公开(公告)号：KR101400723B1

公开(公告)日：2014-05-30

申请号：KR1020130021855

申请日：2013-02-28

Applicant: 성균관대학교산학협력단 ,  포항공과대학교 산학협력단

Inventor： 염근영 ,  임규욱 ,  임종태 ,  이경재 ,  정석민 ,  강태희 ,  박진우 ,  오종식 ,  김성희 ,  양미현

IPC: G03F7/00 ,  H01L21/027 ,  B29C59/02

CPC classification number: C01B32/20 ,  B29C59/02 ,  G03F7/0002 ,  G03F7/0037 ,  H01L21/0273

Abstract: The present invention relates to a method for patterning graphene, and more specifically, to a method for patterning graphene comprising the steps of forming an oxide layer on a substrate; forming metal patterns on the oxide layer; transferring graphene onto the oxide layer and the metal patterns; and forming graphene patterns by removing graphene from the metal patterns by applying heat to the graphene and vaporizing the graphene.

Abstract translation: 本发明涉及图案化石墨烯的方法，更具体地说，涉及石墨烯图案的方法，包括在基底上形成氧化物层的步骤; 在氧化物层上形成金属图案; 将石墨烯转移到氧化物层和金属图案上; 以及通过向石墨烯施加热并使石墨烯汽化而从金属图案中除去石墨烯来形成石墨烯图案。

公开(公告)号：KR101377170B1

公开(公告)日：2014-03-27

申请号：KR1020130015577

申请日：2013-02-13

Applicant: 포항공과대학교 산학협력단

Inventor： 이경재 ,  임규욱 ,  강태희 ,  정석민 ,  양미현

IPC: H01L21/31 ,  H01L21/324

CPC classification number: H01L21/324 ,  H01L21/02381 ,  H01L21/02472 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02527

Abstract: The present invention relates to a method of removing a silicon oxide layer and a laminated structure. According to the present invention, the method of removing a silicon oxide layer includes a step of forming a silicon layer; a step of forming a metal layer after a silicon oxide layer on the silicon layer; a step of forming a carbon layer on the metal layer; a step of removing at least one part of the silicon oxide layer by combining the carbon of the carbon layer with the oxide of the silicon oxide layer by heating the carbon layer, the metal layer, and the silicon oxide layer.

Abstract translation: 本发明涉及去除氧化硅层和叠层结构的方法。 根据本发明，除去硅氧化物层的方法包括形成硅层的步骤; 在硅层上形成氧化硅层之后的金属层的工序; 在所述金属层上形成碳层的步骤; 通过加热碳层，金属层和氧化硅层，通过将碳层的碳与氧化硅层的氧化物组合来除去至少一部分氧化硅层的步骤。