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公开(公告)号：KR1020120080815A
公开(公告)日：2012-07-18
申请号：KR1020110002240
申请日：2011-01-10
Applicant: 한국과학기술연구원
CPC classification number: B82B3/0004 , B01J19/121 , B82B3/0028 , B82Y40/00 , C23C14/3485
Abstract: PURPOSE: A nanostructure synthesizer using a target-rotating type hot-walled pulse laser deposition and a method thereof are provided to obtain uniform nanostructures by revolving the target object and irradiating laser thereof. CONSTITUTION: A nanostructure synthesizer using a target-rotating type hot-walled pulse laser deposition comprises a chamber(10), supporting parts(20,30), heaters(40) and a laser generator(50). The chamber accepts a substrate(3) and a target material(2). The supporting parts are located in the inside of the chamber and supports and revolves the target material. The heater is located outside the chamber. The chamber is heated so that the inner temperature of the chamber becomes over 600 deg. Celsius. The laser generator irradiates laser on the target material and decomposes thereof so that the nanostructure is formed on the substrate from the decomposed target material.
Abstract translation: 目的：提供使用目标旋转型热壁脉冲激光沉积的纳米结构合成器及其方法，以通过旋转目标物体并照射其激光来获得均匀的纳米结构。 构成：使用目标旋转型热壁脉冲激光沉积的纳米结构合成器包括室（10），支撑部件（20,30），加热器（40）和激光发生器（50）。 该室接受基板（3）和目标材料（2）。 支撑部件位于腔室的内部并支撑并旋转靶材料。 加热器位于室外。 加热室，使得室的内部温度超过600度。 摄氏度。 激光发生器将激光照射在目标材料上并将其分解，使得纳米结构从分解的靶材形成在基板上。
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公开(公告)号：KR1020110027233A
公开(公告)日：2011-03-16
申请号：KR1020090085229
申请日：2009-09-10
Applicant: 한국과학기술연구원
IPC: H01L21/336 , H01L29/78
CPC classification number: H01L27/088 , H01L21/02225 , H01L21/02603 , H01L29/41725 , H01L29/4232
Abstract: PURPOSE: A field effect transistor including an Ag doped ZnO nano wire and a manufacturing method thereof are provided to obtain high electric property by controlling the doping and composition of a nano wire. CONSTITUTION: A gate insulation layer(12) is formed on a substrate(11). A source electrode(14) and a drain electrode(15) are positioned on the gate insulation layer. The source electrode and the drain electrode include a first layer made of titanium and a second layer made of conductive materials. A nano wire(13) is positioned between the source electrode and the drain electrode. The nano wire includes Ag doped ZnO.
Abstract translation: 目的：提供一种包括Ag掺杂ZnO纳米线的场效应晶体管及其制造方法，以通过控制纳米线的掺杂和组成来获得高电性能。 构成：在基板（11）上形成栅绝缘层（12）。 源电极（14）和漏电极（15）位于栅极绝缘层上。 源电极和漏电极包括由钛制成的第一层和由导电材料制成的第二层。 纳米线（13）位于源电极和漏电极之间。 纳米线包括Ag掺杂的ZnO。
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公开(公告)号：KR101091609B1
公开(公告)日：2011-12-13
申请号：KR1020090050410
申请日：2009-06-08
Applicant: 한국과학기술연구원
Abstract: 실시예들은 나노선, 그 제조 장치 및 방법에 관한 것이다. 나노선은 은 및 III족 원소에 의하여 도핑된 산화아연으로 이루어질 수 있다. 나노선 제조 장치는, 챔버; 상기 챔버 내에 위치하는 기판; 상기 챔버 내에 상기 기판과 인접하여 위치하며 은 및 III족 원소에 의해 도핑된 타겟 물질; 상기 챔버를 가열하는 가열기; 및 상기 타겟 물질에 레이저를 조사하는 레이저 발생기를 포함할 수 있다. 나노선 제조 방법은, 챔버 내에 은 및 III족 원소에 의해 도핑된 타겟 물질 및 기판을 서로 인접하여 위치시키는 단계; 상기 챔버를 가열하는 단계; 및 상기 타겟 물질에 레이저를 조사하여, 상기 기판상에 상기 타겟 물질로 이루어진 나노선을 형성하는 단계를 포함할 수 있다.
나노선, 은, 알루미늄, III족, 코도핑, 산화아연-
Patent Agency Ranking
公开(公告)号：KR101076690B1
公开(公告)日：2011-10-26
申请号：KR1020090085229
申请日：2009-09-10
Applicant: 한국과학기술연구원
IPC: H01L21/336 , H01L29/78
Abstract: 전계효과트랜지스터는, 기판; 상기기판상의게이트절연막; 상기게이트절연막상에서로이격하여위치하는소스전극및 드레인전극; 및상기소스전극및 상기드레인전극사이에위치하며, 은이도핑된산화아연을포함하여이루어지는나노선을포함할수 있다. 전계효과트랜지스터의제조방법은, 제1 기판상에게이트절연막을형성하는단계; 제2 기판상에나노선을형성하는단계; 상기나노선의적어도일부를상기제2 기판으로부터분리하여용액에혼합시키는단계; 상기나노선이혼합된용액을제1 기판에주입하여상기제1 기판상에나노선을위치시키는단계; 및상기제1 기판상에상기나노선을사이에두고서로이격된소스전극및 드레인전극을형성하는단계를포함할수 있다.
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公开(公告)号：KR1020120100536A
公开(公告)日：2012-09-12
申请号：KR1020110019510
申请日：2011-03-04
Applicant: 한국과학기술연구원
IPC: G01N27/407 , G01N27/26 , B82Y15/00
Abstract: PURPOSE: A gas sensor having a silver-doped zinc oxide nano wire and a method for manufacturing the same are provided to differentiate gas sensing sensitivity because a change of electrical properties is induced by doping silver, thereby selectively sensing various harmful gases. CONSTITUTION: A gas sensor comprises a substrate(11), an insulation film(12), azinc oxide nano wire(13), and a plurality of electrodes(14). The insulation film is formed on the substrate. The zinc oxide nano wire is arranged on the insulation film and silver is doped. The electrodes are arranged on the insulation film by being spaced from each other and electrically connected to the nano wire.
Abstract translation: 目的：提供一种具有银掺杂氧化锌纳米线的气体传感器及其制造方法，以区别气体感测灵敏度，因为通过掺杂银诱导电性能的变化，从而选择性地感测各种有害气体。 构成：气体传感器包括基板（11），绝缘膜（12），氧化锌纳米线（13）和多个电极（14）。 绝缘膜形成在基板上。 氧化锌纳米线布置在绝缘膜上，并且掺杂银。 电极通过彼此间隔并且电连接到纳米线布置在绝缘膜上。
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公开(公告)号：KR1020100131691A
公开(公告)日：2010-12-16
申请号：KR1020090050410
申请日：2009-06-08
Applicant: 한국과학기술연구원
CPC classification number: C01G9/02 , B82Y30/00 , B82Y40/00 , C01P2004/16 , C23C16/0263 , H01L21/02603 , H01L21/205
Abstract: PURPOSE: Apparatus and method for fabricating a nanowire co-doped with silver and group III elements are provided to lower activation energy of the nanowire by aluminum co-doped with silver. CONSTITUTION: A nanowire comprises zinc oxide doped with silver and group III elements. An apparatus for fabricating the nanowire includes a chamber(10), a substrate(20) positioned within the chamber, a target material(30) doped with silver and group III elements, a heater(40) heating the chamber, and a laser generator(50) for irradiating laser to the target material.
Abstract translation: 目的：提供与银和III族元素共同掺杂的纳米线的制备装置和方法，以通过与银共同掺杂的铝来降低纳米线的活化能。 构成：纳米线包含掺杂有银和III族元素的氧化锌。 一种用于制造纳米线的装置包括：腔室（10），位于腔室内的衬底（20），掺杂有银和III族元素的靶材料（30），加热室的加热器（40）和激光发生器 （50），用于向目标材料照射激光。
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公开(公告)号：KR1020120019126A
公开(公告)日：2012-03-06
申请号：KR1020100082298
申请日：2010-08-25
Applicant: 한국과학기술연구원
IPC: G01N27/12 , B82B1/00 , G01N27/407
Abstract: PURPOSE: A Ga-doped nano-wire gas sensor and a manufacturing method of the same are provided to be used for the various technical fields in which the gas sensing is necessary. CONSTITUTION: A Ga-doped nano-wire gas sensor comprises a substrate(101), an insulating layer(102), and a nano-wire(103) and a plurality of electrode. The insulating layer is formed in the top of the substrate. The nano-wire is located on surface the insulating layer. The gallium is doped in the nano-wire. A plurality of electrodes is electrically connected to the nano-wire.
Abstract translation: 目的：提供一种Ga掺杂纳米线气体传感器及其制造方法，用于需要气体感测的各种技术领域。 构成：Ga掺杂纳米线气体传感器包括衬底（101），绝缘层（102）和纳米线（103）和多个电极。 绝缘层形成在基板的顶部。 纳米线位于绝缘层的表面上。 镓在纳米线中掺杂。 多个电极电连接到纳米线。
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公开(公告)号：KR1020100131690A
公开(公告)日：2010-12-16
申请号：KR1020090050409
申请日：2009-06-08
Applicant: 한국과학기술연구원
CPC classification number: C01G9/02 , B82Y30/00 , B82Y40/00 , C01P2004/16 , C23C16/0263 , H01L21/02603 , H01L21/205
Abstract: PURPOSE: A silver-doped nanowire with p-type semiconductor characteristic is provided to enable the growth of nano wire by laser irradiation and to control silver content doped on the nano wire by controlling a silver content within a target material. CONSTITUTION: A nano wire comprises silver-doped zinc oxide. A device comprises a substrate and the nano wire including silver-doped zinc oxide which is located on the surface of the substrate. A method for manufacturing silver-doped zinc oxide comprises: positioning the substrate(20) and a target material(30) containing silver-doped zinc oxide within a chamber(10); heating the chamber; and depositing the target material on the substrate in a nano wire(1) shape by irradiating laser to the target material.
Abstract translation: 目的：提供具有p型半导体特性的银掺杂纳米线，以通过激光照射来生长纳米线，并通过控制目标材料中的银含量来控制掺杂在纳米线上的银含量。 构成：纳米线包含掺杂银的氧化锌。 一种器件包括衬底和纳米线，其包括位于衬底表面上的掺银氧化锌。 一种制造掺杂银的氧化锌的方法包括：将衬底（20）和含有掺银氧化锌的靶材料（30）定位在室（10）内; 加热室; 以及通过向所述目标材料照射激光，以纳米线（1）形式将所述靶材料沉积在所述基板上。
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