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公开(公告)号：KR101155164B1
公开(公告)日：2012-06-12
申请号：KR1020100035725
申请日：2010-04-19
Applicant: 충남대학교산학협력단
IPC: G01N27/00 , G01N27/12 , G01N27/407 , B82B3/00
Abstract: 본 발명은 키토산-폴리아닐린 복합체를 이용한 가스센서 및 그의 제조방법에 관한 것으로, 상기 제조방법에 따른 가스센스는 나노파이버 형태의 나노 구조체를 제조하여 이용함으로써 기존의 막 형태의 전도성 고분자 가스센서에 비해 가스 센서의 감도를 향상 시킬 수 있을 뿐 아니라 키토산 코팅층이 표면에 형성된 나노 구조체를 포함하는 감지체를 구비함으로써 키토산 고분자의 사슬간 및 사슬내의 간격에 따라 다양한 종류의 분자 크기를 갖는 특정 가스 분자를 선택적으로 검출할 수 있는 장점이 있다.
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公开(公告)号：KR100903857B1
公开(公告)日：2009-06-24
申请号：KR1020070122007
申请日：2007-11-28
Applicant: 충남대학교산학협력단
CPC classification number: H01J1/304 , B82B3/0066 , B82Y40/00 , C01B32/158 , C01B2202/08 , H01J9/025 , H01J2201/30469
Abstract: A method for manufacturing carbon nanotubes for field emission devices and carbon nanotubes for field emission device obtained from this method are provided to simplify the manufacturing process by adhering the carbon nanotube on the substrate by using an arc discharging. The arc discharging is performed on a substrate in an arc discharge chamber. The carbon nanotube is arranged on the substrate by the arc discharging. Here, impurities of the carbon nanotube are strongly combined to the wall and end part. The substrate is processed in an organic solvent and the carbon nanotube is horizontally arranged. The substrate is heat-treated, the organic solvent is removed and the impurity is exposed. The carbon nanotube is perpendicularly arranged on the substrate.
Abstract translation: 提供了一种用于场致发射器件的碳纳米管的制造方法和从该方法获得的用于场发射器件的碳纳米管，以通过使用电弧放电将碳纳米管粘附在衬底上来简化制造过程。 在电弧放电室中的基板上进行电弧放电。 碳纳米管通过电弧放电配置在基板上。 这里，碳纳米管的杂质与壁和端部牢固结合。 将基板在有机溶剂中进行处理，并且水平布置碳纳米管。 将基底进行热处理，除去有机溶剂并使杂质暴露。 碳纳米管垂直布置在基板上。
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3.发明授权
公开(公告)号：KR101375590B1
公开(公告)日：2014-03-17
申请号：KR1020130095734
申请日：2013-08-13
Applicant: 충남대학교산학협력단
CPC classification number: G01N27/3272 , C01B32/16 , G01N27/3278 , G01N33/5438 , G01N33/66 , H01L51/0048
Abstract: The present invention relates to a method for preparing a metal oxide-carbon nanotube composite and a working electrode for a nonenzymatic glucose biosensor using the metal oxide-carbon nanotube composite prepared by the same method, wherein the method includes (A) a step of preparing a source comprising a mixture of graphite and a metal oxide precursor, (B) a step of manufacturing a metal-carbon nanotube composite through an arc discharge method using the source, and (C) a step of manufacturing a metal oxide-carbon nanotube composite by thermally treating the metal-carbon nanotube composite. [Reference numerals] (AA) Example 1; (BB) Comparative example 2; (CC,FF) Comparative example 1; (DD) Example 2; (EE) Comparative example 3
Abstract translation: 本发明涉及一种制备金属氧化物 - 碳纳米管复合物的方法和使用通过相同方法制备的金属氧化物 - 碳纳米管复合材料的非酶葡萄糖生物传感器的工作电极，其中该方法包括（A）制备 包括石墨和金属氧化物前体的混合物的源，（B）使用该源通过电弧放电法制造金属 - 碳纳米管复合物的步骤，和（C）制造金属氧化物 - 碳纳米管复合材料的步骤 通过热处理金属 - 碳纳米管复合材料。 （标号）（AA）实施例1; （BB）比较例2; （CC，FF）比较例1; （DD）实施例2; （EE）比较例3
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公开(公告)号：KR1020080006815A
公开(公告)日：2008-01-17
申请号：KR1020060066017
申请日：2006-07-13
Applicant: 충남대학교산학협력단
Inventor： 김도진
CPC classification number: H01J1/30 , B82Y40/00 , C01B32/16 , C01B2202/34 , C01B2202/36
Abstract: A method for preparing a triode type carbon nano tube for field emission device is provided to prevent leakage current by forming an electrical insulating state between a grown carbon nano-tube and a gate electrode. An AAO(Anodic Aluminum Oxide) is grown on an Si substrate. A shadow layer is selectively deposited on the AAO. Micro-pores are partially exposed by shadowing partially the AAO. A carbon nano-tube is grown in a non-shadow space by using a thermally chemical vapor phase-synthesis method or a plasma chemical vapor phase-synthesis method. A first insulating layer is deposited on the substrate. A gate electrode layer is deposited only on the first insulating layer having the shadow layer. A second insulating layer is deposited on the gate electrode layer. The carbon nano-tube is formed by performing a selective etch process using a chemical or physical etch method.
Abstract translation: 提供一种用于场致发射器件的三极管型碳纳米管的制备方法，用于通过在生长的碳纳米管和栅电极之间形成电绝缘状态来防止漏电流。 在Si衬底上生长AAO（阳极氧化铝）。 阴影层选择性地沉积在AAO上。 微孔部分暴露在部分曝光的AAO。 通过使用热化学气相合成法或等离子体化学气相合成法，在非阴影空间中生长碳纳米管。 第一绝缘层沉积在衬底上。 栅电极层仅沉积在具有阴影层的第一绝缘层上。 第二绝缘层沉积在栅电极层上。 通过使用化学或物理蚀刻方法进行选择性蚀刻工艺来形成碳纳米管。
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公开(公告)号：KR1020030093666A
公开(公告)日：2003-12-11
申请号：KR1020020031444
申请日：2002-06-04
Applicant: 충남대학교산학협력단
Abstract: PURPOSE: A method for synthesizing a carbon nano-tube using ferrofluid is provided to reduce the manufacturing cost, to obtain the uniform carbon nano-tubes having the same quality, and to improve the product quality and productivity. CONSTITUTION: The method for synthesizing a carbon nano-tube by thermo-chemical vapor deposition using a ferrofluid is characterized by comprising the steps of: forming a metal catalyst using a ferrofluid; coating the metal catalyst on a substrate; and synthesizing the carbon nano-tube. The method has no need of a heat treatment step as a pre-treatment. More particularly, the step of forming a metal catalyst optionally further comprises the step of introducing a binder into the metal catalyst. Further, the ferrofluid is made from iron chlorides.
Abstract translation: 目的：提供使用铁磁流体合成碳纳米管的方法，以降低制造成本，获得具有相同质量的均匀碳纳米管，并提高产品质量和生产率。 构成：使用铁磁流体通过热化学气相沉积合成碳纳米管的方法的特征在于包括以下步骤：使用铁磁流体形成金属催化剂; 将金属催化剂涂覆在基材上; 并合成碳纳米管。 该方法不需要作为预处理的热处理步骤。 更具体地，形成金属催化剂的步骤可选地进一步包括将粘合剂引入金属催化剂的步骤。 此外，铁磁流体由氯化铁制成。
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Patent Agency Ranking
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公开(公告)号：KR1020130085786A
公开(公告)日：2013-07-30
申请号：KR1020120006859
申请日：2012-01-20
Applicant: 충남대학교산학협력단
CPC classification number: B82B3/0038 , B82Y15/00 , B82Y40/00
Abstract: PURPOSE: A production method of nanostructure is provided to efficiently produce a nanostructure with a three dimensional form which has multidirectional property and a high fitness ratio by growing nanorods at a low temperature and atmospheric pressure using a substrate on which spherical particles are arranged. CONSTITUTION: A production method of nanostructure contains the following steps; (a) spherical particles (102) are arrange on a substrate (101); (b) a metal see layer (103) is formed on the spherical particles; (c) a metal oxide layer (104) is formed by treating the substrate, on which the metal seed layer is formed, with heat; and (d) multiple nanorods (105) are grown immersing the substrate, on which the metal oxide layer is formed, into a aqueous growth solution. The spherical particles are removed as the substrate with the metal seed layer is treated with heat. A heat treatment temperature of the substrate with the metal seed layer is 200-600 degree C. The aqueous growth solution is a solution in which metallic salt precursors and a metal ion containment agent are dispersed in a solvent. A temperature of the aqueous growth solution is 70-100 degreeC. The nanostructure is produced in atmospheric pressure.
Abstract translation: 目的：提供一种纳米结构的制造方法，通过使用配置有球状粒子的基材，通过在低温大气压下生长纳米棒，有效地制造具有多向性和高适应度的三维形状的纳米结构。 构成：纳米结构的制备方法包括以下步骤： （a）球形颗粒（102）布置在基底（101）上; （b）在球形颗粒上形成金属观察层（103） （c）通过用热处理形成有金属种子层的基板来形成金属氧化物层（104）; 并且（d）生长多个纳米棒（105），将其上形成有金属氧化物层的衬底浸入生长水溶液中。 除去金属种子层的球形颗粒作为底物，加热处理。 具有金属种子层的基板的热处理温度为200-600℃。生长水溶液是金属盐前体和金属离子容纳剂分散在溶剂中的溶液。 生长水溶液的温度为70-100℃。 纳米结构在大气压下生产。
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8.发明授权전기전도도 및 광 투과율이 우수한 탄소나노튜브 필름, 및이로부터 얻어진 전자 소자 및 광 투과형 전극 有权具有优异的导电性和光学透明性的碳纳米管膜，以及通过使用其获得的电子器件和光透射型电极
公开(公告)号：KR100987993B1
公开(公告)日：2010-10-18
申请号：KR1020070121984
申请日：2007-11-28
Applicant: 충남대학교산학협력단
Abstract: 본 발명은 탄소나노튜브 필름의 기판간 접합력을 개선시키고 탄소나노튜브 필름내 탄소나노튜브간 전기적 접합 저항을 저감시키는 방법과, 이로부터 얻어진 전기전도도 및 광 투과율이 우수한 탄소나노튜브 필름을 이용하여 전자 소자 및 광 투과형 전극을 제조하는 방법에 관한 것으로, 아크 방전을 이용하여 탄소나노튜브가 흡착된 기판을 제조한 다음 상기 기판상에 유기 용매로 표면처리하여 탄소나노튜브가 수평 배열된 탄소나노튜브 필름을 제작하고, 얻어진 탄소나노튜브 필름을 산화성 가스 분위기 하에 온도를 올려 비정질 탄소 및 탄소나노튜브 이외의 탄소 나노 입자들을 제거하고 산성 용액으로 촉매 금속 입자들을 제거하여 전기전도도 및 광 투과율을 개선시키며, 나아가 포토레지스트 코팅, 노광 고정, SOG 도포, 박막 증착 공정을 통해 전자 소자 제작이 가능하며, 미세 패턴 형태의 전극을 제조하는 것으로 구성되어 있다.
본 발명의 방법에 따르면, 탄소나노튜브 필름 제작과 함께 탄소나노튜브의 수평 배열을 도입하여 대면적화가 가능할 뿐 아니라 간단하고 저렴한 방법에 의해 탄소나노튜브 필름의 전기전도도 및 광 투과율을 개선시킬 수 있다. 또한, 이렇게 표면처리된 탄소나노튜브필름은 전자파 차폐, 전기화학적 저장장치(2차 전지, 연료 전지 또는 수퍼 캐패시터)의 전극, 광 투과형 전극뿐만 아니라, 탄소나노튜브 트랜지스터, 센서 소자 및 유무기 오염원에 대한 선택적 흡착 성능을 발휘할 수 있는 필터에 사용될 수 있다.
탄소나노튜브 필름, 수평 배열, 유기용매, 전기전도도, 광 투과율-
9.发明公开
公开(公告)号：KR1020080006814A
公开(公告)日：2008-01-17
申请号：KR1020060066016
申请日：2006-07-13
Applicant: 충남대학교산학협력단
Inventor： 김도진
CPC classification number: H01J1/304 , B82Y40/00 , H01J9/025 , H01J2201/30469
Abstract: A method for manufacturing a carbon nano-tube field emission device by using electro-deposition and a carbon nano-tube field emission device manufactured thereby are provided to enhance electrical/mechanical coherence between a carbon nano-tube and a metal electrode by growing a carbon nano-tube/metal composite on a metal electrode. A carbon nano-tube dispersion process is performed to disperse a carbon nano-tube into a metallic electrolyte of an electroplating device. A growing process is performed to couple the carbon nano-tube and metallic particles in order to grow a carbon nano-tube/metal composite on the metal electrode by applying current to a metal electrode and a relative electrode of the electroplating device. A carbon nano-tube forming process is performed to form the carbon nano-tube by etching chemically the carbon nano-tube/metal composite grown on the metal electrode.
Abstract translation: 提供一种通过使用电沉积制造碳纳米管场致发射器件的方法和由其制造的碳纳米管场发射器件，以通过生长碳以增强碳纳米管和金属电极之间的电/机械相干性 纳米管/金属复合材料在金属电极上。 进行碳纳米管分散工艺以将碳纳米管分散到电镀装置的金属电解质中。 进行生长过程以连接碳纳米管和金属颗粒，以通过向电镀装置的金属电极和相对电极施加电流而在金属电极上生长碳纳米管/金属复合材料。 通过在金属电极上生长的碳纳米管/金属复合材料进行化学蚀刻来进行碳纳米管形成工艺以形成碳纳米管。
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公开(公告)号：KR1020080006813A
公开(公告)日：2008-01-17
申请号：KR1020060066015
申请日：2006-07-13
Applicant: 충남대학교산학협력단
Inventor： 김도진
CPC classification number: C01B32/164 , B82B3/00 , B82Y40/00
Abstract: A method for synthesizing carbon nanotubes is provided to synthesize continuously carbon nanotubes without lowering temperature of a synthesis furnace during the deposition by dissolving ferrocene or thiophene as a catalytic metal into an n-hexane solvent as a carbon atom source using a thermochemical vapor deposition process. A method for synthesizing carbon nanotubes comprises: mixing a catalytic metal source such as ferrocene(Fe(C2H2)5) or thiophene with an organic solvent such as n-hexane, acetone or methanol to prepare a mixed solution of a catalytic metal and hydrocarbon; and injecting the mixed solution into a supply source of a carbon nanotube synthesizing apparatus and growing carbon nanotubes while maintaining temperature inside a reactor to 900 deg.C. A method for synthesizing carbon nanotubes comprises: mixing NiSO4.6H2O, FeSO4.6H2O, NiCl2.4H2O, FeCl2.4H2O or thiophene with an organic solvent such as ethanol to prepare a mixed solution of a catalytic metal and hydrocarbon; and injecting the mixed solution into a supply source of a carbon nanotube synthesizing apparatus and growing carbon nanotubes while maintaining temperature inside a reactor to 1200 deg.C to prepare carbon nanotubes.
Abstract translation: 提供合成碳纳米管的方法，通过使用热化学气相沉积法将作为催化金属的二茂铁或噻吩溶解在作为碳原子源的正己烷溶剂中，不沉淀合成炉的温度而不降低合成炉的温度。 合成碳纳米管的方法包括：将二茂铁（Fe（C 2 H 2）5）或噻吩等催化金属源与正己烷，丙酮或甲醇等有机溶剂混合，制备催化金属与烃的混合溶液; 并将混合溶液注入到碳纳米管合成装置的供给源中，并在将反应器内的温度保持在900℃的同时生长碳纳米管。 合成碳纳米管的方法包括：将NiSO 4·6H 2 O，FeSO 4·6H 2 O，NiCl 2·4H 2 O，FeCl 4·4H 2 O或噻吩与有机溶剂如乙醇混合，制备催化金属和烃的混合溶液; 并将混合溶液注入碳纳米管合成装置的供应源中并在将反应器内的温度保持在1200℃的同时生长碳纳米管，以制备碳纳米管。
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