包括源极和漏极结能力的等效模型。 半或四分之一用于3D设备模拟，以根据手指的数量减少网格。 一到四个手指的结构使用半结构。 五至九个手指的结构应用四分之一结构。
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公开(公告)号：KR1020090061805A
公开(公告)日：2009-06-17
申请号：KR1020070128756
申请日：2007-12-12
Applicant: 인하대학교 산학협력단
CPC classification number: B81B3/0018 , B81B7/02 , B81B2201/038 , B81B2203/055
Abstract: A cantilever analyzing method is provided to obtain magnetostriction coefficient in consideration of elastic energy and to thereby perform exact structural analysis of an actuator of a magnetostriction MEMS(Micro Electro Mechanical System) having low magnetostriction coefficient. A cantilever analyzing method comprises a step of put a polyamide substrate(201) on an intermediate layer and forming a mask pattern defining the position to form a trench through a lithography process, a step of performing etching using the mask pattern as mask and forming a trench by etching the exposed polyamide substrate, a step of forming a spacer on the side wall of the trench so that the polyamide surface is exposed to the bottom of the trench, a step of forming semiconductor layer by epitaxial growth to fill the trench, and a step of forming a TbDyFe thin film with the polyamide substrate.
Abstract translation: 提供悬臂分析方法以考虑弹性能来获得磁致伸缩系数，从而对具有低磁致伸缩系数的磁致伸缩MEMS（微机电系统）的致动器进行精确的结构分析。 悬臂分析方法包括以下步骤：将聚酰胺基材（201）放置在中间层上，并通过光刻工艺形成限定位置以形成沟槽的掩模图案，使用掩模图案作为掩模进行蚀刻并形成 通过蚀刻暴露的聚酰胺基底，在沟槽的侧壁上形成间隔物的步骤，使得聚酰胺表面暴露于沟槽的底部，通过外延生长形成半导体层以填充沟槽的步骤，以及 与聚酰胺基板形成TbDyFe薄膜的步骤。
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