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    N-터셔리-부톡시카르보닐말레이미드 단량체 제조방법
    1.
    发明授权
    N-터셔리-부톡시카르보닐말레이미드 단량체 제조방법 失效
    叔丁氧羰

    公开(公告)号：KR1019930009814B1

    公开(公告)日：1993-10-11

    申请号：KR1019910010273

    申请日：1991-06-21

    Applicant: 한국과학기술연구원

    Inventor： 안광덕 ,  이영훈 ,  구덕일 ,  정동욱

    IPC: C07D207/277

    Abstract: This is a new N-tert-butoxycarbonylmaleimide (t-BOCMI) of formula (I) . The method comprises (A) reacting maleimide and furan and forming 3,6-epoxy- 1,2,3,6-tetrahydrophthalimide by Diels - Alder reaction; (B) making N-(t-butoxycarbonyl)3,6-epoxy- 1,2,3,6- tetrahydrophthalimide by reacting (A) and di-t- butyldicarbonate; and (C) heating and decomposing (B) in toluen and getting final product of (I). Total process yield is 87% and melting pt. of the product is 62 deg.C. The product is identified by IR, C13 and H1 NMR, MS, GC/MS, and component analysis. The above t-BOCMI is a very good resist material.

    Abstract translation: 这是式（I）的新的N-叔丁氧基羰基马来酰亚胺（t-BOCMI）。 该方法包括（A）使马来酰亚胺和呋喃反应，并通过Diels-Alder反应形成3,6-环氧-1,2,3,6-四氢邻苯二甲酰亚胺; （B）通过使（A）和二碳酸二叔丁酯反应制备N-（叔丁氧基羰基）3,6-环氧-1,2,3,6-四氢邻苯二甲酰亚胺; 和（C）在甲苯中加热分解（B）并得到（I）的最终产物。 总工艺产量为87％，熔点pt。 的产品是62摄氏度 该产品通过IR，C13和H1 NMR，MS，GC / MS和组分分析鉴定。 上述t-BOCMI是一种很好的抗蚀材料。

    N-t-부톡시카르보닐말레이미드와 스티렌유도체의 공중합체 제조방법 및 N-t-부톡시카르보닐말레이미드와 스티렌유도체의 공중합체를 이용한 내열성 포지티브 레지스트 화상 형성 방법
    3.
    发明授权
    N-t-부톡시카르보닐말레이미드와 스티렌유도체의 공중합체 제조방법 및 N-t-부톡시카르보닐말레이미드와 스티렌유도체의 공중합체를 이용한 내열성 포지티브 레지스트 화상 형성 방법 失效
    生产N-叔丁氧羰基马来酰亚胺与苯乙烯衍生物的共聚物的方法以及用N-叔丁氧羰基马来酰亚胺与苯乙烯衍生物的共聚物形成耐热正性抗蚀剂的方法

    公开(公告)号：KR1019950000702B1

    公开(公告)日：1995-01-27

    申请号：KR1019910010272

    申请日：1991-06-21

    Applicant: 한국과학기술연구원

    Inventor： 안광덕 ,  구덕일 ,  정동욱

    IPC: C08G73/06

    Abstract: The copolymer, useful for a heat-resistant positive resist image, of N-t-butoxycarbonyl maleimide and styrene deriv. is produced by radical polycondensing an N-t-butoxycarbonyl maleimide monomer and a styrene deriv. with a radical initiator. The styrene deriv. is pref. styrene, p-acetoxystyrene, p-methylstyrene, p-t-butoxycarbonyloxystyrene, p-trimethylsillylstyrene or p- chlorinated styrene. The resist image is formed by spin-coating a soln. obtd. by dissolving the copolymer and an onium salt in a chlorobenzene on the silicon wafer, prebaking, ultra-violet exposing and postbaking the coated wafer, and developing it with a developing liquor i.e. trimethylammonium hydroxy soln., anisole, toluene, methylisobutyl ketone or chloroform.

    Abstract translation: 用于耐热正性抗蚀剂图像的共聚物，N-叔丁氧基羰基马来酰亚胺和苯乙烯衍生物。 通过自由基缩聚N-叔丁氧基羰基马来酰亚胺单体和苯乙烯衍生物来制备。 与激进的发起者。 苯乙烯衍生物 是首选 苯乙烯，对乙酰氧基苯乙烯，对甲基苯乙烯，对叔丁氧基羰氧基苯乙烯，对三甲基甲硅烷基苯乙烯或对氯化苯乙烯。 通过旋涂溶胶形成抗蚀剂图像。 obtd。 通过将共聚物和鎓盐溶解在硅晶片上的氯苯中，预烘烤，紫外曝光和后烘烤涂覆的晶片，并用显影液，即三甲基铵羟基溶胶，苯甲醚，甲苯，甲基异丁基酮或氯仿显影。

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