公开(公告)号：KR1020020036125A

公开(公告)日：2002-05-16

申请号：KR1020000066143

申请日：2000-11-08

Applicant: 한국과학기술연구원

Inventor： 송종한 ,  최원국 ,  정형진 ,  임성일

IPC: H01L33/02

Abstract: PURPOSE: A ZnO/Si heterojunction photodiode is provided to simply embody a photodiode through a single deposition process of a ZnO thin film by using the ZnO thin film as a visible ray transmission window, and to increase quantum efficiency by 50 percent through a thickness control of the ZnO thin film and crystallinity. CONSTITUTION: A heterojunction photodiode includes a silicon substrate and a zinc oxide layer formed on the silicon substrate. The silicon substrate is of a p-type conductivity type, and the zinc oxide layer is of an n-type conductivity type. The zinc oxide layer has an energy band gap of 3.1-3.2 electron-volt.

Abstract translation: 目的：提供ZnO / Si异质结光电二极管，通过使用ZnO薄膜作为可见光透射窗，通过ZnO薄膜的单次沉积工艺实现光电二极管，并通过厚度控制将量子效率提高了50％ 的ZnO薄膜和结晶度。 构成：异质结光电二极管包括形成在硅衬底上的硅衬底和氧化锌层。 硅衬底为p型导电型，氧化锌层为n型导电型。 氧化锌层的能带隙为3.1-3.2电子伏特。

公开(公告)号：KR100375595B1

公开(公告)日：2003-03-15

申请号：KR1020000046213

申请日：2000-08-09

Applicant: 한국과학기술연구원

Inventor： 송종한 ,  최원국 ,  윤영수 ,  이석 ,  임성일

IPC: H01L29/872

Abstract: PURPOSE: A method for forming a high voltage Schottky diode is provided to increase a breakdown voltage, by performing an ion implantation process in a self-aligned method to carry out an edge termination. CONSTITUTION: A metal layer pattern is formed on a silicon substrate(110). Ions are implanted into the silicon substrate by using the meal layer pattern as an ion implantation mask. Boron ions are used in the ion implantation process. The silicon substrate has an N-type conductivity. The metal layer pattern is composed of gold.

Abstract translation: 目的：提供一种形成高压肖特基二极管的方法，以通过以自对准方法执行离子注入工艺来执行边缘端接来增加击穿电压。 构成：在硅衬底（110）上形成金属层图案。 通过使用膳食层图案作为离子注入掩模将离子注入到硅衬底中。 硼离子用于离子注入过程。 硅衬底具有N型导电性。 金属层图案由金组成。

公开(公告)号：KR1020020012942A

公开(公告)日：2002-02-20

申请号：KR1020000046213

申请日：2000-08-09

Applicant: 한국과학기술연구원

Inventor： 송종한 ,  최원국 ,  윤영수 ,  이석 ,  임성일

IPC: H01L29/872

Abstract: PURPOSE: A method for forming a high voltage Schottky diode is provided to increase a breakdown voltage, by performing an ion implantation process in a self-aligned method to carry out an edge termination. CONSTITUTION: A metal layer pattern is formed on a silicon substrate(110). Ions are implanted into the silicon substrate by using the meal layer pattern as an ion implantation mask. Boron ions are used in the ion implantation process. The silicon substrate has an N-type conductivity. The metal layer pattern is composed of gold.

Abstract translation: 目的：提供一种用于形成高电压肖特基二极管的方法，以通过以自对准方式执行离子注入工艺来实现边缘终止来增加击穿电压。 构成：在硅衬底（110）上形成金属层图案。 通过使用餐层图案作为离子注入掩模将离子注入到硅衬底中。 硼离子用于离子注入工艺。 硅衬底具有N型导电性。 金属层图案由金组成。