Abstract:
본명세서에는부처손유기용매추출물을유효성분으로포함하는항암조성물이개시된다. 일측면에서, 부처손알코올추출물을유효성분으로함유하는조성물은, 화학요법제와병용투여될때, 화학요법제의항암효과를증진시킬수 있다. 상기조성물을병용투여하면, 적은양의항암제를투여하여도우수한항암효과를얻을수 있다. 따라서, 암세포외에건강한세포에도세포독성이있는항암제의투여량을줄일수 있어, 암환자의건강을유지하면서효과적으로암을치료할수 있다.
Abstract:
PURPOSE: A thin film transistor having passivation layer comprising metal and a method for fabricating the same are provided to prevent oxygen, moisture or impurity from being penetrated to a channel layer by using the passivation layer. CONSTITUTION: A gate insulating layer(20) is located on the surface of a gate electrode. A channel layer(30) is located on the surface of the gate insulating layer. A source electrode and a drain electrode are separated from each other and touch the channel layer. A passivation layer(40) is separated from the source and the drain electrode and having conducting material including metal.
Abstract:
본 발명은 동작 추정을 위한 모션 센서의 교정 방법에 관한 것이다. 이를 위해 본 발명의 일실시예에 따른 모션 센서의 교정 방법은, 사용자가 모션 센서가 부착된 신체 부위를 회전할 때, 모션 센서의 회전 행렬을 계산하는 단계와, 모션 센서가 부탁된 신체 부위의 회전 행렬을 계산하는 단계와, 계산된 모션 센서의 회전 행렬에서 계산된 신체부위의 회전 행렬로의 변환 회전 행렬을 계산하는 단계와, 계산된 변환 회전 행렬을 이용하여 모션 센서의 좌표계와 모션 센서가 부착된 신체 부위의 좌표계를 일치시킴으로써 교정하는 단계를 포함한다.
Abstract:
PURPOSE: A thin film transistor applying a dual electrode structure and a manufacturing method thereof are provided to output large currents by the same gate voltage or drain voltage by applying the dual electrode structure to a source electrode and a drain electrode. CONSTITUTION: A gate electrode(11) is formed on a substrate(100). A gate insulation layer(12) covers the gate electrode. A first source electrode(13a) is separated from a first drain electrode(13b) on the gate insulation layer with a first distance. A channel layer(14) is located on the first source electrode, the gate insulation layer, and the first drain electrode. A second source electrode(15a) and a second drain electrode(15b) are located on the first source electrode, the channel layer, and the first drain electrode.
Abstract:
PURPOSE: A calibrating method of a motion sensor for tracking motions is provided to accurately calibrate the motion sensor with a simple motion rotating a body portion where the motion sensor is attached. CONSTITUTION: A calibrating method of a motion sensor for tracking motions comprises: a step(120) of calculating a rotation matrix of the motion sensor when a user rotates a body portion where the motion is attached; a step(130) of calculating a rotation matrix of the body portion where the motion sensor is attached; a step(140) of calculating a conversion-rotation matrix converted into the calculated rotation matrix of the body portion based on the rotation sensor of the motion sensor; and a step(150) of calibrating the motion sensor by coinciding a coordinate system of the motion sensor and a coordinate system of the body portion where the motion sensor is attached by using the calculated conversion-rotation matrix. [Reference numerals] (110) Attach a motion sensor to a body portion of a user; (120) Rotate the body portion about a certain axis; (130) Calculate rotation matrices of the motion sensor and the body portion; (140) Calculate a conversion-rotation matrix; (150) Execute calibration of the motion sensor; (AA) Start; (BB) End
Abstract:
PURPOSE: A tangible snowboard device is provided to give the interaction movement of a motion platform to a user and to obtain a realistic snowboard game environment. CONSTITUTION: A tangible snowboard device comprises a motion sensor(10) which is adhered to the body of a user and senses the movement of the user, a motion platform(20) for providing a realistic interaction to a user, a control unit(40) providing an interaction movement to the user through the motion platform, and a display unit(30) which provides video information corresponding to the movement of the user. [Reference numerals] (10) Motion sensor; (20) Motion platform; (30) Display unit; (40) Control unit
Abstract:
PURPOSE: A thin film transistor with buried layer and a method for manufacturing the same are provided to improve the driving property of a thin film transistor by improving the punch-through between a drain electrode and a source electrode. CONSTITUTION: In a thin film transistor with buried layer and a method for manufacturing the same, a source electrode(14a) and a drain electrode(14b) are separated from each other. A channel layer(13) comprises a first layer and a second layer which contacts with the source electrode and the drain electrode. The carrier concentration of the first layer is higher than that of the second layer. A gate insulating layer(12) is contacted with the channel layer and the source and drain electrodes. A gate electrode(11) is contacted with the gate insulating layer.