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公开(公告)号：KR1020010010469A
公开(公告)日：2001-02-15
申请号：KR1019990029367
申请日：1999-07-20
Applicant: 전자부품연구원
IPC: H01L21/306
Abstract: PURPOSE: A method of manufacturing a silicon membrane is to measure only a change of a reflecting light due to removal of a reflecting film, therefor obtaining a uniform thickness of the silicon membrane independent of a temperature of an etching solution. CONSTITUTION: A method of manufacturing a silicon membrane comprises the steps of: forming at least one of an etching area by etching a portion of the first surface of a silicon substrate(100); depositing a reflecting film on the etching area; forming a protecting film(300) on the first surface and the second surface opposite to the first surface; forming the first opening as a measuring area and the second opening as an active area by etching the portion of the protecting film on the second surface; and etching the measuring area and the active area using the remaining protecting film as an etching mask until all of the metal film is etched.
Abstract translation: 目的：制造硅膜的方法是仅测量由于去除反射膜而导致的反射光的变化，从而获得与膜的温度无关的硅膜的均匀厚度。 构成：制造硅膜的方法包括以下步骤：通过蚀刻硅衬底（100）的第一表面的一部分来形成蚀刻区域中的至少一个; 在蚀刻区域上沉积反射膜; 在与第一表面相对的第一表面和第二表面上形成保护膜（300）; 通过蚀刻第二表面上的保护膜的部分，形成作为测量区域的第一开口和第二开口作为有源区域; 并使用剩余的保护膜作为蚀刻掩模蚀刻测量区域和有源区域，直到蚀刻所有金属膜。
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公开(公告)号：KR100350853B1
公开(公告)日：2002-09-09
申请号：KR1019990048845
申请日：1999-11-05
Applicant: 전자부품연구원
Abstract: 본발명의저온소결압전체조성및 이조성에따른저온소결압전체제조방법은치환된저온소결 PZT계압전체또는복합 3성분계저온소결 PZT계압전체중 하나에대한조성물에대한질량을측정하는단계, 상기질량을측정한저온소결 PZT계압전체조성물들을섞어가열하는하소단계, 저온소결조제인 BaO-CuO의질량을측정하여하소단계를마친저온소결 PZT계압전체조성물과섞는단계, 저온압전체조성물을일정온도로가열하여소결하는단계, 소결단계를마친저온압전체에전극을형성하고전계를가하여분극공정을실시한다음, 전극에전원을인가하여저온압전체의물성을평가하는단계를포함한다. 따라서, 저온소결압전체를제조함에있어서저온소결조제로 BaO-CuO를사용할경우물성이개선된압전체를만들수 있을뿐만아니라소결온도를낮출수 있다.
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公开(公告)号：KR100291555B1
公开(公告)日：2001-05-15
申请号：KR1019990029367
申请日：1999-07-20
Applicant: 전자부품연구원
IPC: H01L21/306
Abstract: 이발명은기판식각장치및 이를이용한실리콘멤브레인제조방법을개시한다. 실리콘기판의하부면의일부를설정된실리콘멤브레인두께만큼식각하여적어도하나이상의식각영역을형성한다음, 식각영역에각각금속막을증착한다. 다음에실리콘기판의상하부면에보호막을형성하고, 실리콘기판의상부면에형성된보호막의일부를제거하여식각영역에대응하는측정영역의제1 개구부와소자를형성하기위한활성영역의제2 개구부를형성한다. 보호막중 제거되지않은보호막을식각마스크로하여제1 및제2 개구부를통하여측정영역이및 활성영역을식각하며, 식각시에일정량의광을식각영역의금속막으로조사한다. 제1 개구부를통하여금속막이노출됨에따라금속막으로조사되는광의일부가투과되어금속막으로부터반사되는광의세기가최고치에서감소되기시작하여, 금속막이모두식각되어반사되는광이최소치로감소되는구간내에서식각공정을종료한다. 따라서, 식각용액의농도및 온도변화그리고식각시간에상관없이설정된두께를가지는실리콘멤브레인을용이하게제조할수가있다.
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公开(公告)号：KR1020010045525A
公开(公告)日：2001-06-05
申请号：KR1019990048845
申请日：1999-11-05
Applicant: 전자부품연구원
Abstract: PURPOSE: A method for manufacturing a low temperature sintering piezoelectric composition is provided to improve a physical property of a piezoelectric material composed of a substituted piezoelectric composition and to decrease a sintering temperature. CONSTITUTION: Mass regarding a composition of either a substituted low temperature sintering PZT-based piezoelectric material or composite 3-component low temperature sintering PZT-based piezoelectric material, is measured. The low temperature sintering PZT-based piezoelectric compositions of which mass is measured, are mixed while calcined. Mass of BaO-CuO as a low temperature sintering agent is measured and mixed with the calcined low temperature sintering PZT-based piezoelectric composition. The low temperature piezoelectric composition is heated to a predetermined temperature and sintered. An electrode is formed on the sintered low temperature piezoelectric material, and an electric field is applied to perform a polarization process. Power is applied to the electrode to determine a physical property of the low temperature piezoelectric material.
Abstract translation: 目的：提供一种制造低温烧结压电组合物的方法，以改善由取代的压电组合物构成的压电材料的物理性能并降低烧结温度。 组成：测量取代的低温烧结PZT基压电材料或复合三组分低温烧结PZT基压电材料的组成的质量。 测量质量的低温烧结PZT基压电组合物在煅烧时混合。 测量作为低温烧结剂的BaO-CuO的质量，并与煅烧的低温烧结PZT基压电组合物混合。 将低温压电组合物加热到预定温度并烧结。 在烧结的低温压电材料上形成电极，施加电场以进行极化处理。 对电极施加功率以确定低温压电材料的物理性质。
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