公开(公告)号：KR1020110027233A

公开(公告)日：2011-03-16

申请号：KR1020090085229

申请日：2009-09-10

Applicant: 한국과학기술연구원

Inventor： 이상렬 ,  박동훈 ,  김경원

IPC: H01L21/336 ,  H01L29/78

CPC classification number: H01L27/088 ,  H01L21/02225 ,  H01L21/02603 ,  H01L29/41725 ,  H01L29/4232

Abstract: PURPOSE: A field effect transistor including an Ag doped ZnO nano wire and a manufacturing method thereof are provided to obtain high electric property by controlling the doping and composition of a nano wire. CONSTITUTION: A gate insulation layer(12) is formed on a substrate(11). A source electrode(14) and a drain electrode(15) are positioned on the gate insulation layer. The source electrode and the drain electrode include a first layer made of titanium and a second layer made of conductive materials. A nano wire(13) is positioned between the source electrode and the drain electrode. The nano wire includes Ag doped ZnO.

Abstract translation: 目的：提供一种包括Ag掺杂ZnO纳米线的场效应晶体管及其制造方法，以通过控制纳米线的掺杂和组成来获得高电性能。 构成：在基板（11）上形成栅绝缘层（12）。 源电极（14）和漏电极（15）位于栅极绝缘层上。 源电极和漏电极包括由钛制成的第一层和由导电材料制成的第二层。 纳米线（13）位于源电极和漏电极之间。 纳米线包括Ag掺杂的ZnO。

公开(公告)号：KR101076690B1

公开(公告)日：2011-10-26

申请号：KR1020090085229

申请日：2009-09-10

Applicant: 한국과학기술연구원

Inventor： 이상렬 ,  박동훈 ,  김경원

IPC: H01L21/336 ,  H01L29/78

Abstract: 전계효과트랜지스터는, 기판; 상기기판상의게이트절연막; 상기게이트절연막상에서로이격하여위치하는소스전극및 드레인전극; 및상기소스전극및 상기드레인전극사이에위치하며, 은이도핑된산화아연을포함하여이루어지는나노선을포함할수 있다. 전계효과트랜지스터의제조방법은, 제1 기판상에게이트절연막을형성하는단계; 제2 기판상에나노선을형성하는단계; 상기나노선의적어도일부를상기제2 기판으로부터분리하여용액에혼합시키는단계; 상기나노선이혼합된용액을제1 기판에주입하여상기제1 기판상에나노선을위치시키는단계; 및상기제1 기판상에상기나노선을사이에두고서로이격된소스전극및 드레인전극을형성하는단계를포함할수 있다.

公开(公告)号：KR1020120019126A

公开(公告)日：2012-03-06

申请号：KR1020100082298

申请日：2010-08-25

Applicant: 한국과학기술연구원

Inventor： 박동훈 ,  이상렬 ,  이동윤 ,  김경원

IPC: G01N27/12 ,  B82B1/00 ,  G01N27/407

Abstract: PURPOSE: A Ga-doped nano-wire gas sensor and a manufacturing method of the same are provided to be used for the various technical fields in which the gas sensing is necessary. CONSTITUTION: A Ga-doped nano-wire gas sensor comprises a substrate(101), an insulating layer(102), and a nano-wire(103) and a plurality of electrode. The insulating layer is formed in the top of the substrate. The nano-wire is located on surface the insulating layer. The gallium is doped in the nano-wire. A plurality of electrodes is electrically connected to the nano-wire.

Abstract translation: 目的：提供一种Ga掺杂纳米线气体传感器及其制造方法，用于需要气体感测的各种技术领域。 构成：Ga掺杂纳米线气体传感器包括衬底（101），绝缘层（102）和纳米线（103）和多个电极。 绝缘层形成在基板的顶部。 纳米线位于绝缘层的表面上。 镓在纳米线中掺杂。 多个电极电连接到纳米线。