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公开(公告)号：KR101767083B1
公开(公告)日：2017-08-10
申请号：KR1020130133605
申请日：2013-11-05
Applicant: 제일모직주식회사
Inventor： 송현지 , 박은수 , 임상학 , 곽택수 , 김고은 , 김미영 , 김보선 , 김봉환 , 나융희 , 배진희 , 서진우 , 윤희찬 , 이한송 , 전종대 , 한권우 , 홍승희 , 황병규
CPC classification number: C08G77/54 , C08G77/60 , C08G77/62 , C09D183/02 , C09D183/14 , C09D183/16 , H01B3/02 , H01B3/303 , H01B3/46 , H01L21/02164 , H01L21/02211 , H01L21/02222 , H01L21/02255 , H01L21/0229 , H01L21/02326
Abstract: 수소화폴리실록사잔에폴리실란, 폴리사이클로실란및 실란올리고머로이루어진군에서선택되는실란화합물을반응시켜제조되는개질수소화폴리실록사잔을제공한다. 상기개질수소화폴리실록사잔은, 실리콘원자에대한질소원자의몰비가작기때문에실리카계절연층형성용조성물에적용되어실리카계절연층형성시막 수축률을현저히감소시킬수 있다.
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2.发明授权
公开(公告)号：KR101443758B1
公开(公告)日：2014-09-26
申请号：KR1020110107657
申请日：2011-10-20
Applicant: 제일모직주식회사
IPC: C08L83/04 , C09D183/04 , C08G77/04
Abstract: 수소화 폴리실라잔, 수소화 폴리실록사잔 및 이들의 조합에서 선택되는 하나를 포함하고, 폴리스티렌 환산 중량평균 분자량 50,000 이상의 수소화 폴리실라잔 및 수소화 폴리실록사잔의 합의 농도가 0.1% 이하인 실리카층 형성용 조성물이 제공된다.
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公开(公告)号：KR101432606B1
公开(公告)日：2014-08-21
申请号：KR1020110070672
申请日：2011-07-15
Applicant: 제일모직주식회사
IPC: H01L21/8242 , H01L27/108 , H01L21/318
CPC classification number: C08G77/62 , C01B21/087 , H01L28/90
Abstract: 하기 화학식 1로 표시되는 화합물을 포함하는 갭필용 충전제를 제공한다.
[화학식 1]
Si
a N
b O
c H
d
(상기 화학식 1에서,
1.96＜a＜2.68이고,
1.78＜b＜3.21이고,
0≤c＜0.19이며,
4＜d＜10이다.)-
公开(公告)号：KR1020140086727A
公开(公告)日：2014-07-08
申请号：KR1020120157567
申请日：2012-12-28
Applicant: 제일모직주식회사
IPC: H01L21/3065 , H01L21/027
CPC classification number: H01L21/3065 , H01L21/0273 , H04B1/40
Abstract: (a) 기판위에재료층을제공하는단계; (b) 상기재료층위에유기물로이루어진제1 레지스트하층막을형성하는단계; (c) 상기제1 레지스트하층막위에실리콘계레지스트하층막용조성물을스핀-온-코팅하여제2 레지스트하층막을형성하는단계; (d) 상기제2 레지스트하층막위에캡핑층(capping layer)을형성하는단계; (e) 상기캡핑층 위에방사선-민감성이미지화층을형성하는단계; (f) 상기방사선-민감성이미지화층을패턴방식으로방사선에노출시킴으로써상기방사선-민감성이미지화층 내에서방사선-노출된영역의패턴을생성시키는단계; (g) 상기방사선-민감성이미지화층 및상기제 2 레지스트하층막의부분을선택적으로제거하여상기제 1 레지스트하층막의부분을노출시키는단계; (h) 패턴화된제 2 레지스트하층막및 상기제 1 레지스트하층막의부분을선택적으로제거하여재료층의부분을노출시키는단계; (i) 제 1 레지스트하층막을마스크로하여재료층의노출된부분을에칭함으로써패턴화된재료형상을형성시키는단계; 및 (j) 잔존하는상기방사선-민감성이미지화층을제거하는단계를포함하는반도체집적회로디바이스의제조방법을제공한다.
Abstract translation: 一种制造半导体集成电路器件的方法包括以下步骤：（a）在衬底上提供材料层; （b）在所述材料层上形成由有机材料制成的第一抗蚀剂下膜; （c）通过在第一抗蚀剂下膜上旋涂硅基抗蚀剂下膜组合物来形成第二抗蚀剂下膜; （d）在第二抗蚀剂下膜上形成覆盖层; （e）在覆盖层上形成辐射敏感成像层; （f）根据图案化方法通过将辐射敏感成像层暴露于辐射来在辐射敏感成像层中产生辐射曝光区域图案; （g）通过选择性地去除所述辐射敏感成像层和所述第二抗蚀剂下膜的一部分来暴露所述第一抗蚀剂下膜的一部分; （h）通过选择性地去除所述图案化的第二抗蚀剂下膜和所述第一抗蚀剂下膜的一部分来暴露所述材料层的一部分; （i）通过使用第一抗蚀剂下膜作为掩模蚀刻材料层的暴露部分来形成图案化材料形状; 和（j）去除剩余的辐射敏感成像层。
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公开(公告)号：KR101400184B1
公开(公告)日：2014-05-27
申请号：KR1020110092241
申请日：2011-09-09
Applicant: 제일모직주식회사
Abstract: 케톤계 용매, 에테르계 용매, 에스테르계 용매 및 이들의 조합으로 이루어진 군에서 선택되는 제1 용매; 및 테르핀(terpene, isoprenoid)계 용매 및 이들의 조합으로 이루어진 군에서 선택되고, 알코올기를 갖지 않는 제2 용매를 포함하는 수소화폴리실록사잔 박막용 린스액을 제공한다.
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Patent Agency Ranking
公开(公告)号：KR100909384B1
公开(公告)日：2009-07-24
申请号：KR1020060057559
申请日：2006-06-26
Applicant: 제일모직주식회사
IPC: G03F7/075
Abstract: A hardmask composition for an underlying layer of photoresist is provided to be superior in film characteristics, storage stability, and hardmask characteristics, and to transfer a good pattern to a material layer. A hardmask composition for an underlying layer of photoresist comprises: an organosilane-based polymer produced from compounds represented by the formula 1 of [RO]3Si-[CH2]nPh, the formula 2 of [RO]3Si-H, and the formula 3 of [RO]3Si-CH3 in the presence of an acid catalyst; an organic base or a derivative thereof; and a solvent. In the formula 1, Ph is phenyl, n is 0-2, and R is methyl or ethyl. In the formula 2, R is methyl or ethyl. In the formula 3, R is methyl or ethyl.
Abstract translation: 提供用于光致抗蚀剂下层的硬掩模组合物，以在膜特性，储存稳定性和硬掩模特性方面优异，并且将良好图案转移到材料层。 用于光刻胶下层的硬掩模组合物包含：由[RO] 3 Si- [CH 2] n Ph的式1表示的化合物，[RO] 3 Si -H的式2和式3表示的化合物制备的基于有机硅烷的聚合物 [RO] 3 Si-CH 3在酸催化剂存在下的反应; 有机碱或其衍生物; 和溶剂。 在式1中，Ph是苯基，n是0-2，并且R是甲基或乙基。 在式2中，R是甲基或乙基。 在式3中，R是甲基或乙基。
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7.发明公开
公开(公告)号：KR1020090077618A
公开(公告)日：2009-07-15
申请号：KR1020080003676
申请日：2008-01-11
Applicant: 제일모직주식회사
IPC: G03F7/11
CPC classification number: H01L21/31144 , C08G77/16 , C08G77/50 , C08G77/52 , C08G77/70 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/0332 , H01L21/3081 , H01L21/3122 , H01L21/32139
Abstract: A silicone-based hard mask composition, and the hard mask formed by using the composition are provided to improve the etching to a O2 plasma gas. A silicone-based hard mask composition comprises an organosilane-based polymer represented by (SiO1.5-Y-SiO1.5)x(R3SiO1.5)y(XSiO1.5)z(OH)e(OR6)f, and a solvent, wherein 0.05
Abstract translation: 提供硅酮类硬掩模组合物和通过使用该组合物形成的硬掩模，以改善对O 2等离子体气体的蚀刻。 硅氧烷类硬掩模组合物包含由（SiO 1.5-Y-SiO 1.5）x（R 3 SiO 1.5）y（XSiO 1.5）z（OH）e（OR 6）f表示的有机硅烷类聚合物，和 溶剂，其中0.05 <= x，y <= 0.9,0 <= z <= 0.9，x + y + z = 1，0.03 <= e <= 0.2,0.03 = = = X是含有取代或未取代的芳环的碳数6〜30的官能团; R3独立地为碳数1〜6的烷基; R6为碳数1〜6的烷基。
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公开(公告)号：KR100792045B1
公开(公告)日：2008-01-04
申请号：KR1020060075842
申请日：2006-08-10
Applicant: 제일모직주식회사
IPC: H01L21/027 , H01L21/32
CPC classification number: H01L21/31144 , C08G77/04 , C09D183/04 , H01L21/0276 , G03F7/11 , G03F7/092 , G03F7/115 , H01L21/0271 , H01L21/0273
Abstract: A hard mask composition under a resist layer is provided to control the quantity of an alkoxy group of a final polycondensation material by adjusting the quantity of introduced water in a hydrolysis process of a compound. An organic silane-based polymerization material has an alkoxy group generated from a compound designated by the following chemical formula 1 or an alkoxy group generated from compounds designated by the following chemical formulas 1 and 2. A hard mask composition includes the organic silane-based polymerization material and a solvent. The organic silane-based polymerization material is a polycondensation material of a hydrolytic material designated by the following chemical formula 3 that is obtained from the compound designated by the following chemical formula 1, or a polycondensation material of a hydrolytic material designated by the following chemical formulas 3 and 4 that are respectively obtained from the compounds designated by the following chemical formulas 1 and 2. Chemical formula 1 is [RO]3Si-R' wherein R is methyl or ethyl and R' is substitution or non-substitution alkyl of a ring or non-ring shape. Chemical formula 2 is [RO]3Si-Ar wherein R is methyl or ethyl and Ar is a functional group including an aromatic ring. Chemical formula 3 is R'Si[OR]n[OH]3-n wherein R is methyl or ethyl, R' is substitution or non-substitution alkyl of a ring or non-ring shape, and n is 0-3. Chemical formula 4 is ArSi[OR]n[OH]3-n wherein R is methyl or ethyl, Ar is a functional group including an aromatic ring, and n is 0-3.
Abstract translation: 提供抗蚀剂层下的硬掩模组合物，以通过在化合物的水解过程中调节引入的水量来控制最终缩聚材料的烷氧基的量。 有机硅烷类聚合材料具有由以下化学式1表示的化合物或由下列化学式1和2表示的化合物产生的烷氧基产生的烷氧基。硬掩模组合物包括有机硅烷基聚合 材料和溶剂。 有机硅烷类聚合材料是由以下化学式1表示的化合物得到的由以下化学式3表示的水解物质的缩聚物或由以下化学式表示的水解物质的缩聚物 化学式1是[RO] 3 Si-R'，其中R是甲基或乙基，R'是环的取代或非取代烷基 或非环形。 化学式2是[RO] 3 Si-Ar，其中R是甲基或乙基，Ar是包括芳香环的官能团。 化学式3是R'Si [OR] n [OH] 3-n，其中R是甲基或乙基，R'是环或非环形的取代或非取代烷基，n是0-3。 化学式4是ArSi [OR] n [OH] 3-n，其中R是甲基或乙基，Ar是包括芳环的官能团，n是0-3。
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公开(公告)号：KR100760522B1
公开(公告)日：2007-10-04
申请号：KR1020060094967
申请日：2006-09-28
Applicant: 제일모직주식회사
CPC classification number: G03F7/11 , C08G77/04 , G03F7/0752 , G03F7/091 , G03F7/0757
Abstract: An organosilane-based polymer, a hard mask composition for a resist under layer containing the polymer, a method for preparing a semiconductor integrated circuit device by using the composition, and a semiconductor integrated circuit device prepared by the method are provided to improve storage stability without the deterioration of etching resistance, etch selectivity, etch profile and optical properties. An organosilane-based polymer is prepared by reacting the product by the polycondensation of the hydrolyzates generated from the compounds represented by [RO]3Si-Ar, [RO]3Si-H and [RO]3Si-R' in the presence of an acid catalyst, and a compound represented by CH2CHOCH2CH3, wherein R is a methyl group or an ethyl group; Ar is a functional group containing an aromatic group; and R' is a substituted or unsubstituted cyclic or acyclic alkyl group. Preferably the product prepared by polycondensation is a compound represented by the formula 8, wherein Ar is a functional group containing an aromatic group; R' is a substituted or unsubstituted cyclic or acyclic alkyl group; x+y+z=4; 0.04
Abstract translation: 有机硅烷类聚合物，含有聚合物的抗蚀剂下层的硬掩模组合物，通过使用该组合物制备半导体集成电路器件的方法以及通过该方法制备的半导体集成电路器件被提供以提高存储稳定性，而不会 蚀刻电阻的劣化，蚀刻选择性，蚀刻轮廓和光学性质。 通过使由[RO] 3 Si-Ar，[RO] 3 Si-H和[RO] 3 Si-R'表示的化合物生成的水解产物在酸存在下缩聚制备有机硅烷系聚合物 催化剂和由CH 2 CHOCH 2 CH 3表示的化合物，其中R是甲基或乙基; Ar是含有芳基的官能团; 且R'为取代或未取代的环状或非环状烷基。 优选通过缩聚制备的产物是由式8表示的化合物，其中Ar是含有芳基的官能团; R'是取代或未取代的环状或非环状烷基; X + Y + Z = 4; 0.04 <= X <= 0.80; 0 <= Y <= 1.40; 1.80 <= Z <= 3.96; 3 <= N <= 500。
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