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公开(公告)号：KR101354637B1
公开(公告)日：2014-01-22
申请号：KR1020090134325
申请日：2009-12-30
Applicant: 제일모직주식회사
CPC classification number: G03F7/0752 , G03F7/094 , G03F7/11
Abstract: 본 발명에서는 하기 화학식 1로 표시되는 구조단위 10 내지 40 몰%를 포함하는 유기실란계 축중합물 및 용매를 포함하는 레지스트 하층막용 조성물이 제공된다.
[화학식 1]
상기 화학식 1에서 ORG의 정의는 명세서에 기재한 바와 같다.
이로써, 본 발명은 저장안정성 및 내에칭성이 우수한 레지스트 하층막을 제공하여 우수한 패턴을 전사할 수 있는 레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법을 제공할 수 있다.
레지스트 하층막, 유기실란계 축중합물, 저장안정성, 내에칭성-
公开(公告)号：KR101344795B1
公开(公告)日：2013-12-26
申请号：KR1020090136179
申请日：2009-12-31
Applicant: 제일모직주식회사
IPC: G03F7/11 , G03F7/075 , H01L21/027
CPC classification number: G03F7/0752 , C08G77/16 , C08G77/18 , C08L83/04 , C08L83/06 , G03F7/11 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/0332
Abstract: 이로써, 본발명은저장안정성및 내에칭성이우수한레지스트하층막을제공하여우수한패턴을전사할수 있는레지스트하층막용조성물및 이를이용한반도체집적회로디바이스의제조방법을제공할수 있다.
Abstract translation: 因此，本发明可以提供一种贮存稳定性和耐蚀刻性是用于制造设置成优异的转印图案的抗蚀剂采用相同的组合物的下层膜和下层抗蚀剂膜优异的半导体集成电路器件的方法。
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公开(公告)号：KR1020110079195A
公开(公告)日：2011-07-07
申请号：KR1020090136179
申请日：2009-12-31
Applicant: 제일모직주식회사
IPC: G03F7/11 , G03F7/075 , H01L21/027
CPC classification number: G03F7/0752 , C08G77/16 , C08G77/18 , C08L83/04 , C08L83/06 , G03F7/11 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/0332 , G03F7/091
Abstract: PURPOSE: A resist sublayer composition and a method for manufacturing a semiconductor integrated circuit using the same are provided to easily control the surface of a hydrophilic characteristic or the hydrophobic characteristic by increasing the content of silicon without a silane compound. CONSTITUTION: A resist sublayer composition includes a solvent and an organic silane-based polycondensate containing a structural unit represented by chemical formula 1. In the chemical formula 1, the ORG is selected from a group including C6 to C30 functional group containing substituted or non-substituted aromatic ring, C1 to C12 alkyl group, and Y-(Si(OR)_3)_a. The R is C1 to C6 alkyl group. The Y is linear or branched substituted or non-substituted C1 to C20 alkylene group, or substituted alkylene group. The a is 1 or 2. The Z is selected from a group including hydrogen and C1 to C6 alkyl group.
Abstract translation: 目的：提供抗蚀剂亚层组合物和使用其的半导体集成电路的制造方法，通过增加不含硅烷化合物的硅含量，容易地控制亲水性特性或疏水性表面。 构成：抗蚀剂亚层组合物包含溶剂和含有由化学式1表示的结构单元的有机硅烷类缩聚物。在化学式1中，ORG选自含有取代或未取代的C6〜C30官能团的基团， 取代芳环，C1〜C12烷基，Y-（Si（OR）_3）_a。 R为C1至C6烷基。 Y是直链或支链取代或未取代的C1至C20亚烷基或取代的亚烷基。 a为1或2.Z选自包括氢和C 1至C 6烷基的基团。
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公开(公告)号：KR1020110079194A
公开(公告)日：2011-07-07
申请号：KR1020090136178
申请日：2009-12-31
Applicant: 제일모직주식회사
IPC: G03F7/11
CPC classification number: G03F7/0752 , G03F7/09 , G03F7/11
Abstract: PURPOSE: A photo-resist sublayer composition and a method for manufacturing a semiconductor device using the same are provide to stably form a photo-resist pattern and easily control the surface material characteristic. CONSTITUTION: A photo-resist sublayer composition includes a solvent and a polysiloxane resin represented by chemical formula 1. In the chemical formula 1, the x, the y, and the z represents the relative ratio of the (SiO_1.5Y-SiO_1.5)_x repeating unit, the (SiO_2)_y repeating unit, the (XSiO_1.5)_z repeating unit. The e and the f represents the ratio of the number of OH groups and OR groups, which is bonded with the silicon atom in the polysiloxane resin, with respect to the 2x+Y+z of silicon atoms. The R1 is C1 to C6 alkyl group. The X is substituted or non-substituted C6 to C30 aryl group or C3 to C30 hetero aryl group. The Y is substituted or non-substituted C6 to C30 aryl group, C3 to C30 hetero aryl group, C1 to C20 linear or branched substituted or non-substituted akylene group, C1 to C20 alkylene group, C2 to C20 hydrocarbon group with a double bond or a triple bond, and the combination of the same.
Abstract translation: 目的：提供光致抗蚀剂亚层组合物和使用其的半导体器件的制造方法，以稳定地形成光刻胶图案并容易地控制表面材料特性。 构成：光抗蚀剂亚层组合物包括溶剂和由化学式1表示的聚硅氧烷树脂。在化学式1中，x，y和z表示（SiO_1.5Y-SiO_1.5 ）_x重复单元，（SiO_2）_y重复单元，（XSiO_1.5）_z重复单元。 e和f表示与硅原子的2x + Y + z相关的与硅氧烷树脂中的硅原子键合的OH基和OR基的数目的比例。 R1是C1-C6烷基。 X是取代或未取代的C6至C30芳基或C3至C30杂芳基。 Y为取代或未取代的C6至C30芳基，C3至C30杂芳基，C1至C20直链或支链取代或未取代亚烷基，C1至C20亚烷基，C2至C20烃基双键 或三键，以及它们的组合。
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公开(公告)号：KR1020110077683A
公开(公告)日：2011-07-07
申请号：KR1020090134325
申请日：2009-12-30
Applicant: 제일모직주식회사
CPC classification number: G03F7/0752 , G03F7/094 , G03F7/11
Abstract: PURPOSE: A composition for a resist sub layer and a method for manufacturing a semiconductor integrated circuit device using the same are provided to effectively transfer desired patterns and easily control the hydrophilic or hydrophobic surface characteristic. CONSTITUTION: A composition for a resist sub layer includes a solvent and organic silane-based polycondensate containing 10 to 40 mol% of a structural unit represented by chemical formula 1. In the chemical formula 1, the ORG is selected from a group including C6 to C30 functional group containing a substituted or non-substituted aromatic ring, C1 to C12 alkyl group, and -Y-SI(OR)3a. The R is C1 to C6 alkyl group. The Y is linear or branched and substituted or non-substituted C1 to C20 alkylene group, or C1 to C20 alkylene group containing a substituted group which is selected from alkenylene group, alkynylene group, arylene group, a hetero ring group, urea group, isocyanurate, and the combination of the same in a main chain. The a is 1 or 2.
Abstract translation: 目的：提供一种抗蚀剂子层用组合物和使用该组合物的半导体集成电路器件的制造方法，以有效地转印所需图案并容易地控制亲水或疏水表面特性。 构成：抗蚀剂子层用组合物包含溶剂和含有10〜40摩尔％的化学式1表示的结构单元的有机硅烷类缩聚物。在化学式1中，ORG选自包括C6〜 含有取代或未取代的芳环，C 1至C 12烷基和-Y-SI（OR）3a的C 30官能团。 R为C1至C6烷基。 Y为直链或支链，取代或未取代的C1至C20亚烷基或含有选自亚烯基，亚炔基，亚芳基，杂环基，脲基，异氰脲酸酯基的取代基的C1至C20亚烷基 ，以及在主链中的相同的组合。 a是1或2。
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Patent Agency Ranking
公开(公告)号：KR100930674B1
公开(公告)日：2009-12-09
申请号：KR1020080079227
申请日：2008-08-13
Applicant: 제일모직주식회사
CPC classification number: C07F7/0845 , C08L83/04 , H01L21/02123
Abstract: PURPOSE: A compound for applying and filling micro gap in a node separation process is provided to prevent defect such as air void and enables wet etch of hole inner material. CONSTITUTION: A compound for filling gap denoted by the chemical formula 6({{SiO1.5[CH2]l[(CH2)mO]nR2}a(SiO1.5X)b(SiO1.5R4)c(SiO1.5-Y-SiO1.5)d}p(OR7)q) is prepared by condensing a condensation polymer of hydrolysates generated from one or more compound(b) among a compound of the chemical formula 1([R1]3Si-[CH2]l[(CH2)mO]nR2), a compound of the chemical formula 2([R1]3Si-X), a compound of the chemical formula 3([R1]3Si-R4) and a compound of the chemical formula 4([R1]3Si-Y-Si[R5]3) with a compound of the chemical formula 5(R63Si-R1). A composition for applying semiconductor and filling micro gap contains the compound of the chemical formula 6 and 100-10,000 weight parts of solvent per 100 weight parts of the compound of the chemical formula 6. The solvent is alcohols, acetates, esters, glymes, ethers or carboxy ketones.
Abstract translation: 目的：提供一种用于在节点分离过程中施加和填充微间隙的化合物，以防止诸如空气空隙的缺陷，并且能够对孔内部材料进行湿蚀刻。 构成：由化学式6（{{SiO 1.5 [CH 2] l [（CH 2）m O] n R 2} a（SiO 1.5 X）b（SiO 1.5R 4）c（SiO 1.5-Y -SiO1.5）d} p（OR7）q）是通过将化学式1化合物（[R 1] 3 Si- [CH 2] 1]中的一种或多种化合物（b）产生的水解产物的缩合物缩合， （CH 2）m O] n R 2），化学式2（[R 1] 3 Si-X）的化合物，化学式3（[R 1] 3 Si-R 4）的化合物和化学式4的化合物 ] 3Si-Y-Si [R 5] 3）与化学式5的化合物（R63Si-R1）反应。 用于施加半导体和填充微细间隙的组合物包含化学式6的化合物和每100重量份化学式6化合物的100-10,000重量份溶剂。溶剂是醇，乙酸酯，酯，甘醇醚，醚 或羧基酮。
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公开(公告)号：KR101266290B1
公开(公告)日：2013-05-22
申请号：KR1020080137420
申请日：2008-12-30
Applicant: 제일모직주식회사
CPC classification number: G03F7/11 , C08K5/54 , G03F7/0752
Abstract: 본발명의레지스트하층막용하드마스크조성물은 250 nm 이하의파장에서흡광하고우수한코팅성과겔성디펙이없는특징을가지며, 하드마스크특성이우수하여재료층에훌륭한패턴을전사할수 있다.
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8.发明公开미세 갭필용 중합체, 이를 포함하는 미세 갭필용 조성물, 및 이를 이용한 반도체 집적회로 디바이스의 제조방법 无效用于气隙填充的聚合物，包括其的组合物，使用该组合物生产集成电路装置的方法
公开(公告)号：KR1020110074253A
公开(公告)日：2011-06-30
申请号：KR1020090131165
申请日：2009-12-24
Applicant: 제일모직주식회사
IPC: C08G77/04 , C08L83/04 , H01L21/469 , H01L21/76
CPC classification number: C07F7/0852 , H01L21/76877
Abstract: PURPOSE: A gap-filling composition is provided to prevent change of developing rate and molecular weight and to completely fill a hole having 70 nm or less of diameter. CONSTITUTION: A gap-filling polymer has a substituent which is induced from a compound of chemical formula 1(HOOC-(CH_2)_l-R^1_2Si-O-SiR^1'_2-(CH_2)_l-COOH). In chemical formula 1, R^1 and R^1' are identically or differently alkyl group of 1-12 carbon atoms or substituted or non-substituted aryl group of 6-20 carbon atoms; and I is individually 0 or integer of 1-10.
Abstract translation: 目的：提供间隙填充组合物以防止显影速率和分子量的变化，并且完全填充具有70nm或更小直径的孔。 构成：间隙填充聚合物具有由化学式1的化合物（HOOC-（CH 2）1-R 1）2 Si-O-SiR 1'2 - （CH 2）1 -COOH）诱导的取代基。 在化学式1中，R 1和R 9'与1-12个碳原子相同或不同的烷基或6-20个碳原子的取代或未取代的芳基; 我个人为0或1-10的整数。
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公开(公告)号：KR1020110043994A
公开(公告)日：2011-04-28
申请号：KR1020090100776
申请日：2009-10-22
Applicant: 제일모직주식회사
IPC: H01L21/108 , H01L21/8242
CPC classification number: C08G77/18 , C08G77/16 , H01L21/324 , H01L21/565 , H01L28/40
Abstract: PURPOSE: A filler for a semiconductor capacitor and method for manufacturing a semiconductor capacitor using the same are provided to convert a silicon based compound with a t-butyloxycarbonyl group into a carboxyl group by a heating process, thereby increasing development performance. CONSTITUTION: A conductive layer is formed on the semiconductor substrate(1). A filling layer is formed by coating the conductive layer with filler. A part of the conductive layer is eliminated to form a first electrode(5a). A dielectric layer(9) is formed on the first electrode. A second electrode(11) is formed on the dielectric layer.
Abstract translation: 目的：提供一种半导体电容器用填充材料及使用该填充材料的半导体电容器的制造方法，其通过加热工序将具有叔丁氧羰基的硅系化合物转化成羧基，从而提高显影性能。 构成：在半导体衬底（1）上形成导电层。 通过用填料涂覆导电层形成填充层。 消除导电层的一部分以形成第一电极（5a）。 在第一电极上形成介电层（9）。 在电介质层上形成第二电极（11）。
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公开(公告)号：KR1020100079020A
公开(公告)日：2010-07-08
申请号：KR1020080137420
申请日：2008-12-30
Applicant: 제일모직주식회사
CPC classification number: G03F7/11 , C08K5/54 , G03F7/0752 , G03F7/004 , G03F7/0043 , G03F7/0045 , G03F7/075 , G03F7/0754
Abstract: PURPOSE: A hard mask composition for a resist under-layer, and a manufacturing method of a semiconductor integrated circuit device using thereof are provided to secure the excellent coating performance of the composition, and to transfer an improved pattern on a material layer. CONSTITUTION: A hard mask composition for a resist under-layer contains the following: more than one compound selected from the group consisting of compounds marked with [R1]3Si-(CH2)nR2, [R1]3Si-R4-Si[R1]3, and chemical formula 2 ; an organic silane polymeric compound selected from the group consisting of compounds marked with [R1]3Si-R5 and [R1]3Si-X-Si[R1]3; and a solvent. In chemical formulas, R1 is selected from the group consisting of a halogen group, an alkoxy group, a carboxy group, and others. R2 is either anthracenyl or naphthyl. R5 is either H or an alkyl group with the carbon number of 1~6.
Abstract translation: 目的：提供一种抗蚀剂层下的硬掩模组合物及其使用的半导体集成电路器件的制造方法，以确保组合物的优异的涂布性能，并将改善的图案转印到材料层上。 构成：用于抗蚀剂底层的硬掩模组合物包含以下：多于一种选自由[R 1] 3 Si-（CH 2）n R 2，[R 1] 3 Si-R 4 -Si [R 1] 3，化学式2; 选自由[R 1] 3 Si-R 5和[R 1] 3 Si-X-Si [R 1] 3标记的化合物的有机硅烷聚合物; 和溶剂。 在化学式中，R 1选自卤素基团，烷氧基基团，羧基基团等。 R2是蒽基或萘基。 R5是H或碳数为1〜6的烷基。
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