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公开(公告)号：KR1020030087309A
公开(公告)日：2003-11-14
申请号：KR1020020025317
申请日：2002-05-08
Applicant: 한국과학기술연구원
IPC: G11B5/187
CPC classification number: G11B5/00 , G11B5/1871 , G11B5/23 , G11B5/3183 , G11B2005/0002 , G11B2005/0005 , G11B2005/001 , G11B2005/0013 , Y10T29/49036 , Y10T29/49041
Abstract: PURPOSE: A method for optimizing characteristics of a planner type recording head for super high density magnetic recording is provided to record information on a medium having high magnetocrystalline anisotropy by realizing a high recording magnetic field. CONSTITUTION: A characteristic of a recording head is optimized by changing shape parameters of the recording head by first, second, and third head-trimming methods having predetermined parts of the recording head as shapes and sizes of a, b, and c. In the first head-trimming method, b and c are fixed as predetermined values, and only a is changed, so that a head-trimming part has a step-like shape. In the second head-trimming method, a and c are fixed as predetermined values, and b becomes smaller, so that the characteristic of the head has a similar shape to the shape of the first head-trimming method. In the third head-trimming method, b and c are fixed as predetermined values, only a is changed, so that the characteristic of the head has a similar shape to the shape of the first head-trimming method.
Abstract translation: 目的：提供一种用于优化用于超高密度磁记录的计划型记录头的特性的方法，通过实现高记录磁场来记录具有高磁晶各向异性的介质的信息。 构成：通过用记录头的预定部分作为a，b和c的形状和尺寸的第一，第二和第三头部修剪方法改变记录头的形状参数来优化记录头的特性。 在第一校正方法中，b和c被固定为预定值，只有a被改变，使得头部修剪部分具有阶梯状形状。 在第二头部修剪方法中，a和c被固定为预定值，并且b变小，使得头部的特性与第一头部修剪方法的形状具有相似的形状。 在第三头部修剪方法中，b和c被固定为预定值，仅a改变，使得头部的特性与第一头部修剪方法的形状具有相似的形状。
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公开(公告)号：KR100462791B1
公开(公告)日：2004-12-20
申请号：KR1020010075409
申请日：2001-11-30
Applicant: 한국과학기술연구원
IPC: G11C11/15
Abstract: PURPOSE: A method for manufacturing a wordline having a keeper layer capable of applying to a magnetic memory and a sensor is provided to supply a magnetic layer mainly constituted of Co serving as a magnetic field keeper and having an excellent characteristics as a barrier layer. CONSTITUTION: A method for manufacturing a wordline having a keeper layer capable of applying to a magnetic memory and a sensor includes the steps of: forming an insulating layer(102) on a semiconductor substrate(100), forming a trench in the insulating layer(102) at a predetermined depth by using photolithography method, coating a magnetic keeper layer(106) on the inner and exterior surface of the trench by using a physical vapor deposition method, depositing seed layer made of copper(Cu) on the entire surface of the magnetic keeper layer(106), depositing a conducting layer(110) made of Cu at a predetermined thickness so as to cover the trench(104) formed on the top of the seed layer by using an electroplating method and planarizing the conducting layer(110) by using a chemical mechanical polishing(CMP) method until the top surface of the insulating layer is exposed.
Abstract translation: 目的：提供一种用于制造具有能够应用于磁存储器和传感器的保持层的字线的方法，以提供主要由作为磁场保持器的Co构成并具有优异特性的磁层作为阻挡层。 用于制造具有能够施加到磁存储器和传感器的保持层的字线的方法包括以下步骤：在半导体衬底（100）上形成绝缘层（102）;在绝缘层（100）中形成沟槽 使用光刻法，在沟槽的内外表面上涂布磁性保持层（106），在其整个表面上沉积由铜（Cu）制成的晶种层 磁性保持层（106），以预定厚度沉积由Cu制成的导电层（110），以便通过使用电镀方法覆盖形成在晶种层顶部上的沟槽（104），并平坦化导电层 110）通过使用化学机械抛光（CMP）方法直到绝缘层的顶表面暴露。
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公开(公告)号：KR100452618B1
公开(公告)日：2004-10-15
申请号：KR1020010072201
申请日：2001-11-20
Applicant: 한국과학기술연구원
IPC: G11C11/15
Abstract: PURPOSE: A magnetic memory and word line making method capable of being applied to sensor are provided to realize a pattern with respect to a wordline/bitline to maximize magnetic field required for converting magnetization. CONSTITUTION: An insulation film(102) is formed on a semiconductor substrate(100), and a trench of a predetermined depth is formed by using the insulation film. A seed film(106) is deposited on an entire surface of the trench. A conductive film(108) of a copper material is coated on the seed film so as to cover the trench sufficiently. A CMP process is performed until an upper surface of the insulation film is exposed.
Abstract translation: 目的：提供一种能够应用于传感器的磁存储器和字线制造方法，以实现相对于字线/位线的图案，以最大化转换磁化所需的磁场。 构成：在半导体衬底（100）上形成绝缘膜（102），通过使用绝缘膜形成预定深度的沟槽。 籽晶膜（106）沉积在沟槽的整个表面上。 在籽晶膜上涂覆铜材料的导电膜（108）以充分覆盖沟槽。 执行CMP工艺直到绝缘膜的上表面暴露。
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公开(公告)号：KR1020030044596A
公开(公告)日：2003-06-09
申请号：KR1020010075409
申请日：2001-11-30
Applicant: 한국과학기술연구원
IPC: G11C11/15
Abstract: PURPOSE: A method for manufacturing a wordline having a keeper layer capable of applying to a magnetic memory and a sensor is provided to supply a magnetic layer mainly constituted of Co serving as a magnetic field keeper and having an excellent characteristics as a barrier layer. CONSTITUTION: A method for manufacturing a wordline having a keeper layer capable of applying to a magnetic memory and a sensor includes the steps of: forming an insulating layer(102) on a semiconductor substrate(100), forming a trench in the insulating layer(102) at a predetermined depth by using photolithography method, coating a magnetic keeper layer(106) on the inner and exterior surface of the trench by using a physical vapor deposition method, depositing seed layer made of copper(Cu) on the entire surface of the magnetic keeper layer(106), depositing a conducting layer(110) made of Cu at a predetermined thickness so as to cover the trench(104) formed on the top of the seed layer by using an electroplating method and planarizing the conducting layer(110) by using a chemical mechanical polishing(CMP) method until the top surface of the insulating layer is exposed.
Abstract translation: 目的：提供一种具有能够施加到磁存储器和传感器的保持层的字线的制造方法，以提供主要由作为磁场保持器的Co构成的磁性层，并且具有优异的阻挡层特性。 构成：用于制造具有能够施加到磁存储器和传感器的保持层的字线的方法包括以下步骤：在半导体衬底（100）上形成绝缘层（102），在绝缘层中形成沟槽 102），通过使用光刻法在预定深度处，通过使用物理气相沉积法在沟槽的内表面和外表面上涂覆磁保持层（106），在铜的整个表面上沉积由铜（Cu）制成的种子层 磁性保持层（106），以预定厚度沉积由Cu制成的导电层（110），以便通过使用电镀方法覆盖形成在种子层顶部上的沟槽（104）并使导电层平坦化（ 110）通过使用化学机械抛光（CMP）方法直到暴露绝缘层的顶表面。
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公开(公告)号：KR1020170038457A
公开(公告)日：2017-04-07
申请号：KR1020150137857
申请日：2015-09-30
Applicant: 한국전력공사 , 한국남부발전 주식회사 , 한국과학기술연구원
CPC classification number: Y02P70/56
Abstract: 본발명의일 구현예는탄소계지지체에질소(N)를도핑하여질소-탄소담체를제조하는단계; 및상기질소-탄소담체상에팔라듐(Pd) 나노입자를담지하여담지촉매를제조하는단계; 를포함하는포름산탈수소화촉매제조방법및 이와같은방법으로제조된포름산탈수소화촉매에관한것이다. 이를통해, 본발명은저온에서의활성이우수하고, 전환빈도(TOF, Trunover Frequency)가높으면서도, 촉매안정성이우수하고, 대량생산이가능하며, 반응혼합물과의분리가용이한포름산탈수소화촉매및 이의제조방법을제공할수 있다.
Abstract translation: 本发明的一个实施方式是一种制造氮碳载体的方法，包括：通过在碳载体上掺杂氮（N）制备氮 - 碳载体; 并在氮 - 碳载体上负载钯（Pd）纳米颗粒以形成负载型催化剂; 本发明涉及制备包含式（I）化合物的甲酸脱氢催化剂的方法 通过这一点，本发明是活性eseoui冷yiwoosu，并且开关频率（TOF，Trunover频率）是nopeumyeonseo图，催化剂稳定性yiwoosu，和大规模生产是可能的，并且易于甲酸脱氢催化剂，并产生从该反应混合物中的分离 可以提供方法。
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Patent Agency Ranking
公开(公告)号：KR1020030041417A
公开(公告)日：2003-05-27
申请号：KR1020010072201
申请日：2001-11-20
Applicant: 한국과학기술연구원
IPC: G11C11/15
Abstract: PURPOSE: A magnetic memory and word line making method capable of being applied to sensor are provided to realize a pattern with respect to a wordline/bitline to maximize magnetic field required for converting magnetization. CONSTITUTION: An insulation film(102) is formed on a semiconductor substrate(100), and a trench of a predetermined depth is formed by using the insulation film. A seed film(106) is deposited on an entire surface of the trench. A conductive film(108) of a copper material is coated on the seed film so as to cover the trench sufficiently. A CMP process is performed until an upper surface of the insulation film is exposed.
Abstract translation: 目的：提供能够应用于传感器的磁存储器和字线制作方法，以实现相对于字线/位线的图案，以最大化磁化转化所需的磁场。 构成：在半导体衬底（100）上形成绝缘膜（102），通过使用绝缘膜形成预定深度的沟槽。 种子膜（106）沉积在沟槽的整个表面上。 将铜材料的导电膜（108）涂覆在种皮膜上，以充分覆盖沟槽。 进行CMP处理直到绝缘膜的上表面露出。
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公开(公告)号：KR101814162B1
公开(公告)日：2018-01-02
申请号：KR1020150137857
申请日：2015-09-30
Applicant: 한국전력공사 , 한국남부발전 주식회사 , 한국과학기술연구원
CPC classification number: Y02P70/56
Abstract: 본발명의일 구현예는탄소계지지체에질소(N)를도핑하여질소-탄소담체를제조하는단계; 및상기질소-탄소담체상에팔라듐(Pd) 나노입자를담지하여담지촉매를제조하는단계; 를포함하는포름산탈수소화촉매제조방법및 이와같은방법으로제조된포름산탈수소화촉매에관한것이다. 이를통해, 본발명은저온에서의활성이우수하고, 전환빈도(TOF, Trunover Frequency)가높으면서도, 촉매안정성이우수하고, 대량생산이가능하며, 반응혼합물과의분리가용이한포름산탈수소화촉매및 이의제조방법을제공할수 있다.
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公开(公告)号：KR100460131B1
公开(公告)日：2004-12-03
申请号：KR1020020025317
申请日：2002-05-08
Applicant: 한국과학기술연구원
IPC: G11B5/187
CPC classification number: G11B5/00 , G11B5/1871 , G11B5/23 , G11B5/3183 , G11B2005/0002 , G11B2005/0005 , G11B2005/001 , G11B2005/0013 , Y10T29/49036 , Y10T29/49041
Abstract: The present invention relates to the method of optimizing of planar type write heads for ultra high density magnetic recording. More particularly, the invention relates to a planar type write head for an ultra high density drive which can record information on a medium with high magneto-crystalline anisotropy. One of the most serious problems for high density recording is thermal fluctuation and this problem can be solved by using a medium with high magneto-crystalline anisotropy. However, this requires a write head capable of generating a high write field According to the present invention, the method of optimizing a planar type write head for ultra high density magnetic recording comprises the step of optimizing the characteristics of the write head by changing the shape parameters of the write head using the first, second a0nd third type shape control methods.
Abstract translation: 本发明涉及用于超高密度磁记录的平面型写磁头的优化方法。 更具体地说，本发明涉及一种用于超高密度驱动的平面型写头，其可以在具有高磁 - 晶各向异性的介质上记录信息。 高密度记录最严重的问题之一是热波动，并且这个问题可以通过使用具有高磁 - 晶各向异性的介质来解决。 然而，这需要能够产生高写入场的写入头。根据本发明，优化用于超高密度磁记录的平面型写入头的方法包括通过改变写入头的形状来优化写入头的特性的步骤 写头的参数使用第一，第二和第三类型形状控制方法。
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