금속 나노적층체 및 이의 제조 방법
    2.
    发明授权
    금속 나노적층체 및 이의 제조 방법 有权
    金属纳米层压板及其制造方法

    公开(公告)号:KR101837440B1

    公开(公告)日:2018-03-09

    申请号:KR1020160054103

    申请日:2016-05-02

    Inventor: 최인석 김영근

    CPC classification number: C25D1/006 C25D1/04 C25D3/12 C25D3/48 C25D5/12 C25D11/045

    Abstract: 본발명의일 실시예는, 길이방향을따라적층된복수의단위체들을포함하고, 상기복수의단위체들각각은상기길이방향을따라적층된제1 층과제2 층을포함하며, 상기제1 층은제1 금속원소로이루어진제1 금속물질을포함하고, 상기제2 층은제2 금속원소로이루어진제2 금속물질과상기제1 금속물질을함께포함하고, 상기길이방향을따른상기제1 층및 상기제2 층의두께는각각 5㎚이상 100㎚미만인금속나노적층체를개시한다.

    Abstract translation: 本发明的一个实施例包括沿着纵向方向堆叠的多个单元片,多个单元片中的每一个包括沿着纵向方向堆叠的第一层任务两层, 其中第一层包括由第一金属元素组成的第一金属材料,第二层包括由第二金属元素和第一金属材料组成的第二金属材料, 而第二层分别具有5nm或更大并且小于100nm的厚度。

    하이브리드형 자성체/반도체 스핀소자 및 그 제조방법
    4.
    发明公开
    하이브리드형 자성체/반도체 스핀소자 및 그 제조방법 失效
    混合磁体/半导体旋转装置及其制造方法,其中磁性材料用于源区和漏区

    公开(公告)号:KR1020040081625A

    公开(公告)日:2004-09-22

    申请号:KR1020030016170

    申请日:2003-03-14

    Abstract: PURPOSE: A hybrid magnet/semiconductor spin device and its fabrication method are provided to fabricate a spin injection device and a spin field effect transistor from a spin valve effect obtained by injecting carriers spin-polarized from a ferromagnetic material into a semiconductor. CONSTITUTION: The hybrid magnet/semiconductor spin device includes a semiconductor substrate and a source region(21) of magnetic material formed on the substrate. A spin channel region is formed on the substrate and carriers spin-polarized from the source region are injected into the spin channel region. And a drain region(22) of magnetic material is formed on the substrate and spins passing through the spin channel region are detected in the drain region.

    Abstract translation: 目的:提供一种混合磁体/半导体自旋装置及其制造方法,以从通过将从铁磁材料自旋极化的载流子注入半导体而获得的自旋阀效应来制造自旋注入装置和自旋场效应晶体管。 构成:混合磁体/半导体自旋装置包括半导体衬底和形成在衬底上的磁性材料源区(21)。 在衬底上形成自旋沟道区,并将从源极区自旋极化的载流子注入到自旋沟道区。 并且在衬底上形成磁性材料的漏极区域(22),并且在漏极区域中检测到通过自旋沟道区域的自旋。

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