公开(公告)号：KR100882923B1

公开(公告)日：2009-02-10

申请号：KR1020070126962

申请日：2007-12-07

Applicant: 한국과학기술연구원

Inventor： 박상환 ,  이동윤 ,  한재호 ,  윤성호 ,  조경선

IPC: C04B35/56 ,  C04B35/10 ,  C04B35/645

CPC classification number: C04B35/5607 ,  C04B35/645 ,  C04B2235/3241 ,  C04B2235/3839 ,  C04B2235/402 ,  C04B2235/424 ,  C04B2235/425 ,  C04B2235/5427 ,  C04B2235/5436 ,  C04B2235/6562 ,  C04B2235/6581 ,  C04B2235/77

Abstract: A Cr2AlC sintered body manufacturing method is provided to have excellent heat property, excellent mechanical property, excellent electrical property and excellent machinability property, to raise price competitive power and to be applied to industry part of the Cr2AlC sintered body. A Cr2AlC sintered body manufacturing method comprises steps of: deoxidizing compound powder of the carbon source material powder and Cr2O3 powder at an inert atmosphere or a vacuum atmosphere and at 1000~1500 °C for 30 minutes to 10 hours and manufacturing Cr carbide powder; pressurizing and sintering the compound powder of the manufactured Cr carbide powder and a Al powder at 900~1400 °C and 15~40MPa for 30 minutes to 10 hours under vacuum atmosphere and manufacturing the Cr2AlC sintered body.

Abstract translation: Cr2AlC烧结体的制造方法具有优异的热性能，优异的机械性能，优异的电性能和优异的机械加工性能，以提高价格竞争力并适用于Cr2AlC烧结体的工业部分。 Cr2AlC烧结体的制造方法包括以下步骤：在惰性气氛或真空气氛下，在1000〜1500℃下将碳源材料粉末和Cr 2 O 3粉末的化合物粉末脱氧30分钟〜10小时，制造碳化铬粉末; 在真空气氛下，将制造的碳化铬粉末的复合粉末和900〜1400℃，15〜40MPa的Al粉末加压烧结30分钟〜10小时，制作Cr2AlC烧结体。

公开(公告)号：KR1020120019126A

公开(公告)日：2012-03-06

申请号：KR1020100082298

申请日：2010-08-25

Applicant: 한국과학기술연구원

Inventor： 박동훈 ,  이상렬 ,  이동윤 ,  김경원

IPC: G01N27/12 ,  B82B1/00 ,  G01N27/407

Abstract: PURPOSE: A Ga-doped nano-wire gas sensor and a manufacturing method of the same are provided to be used for the various technical fields in which the gas sensing is necessary. CONSTITUTION: A Ga-doped nano-wire gas sensor comprises a substrate(101), an insulating layer(102), and a nano-wire(103) and a plurality of electrode. The insulating layer is formed in the top of the substrate. The nano-wire is located on surface the insulating layer. The gallium is doped in the nano-wire. A plurality of electrodes is electrically connected to the nano-wire.

Abstract translation: 目的：提供一种Ga掺杂纳米线气体传感器及其制造方法，用于需要气体感测的各种技术领域。 构成：Ga掺杂纳米线气体传感器包括衬底（101），绝缘层（102）和纳米线（103）和多个电极。 绝缘层形成在基板的顶部。 纳米线位于绝缘层的表面上。 镓在纳米线中掺杂。 多个电极电连接到纳米线。