公开(公告)号：KR1020030080416A

公开(公告)日：2003-10-17

申请号：KR1020020019017

申请日：2002-04-08

Applicant: 한국과학기술연구원

Inventor： 김용태 ,  이창우 ,  심현상 ,  김성일

IPC: H01L21/205

Abstract: PURPOSE: A thin film depositing method using pulse plasma discharge is provided to be capable of effectively transforming reaction gas into plasma by using a pulse plasma production apparatus. CONSTITUTION: After transforming reaction gas A into the first plasma using a pulse plasma production apparatus, the first thin film is deposited at the upper portion of a wafer by flowing the first plasma into a thin film depositing apparatus. Then, the first plasma is exhausted by using purge gas. After transforming reaction gas B into the second plasma, the second thin film is deposited on the first thin film. Then, the second plasma is exhausted by using the purge gas. The pulse plasma production apparatus is provided with a power supply(21), a slide transformer(22) for decreasing the voltage supplied from the power supply, a high voltage transformer(23) for increasing the voltage supplied from the slide transformer, a load(25) for generating plasma by using the voltage supplied from the high voltage transformer, and a rotating spark gap switch(24) for connecting the high voltage transformer with the load.

Abstract translation: 目的：使用脉冲等离子体放电的薄膜沉积方法能够通过使用脉冲等离子体生产设备来有效地将反应气体转化成等离子体。 构成：使用脉冲等离子体生产装置将反应气体A转换成第一等离子体后，通过使第一等离子体流入薄膜沉积装置，将第一薄膜沉积在晶片的上部。 然后，通过使用吹扫气体排出第一等离子体。 在将反应气体B转化成第二等离子体之后，第二薄膜沉积在第一薄膜上。 然后，通过使用净化气体排出第二等离子体。 脉冲等离子体制造装置设置有电源（21），用于降低从电源供给的电压的滑动变压器（22），用于增加从滑动变压器供给的电压的高压变压器（23），负载 （25），用于通过使用从高压变压器提供的电压产生等离子体;以及用于将高压变压器与负载连接的旋转火花隙开关（24）。

公开(公告)号：KR100455753B1

公开(公告)日：2004-11-06

申请号：KR1020020019017

申请日：2002-04-08

Applicant: 한국과학기술연구원

Inventor： 김용태 ,  이창우 ,  심현상 ,  김성일

IPC: H01L21/205

Abstract: PURPOSE: A thin film depositing method using pulse plasma discharge is provided to be capable of effectively transforming reaction gas into plasma by using a pulse plasma production apparatus. CONSTITUTION: After transforming reaction gas A into the first plasma using a pulse plasma production apparatus, the first thin film is deposited at the upper portion of a wafer by flowing the first plasma into a thin film depositing apparatus. Then, the first plasma is exhausted by using purge gas. After transforming reaction gas B into the second plasma, the second thin film is deposited on the first thin film. Then, the second plasma is exhausted by using the purge gas. The pulse plasma production apparatus is provided with a power supply(21), a slide transformer(22) for decreasing the voltage supplied from the power supply, a high voltage transformer(23) for increasing the voltage supplied from the slide transformer, a load(25) for generating plasma by using the voltage supplied from the high voltage transformer, and a rotating spark gap switch(24) for connecting the high voltage transformer with the load.

Abstract translation: 目的：提供一种使用脉冲等离子体放电的薄膜沉积方法，能够通过使用脉冲等离子体生产设备将反应气体有效地转化为等离子体。 组成：使用脉冲等离子体生产装置将反应气体A转化为第一等离子体后，通过使第一等离子体流入薄膜沉积装置，将第一薄膜沉积在晶片的上部。 然后，通过使用吹扫气体排出第一等离子体。 在将反应气体B转化为第二等离子体之后，将第二薄膜沉积在第一薄膜上。 然后，通过使用吹扫气体来排出第二等离子体。 脉冲等离子体生成装置具备：电源（21）;降低从电源供给的电压的滑动变压器（22）;高压变压器（23），其使从滑动变压器供给的电压升压;负载 （25），用于通过使用从高压变压器提供的电压产生等离子体;以及旋转火花隙开关（24），用于将高压变压器与负载连接。