公开(公告)号：KR100788279B1

公开(公告)日：2008-01-02

申请号：KR1020060091238

申请日：2006-09-20

Applicant: 재단법인서울대학교산학협력재단

Inventor： 김재정 ,  이창화

IPC: H01L21/288 ,  H01L21/208

CPC classification number: H01L21/7684 ,  H01L21/288 ,  H01L21/76877

Abstract: A leveling method in a copper electroless plating process is provided to reduce a stepped part by changing a process without using a leveler. A first super-conformal deposition process is performed on a substrate(10) by using a copper electroless plating solution including a high-density accelerator. An accelerator removal process is performed to remove the high-density accelerator. A second super-conformal deposition process is performed by using the accelerator having density lower than the density of the accelerator. The copper electroless plating solution includes sulfuric acid copper, ethylene-diamine-tetra-acetic acid, formaldehyde, and a pH adjuster. The pH adjuster includes liquid calcium hydroxide and 2,2'-dipyridyl.

Abstract translation: 提供铜无电解电镀工艺中的调平方法以通过改变工艺而不使用矫直机来减小阶梯部分。 通过使用包含高密度促进剂的铜无电镀溶液，在基板（10）上进行第一超保形沉积工艺。 执行加速器去除处理以除去高密度加速器。 通过使用密度低于加速器的密度的加速器来进行第二超适形沉积工艺。 铜化学镀溶液包括硫酸铜，乙二胺四乙酸，甲醛和pH调节剂。 pH调节剂包括液体氢氧化钙和2,2'-二吡啶基。

公开(公告)号：KR1020070059616A

公开(公告)日：2007-06-12

申请号：KR1020050118659

申请日：2005-12-07

Applicant: 주식회사 엘지화학 ,  재단법인서울대학교산학협력재단

Inventor： 김재정 ,  이창화 ,  조성기

IPC: C23C18/54

Abstract: A Cu electroless-plating method which can manufacture a Cu film free of defects in semiconductor wiring by forming a bump as an evidence of the conformal deposition while minimizing roughness of a film by performing conformal deposition of a Cu electroless-plating solution comprising N.N-dimethyl dithiocarbamic acid(3-sulfopropyl)ester and 2,2'-dipyridyl as additives by using electroless-plating only without a seed layer is provided. In a Cu electroless-plating solution for semiconductor Cu wiring comprising copper sulfate, ethylene diamine tetraacetic acid(EDTA), formaldehyde(HCHO), and potassium hydroxide, the Cu electroless-plating solution comprises N.N-dimethyl dithiocarbamic acid(3-sulfopropyl)ester(DPS) and 2,2'-dipyridyl as additives. In Cu electroless-plating for semiconductor Cu wiring, a Cu electroless-plating method comprises performing electrodeposition by performing Cu filling using a Cu electroless-plating solution comprising N.N-dimethyl dithiocarbamic acid(3-sulfopropyl)ester(DPS) and 2,2'-dipyridyl as additives without forming a seed layer. The Cu electroless-plating method comprises the steps of: (i) removing a natural oxide film of a substrate on which a diffusion barrier is formed using an aqueous hydrofluoric acid solution; (ii) activating the surface of the natural oxide film-removed substrate using a palladium catalyst; and (iii) filling Cu into the activated substrate using the Cu electroless-plating solution.

Abstract translation: 一种Cu化学镀方法，其可以通过形成凸起来制造半导体布线中的缺陷的Cu膜，同时通过使包含NN-二甲基甲酰胺的Cu化学镀溶液进行保形沉积来最小化膜的粗糙度 提供二硫代氨基甲酸（3-磺基丙基）酯和2,2'-联吡啶作为添加剂，仅使用无电镀仅用于种子层。 在包含硫酸铜，乙二胺四乙酸（EDTA），甲醛（HCHO）和氢氧化钾的半导体Cu布线的Cu化学镀溶液中，Cu无电镀溶液包含NN-二甲基二硫代氨基甲酸（3-磺丙基）酯 （DPS）和2,2'-联吡啶作为添加剂。 在Cu半导体Cu布线的无电解电镀中，Cu化学镀方法包括通过使用包含N，N-二甲基二硫代氨基甲酸（3-磺基丙基）酯（DPS）的Cu化学镀溶液和2,2' 二吡啶基作为添加剂而不形成种子层。 Cu化学镀方法包括以下步骤：（i）使用氢氟酸水溶液除去其上形成有扩散阻挡层的基板的天然氧化物膜; （ii）使用钯催化剂活化除去天然氧化物膜的表面; 和（iii）使用Cu化学镀溶液将Cu填充到活化的底物中。

公开(公告)号：KR100535977B1

公开(公告)日：2005-12-09

申请号：KR1020030065877

申请日：2003-09-23

Applicant: 주식회사 엘지화학 ,  재단법인서울대학교산학협력재단

Inventor： 김재정 ,  이상철 ,  이창화 ,  차승환

IPC: C23C18/54

Abstract: 본 발명은 전기 도금용 첨가제를 이용한 무전해 도금 방법에 관한 것으로, 피처리물을 첨가제가 함유되지 않은 무전해 도금 용액에 잠복기 동안 침지하여 1차 무전해 도금시킨 후 무전해 도금시킨 피처리물을 첨가제가 함유된 무전해 도금 용액에 침지하여 2차 무전해 도금시킴으로써 첨가제의 효과를 극대화 할 수 있는 무전해 도금 방법을 제공하는 효과가 있다.

公开(公告)号：KR1020050029553A

公开(公告)日：2005-03-28

申请号：KR1020030065877

申请日：2003-09-23

Applicant: 주식회사 엘지화학 ,  재단법인서울대학교산학협력재단

Inventor： 김재정 ,  이상철 ,  이창화 ,  차승환

IPC: C23C18/54

CPC classification number: C23C18/1651 ,  C23C18/405 ,  C23C18/44

Abstract: To provide an electroless plating method using additives for electroplating, the method for enabling additives effectively used in electroplating process to obtain an equal effect also in electroless plating process. The electroless plating method using additives for electroplating comprises: a step(a) of primarily electroless plating the treating object by dipping a treating object into an electroless plating solution for a concealment period, wherein the electroless plating solution does not contain additives; and a step(b) of secondly electroless plating the treating object by dipping the electroless plated treating object into an electroless plating solution containing the additives, wherein the additives are additives used in electroplating that are selected from the group consisting of an accelerating agent, an inhibitor and a stabilizer, wherein the electroless plating solution a copper plating solution containing copper ions or a silver plating solution containing silver ions, and wherein the method comprises a step(a) of primarily electroless plating copper on the treating object by dipping a treating object into an electroless copper plating solution comprising 5 to 8 g/L of copper sulfate, 2 to 3.5 g/L of formaldehyde, 14 to 18 g/L of ethylenediamine tetra acetic acid and 20 to 35 g/L of potassium hydroxide for a concealment period; and a step(b) of secondly electroless plating copper on the electroless copper plated treating object by dipping the electroless copper plated treating object into an electroless copper plating solution containing SPS(4,5-dithiaoctane-1,8-disulfonic acid) or MPSA(3-mercapto-1-propanesulfonate) in the electroless copper plating solution of the step(a).

Abstract translation: 为了提供使用用于电镀的添加剂的无电镀方法，可以在电镀工艺中有效使用添加剂的方法在化学镀处理中获得相同的效果。 使用电镀用添加剂的化学镀方法包括：通过将处理物浸渍到化学镀溶液中进行隐蔽处理，主要通过将处理物进行无电镀处理的步骤（a），其中化学镀溶液不含添加剂; 以及步骤（b），其通过将无电镀处理物浸渍到含有添加剂的无电解镀液中来对处理对象进行第二次无电镀处理，其中所述添加剂是电镀中使用的添加剂，其选自加速剂， 抑制剂和稳定剂，其中所述化学镀溶液是含有铜离子的镀铜溶液或含有银离子的镀银溶液，并且其中所述方法包括通过浸渍处理对象在处理对象上主要无电镀铜的步骤（a） 成为含有5〜8g / L的硫酸铜，2〜3.5g / L的甲醛，14〜18g / L的乙二胺四乙酸和20〜35g / L氢氧化钾的化学镀铜液，用于隐蔽 期; 以及通过将无电镀铜处理物浸渍到含有SPS（4,5-二硫辛烷-1,8-二磺酸）或MPSA的无电镀铜溶液中的无电镀铜处理物上的第二次无电镀铜的步骤（b） （3-巯基-1-丙磺酸盐）在步骤（a）的无电镀铜溶液中。

公开(公告)号：KR1020060067454A

公开(公告)日：2006-06-20

申请号：KR1020040106239

申请日：2004-12-15

Applicant: 주식회사 엘지화학 ,  재단법인서울대학교산학협력재단

Inventor： 김재정 ,  이창화 ,  이상철

IPC: C23C18/16

Abstract: 본 발명은 무전해 도금을 이용하여 패턴 내 금속배선을 형성하는 방법에 관한 것으로, 1차 시드층 형성시 코발트 또는 포름알데히드를 환원제로 사용하여 구리 무전해 도금용액에서 얇고 균일한 시드층을 형성하는 단계와, 디시아옥탄디술폰산(4,5-dithiaoctane-1,8-disulfonic acid) 또는 멀캡토프로판술포네이트 (3-mercapto-1-propanesulfonate)를 첨가제로 사용하여 bottom-up filling 방식으로 패턴을 금속으로 채우는 단계를 포함하여 이루어지며, 본 발명에 의한 무전해 도금을 이용한 패턴 내 금속배선 형성방법은 금속 배선의 표면 거칠기를 감소시키고 막질을 향상시키며, 보이드(void)나 씸(seam)과 같은 결점이 없이 bottom-up filling 방식으로 채워 범프(bump)를 형성시킬 수 있는 효과가 있다.
무전해 도금, 디시아옥탄디술폰산(4,5-dithiaoctane-1,8-disulfonic acid), 멀캡토프로판술포네이트 (3-mercapto-1-propanesulfonate), SPS, MPSA, 보이드(void), 씸(seam), bottom-up filling, 범프(bump)

公开(公告)号：KR100752504B1

公开(公告)日：2007-08-27

申请号：KR1020040106239

申请日：2004-12-15

Applicant: 주식회사 엘지화학 ,  재단법인서울대학교산학협력재단

Inventor： 김재정 ,  이창화 ,  이상철

IPC: C23C18/16

Abstract: 본 발명은 무전해 도금을 이용하여 패턴 내 금속배선을 형성하는 방법에 관한 것으로, 1차 시드층 형성시 코발트 또는 포름알데히드를 환원제로 사용하여 구리 무전해 도금용액에서 얇고 균일한 시드층을 형성하는 단계와, 디시아옥탄디술폰산(4,5-dithiaoctane-1,8-disulfonic acid) 또는 멀캡토프로판술포네이트 (3-mercapto-1-propanesulfonate)를 첨가제로 사용하여 bottom-up filling 방식으로 패턴을 금속으로 채우는 단계를 포함하여 이루어지며, 본 발명에 의한 무전해 도금을 이용한 패턴 내 금속배선 형성방법은 금속 배선의 표면 거칠기를 감소시키고 막질을 향상시키며, 보이드(void)나 씸(seam)과 같은 결점이 없이 bottom-up filling 방식으로 채워 범프(bump)를 형성시킬 수 있는 효과가 있다.
무전해 도금, 디시아옥탄디술폰산(4,5-dithiaoctane-1,8-disulfonic acid), 멀캡토프로판술포네이트 (3-mercapto-1-propanesulfonate), SPS, MPSA, 보이드(void), 씸(seam), bottom-up filling, 범프(bump)

公开(公告)号：KR1020090102464A

公开(公告)日：2009-09-30

申请号：KR1020080027928

申请日：2008-03-26

Applicant: 재단법인서울대학교산학협력재단

Inventor： 김재정 ,  이창화 ,  김애림

IPC: C23C18/38

Abstract: PURPOSE: An electroless plating solution and a plating method using the same are provided to performing electrodeposition using a first and second plating solution on patterns having different sizes each other and fill without the amount of electroposition. CONSTITUTION: A method for plating with electroless plating solution comprises: a step (S110) of removing a natural oxidation film of a substrate by dipping a pattern substrate in hydrofluoric acid solution; a step (S130) of activating the surface of substrate with palladium catalyst; and a step (S140) of performing electrodeposition with electrodeposition solution.

Abstract translation: 目的：提供一种化学镀溶液和使用该方法的电镀方法，以使用第一和第二电镀溶液对具有不同尺寸的图案进行电沉积，并填充而不具有电穿孔量。 构成：使用无电镀液进行电镀的方法包括：通过将图案基板浸渍在氢氟酸溶液中来除去基板的天然氧化膜的工序（S110） 用钯催化剂活化底物表面的步骤（S130） 以及用电沉积溶液进行电沉积的步骤（S140）。