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公开(公告)号：KR101711524B1
公开(公告)日：2017-03-02
申请号：KR1020150100581
申请日：2015-07-15
Applicant: 한국과학기술연구원
CPC classification number: H01L29/516 , H01L29/41775 , H01L29/42364 , H01L29/42372 , H01L29/66984 , H01L43/00
Abstract: 위상절연체를포함하는트랜지스터를제공한다. 트랜지스터는, i) 기판, ii) 기판위에위치한위상절연체층, iii) 위상절연체층위에위치한드레인전극, iv) 드레인전극과이격되고, 위상절연체층위에위치하며, 강자성체를포함하는소스전극, v) 소스전극위에위치한터널접합층, 및 vi) 터널접합층위에위치한게이트전극을포함한다. 위상절연체층의스핀방향이그 표면에흐르는전류에의해고정되고, 게이트전극에인가되는전압에따라소스전극의스핀방향이기설정된방향으로변한다.
Abstract translation: 公开了包括拓扑绝缘体的晶体管。 晶体管包括：衬底; 设置在基板上的拓扑绝缘体; 设置在拓扑绝缘体上的漏电极; 与所述漏电极分离的源电极，设置在所述拓扑绝缘体上，并且包含铁磁性物质; 设置在源电极上的隧道结层; 以及设置在隧道结层上的栅电极。 拓扑绝缘体的自旋方向由流过其表面的电流固定，并且通过施加到栅电极的电压将源极的自旋方向改变到预定方向。
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Patent Agency Ranking
公开(公告)号：KR1020170009109A
公开(公告)日：2017-01-25
申请号：KR1020150100581
申请日：2015-07-15
Applicant: 한국과학기술연구원
CPC classification number: H01L29/516 , H01L29/41775 , H01L29/42364 , H01L29/42372 , H01L29/66984 , H01L43/00
Abstract: 위상절연체를포함하는트랜지스터를제공한다. 트랜지스터는, i) 기판, ii) 기판위에위치한위상절연체층, iii) 위상절연체층위에위치한드레인전극, iv) 드레인전극과이격되고, 위상절연체층위에위치하며, 강자성체를포함하는소스전극, v) 소스전극위에위치한터널접합층, 및 vi) 터널접합층위에위치한게이트전극을포함한다. 위상절연체층의스핀방향이그 표면에흐르는전류에의해고정되고, 게이트전극에인가되는전압에따라소스전극의스핀방향이기설정된방향으로변한다.
Abstract translation: 提供了包括相位绝缘体的晶体管。 Iv）源电极，其与漏电极隔开并位于相绝缘体层上，源电极包括铁磁材料; v）位于相绝缘体层上方的源电极; 位于源电极之上的隧道结层，以及vi）位于隧道结层之上的栅电极。 相绝缘体层的自旋方向由其表面上流动的电流固定，并且源电极的自旋方向根据施加到栅电极的电压在设定方向上改变。
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公开(公告)号：KR101192335B1
公开(公告)日：2012-10-26
申请号：KR1020110045840
申请日：2011-05-16
Applicant: 한국과학기술연구원
IPC: G06F9/455
CPC classification number: G06F17/5018 , G06F17/5009 , G06F2217/16 , G06T13/20 , G06T13/80
Abstract: PURPOSE: A fluid simulation method and a recording medium performing the same are provided to increase a degree which velocity momentum is satisfied, thereby overcoming instability of a lattice Boltzmann model. CONSTITUTION: Space in which fluid flows is become dioxide by a lattice of a regular interval(S10). It assumes that particles of the fluid repetitively move and collide on the lattice(S20). Maxwell-Boltzmann distribution is compared with n-th velocity momentum of Maxwell-Boltzmann distribution with dioxide. A linear polynomial equation is induced(S30). A weight coefficient corresponding to a discrete velocity of the particles of the fluid is calculated(S40). [Reference numerals] (AA) Start; (BB) End; (S10) Step for becoming dioxide for a space which fluid flows as a lattice of a regular interval; (S20) Step for assuming that particles of the fluid repetitively move and collide on the lattice; (S30) Step for inducing a linear polynomial equation by comparing Maxwell-Boltzmann distribution and n-th velocity momentum of the Maxwell-Boltzmann distribution with dioxide; (S40) Step for calculating a weight coefficient corresponding to a discrete velocity of the particles of the fluid based on the linear polynomial equation; (S50) Step for drawing a lattice Boltzmann model by using the weight coefficient
Abstract translation: 目的：提供流体模拟方法和执行该流体模拟方法的记录介质以增加满足速度动量的程度，从而克服格子波尔兹曼模型的不稳定性。 构成：流体流动的空间通过规则间隔的格子变成二氧化物（S10）。 它假定流体的颗粒重复地移动并碰撞在格子上（S20）。 麦克斯韦 - 波尔兹曼分布与麦克斯韦 - 波尔兹曼分布与二氧化碳的第n速度动量进行比较。 诱导线性多项式方程（S30）。 计算对应于流体颗粒的离散速度的重量系数（S40）。 （附图标记）（AA）开始; （BB）结束; （S10）流体作为规则间隔的格子流动的空间的二氧化物的步骤; （S20）假设流体的粒子重复地移动并碰撞在格子上的步骤; （S30）通过将Maxwell-Boltzmann分布的麦克斯韦 - 玻尔兹曼分布和第n速度动量与二氧化物进行比较来诱导线性多项式方程的步骤; （S40）基于线性多项式方程计算与流体粒子的离散速度对应的权重系数的步骤; （S50）使用权重系数绘制格子波尔兹曼模型的步骤
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公开(公告)号：KR101084019B1
公开(公告)日：2011-11-16
申请号：KR1020100044330
申请日：2010-05-12
Applicant: 한국과학기술연구원
IPC: H01L29/82 , H01L29/772 , H01L29/78 , H01L27/105
CPC classification number: H03K19/091 , B82Y10/00 , G11C11/16 , H03K19/18 , H01L29/42312 , H01L29/78618 , H01L29/78624 , H01L29/78696
Abstract: PURPOSE: A complementary spin transfer logic circuit is provided to prevent the oxidation and denaturalization of a channel structure by forming an InAs capping layer on the channel structure. CONSTITUTION: A source(103) is arranged on a semiconductor substrate(101). A spin-polarized electron is injected to a channel structure(200) through the source. The spin-polarized electron is injected to a drain(104) via the channel structure. A gate electrode(106) is arranged on the source, drain, and channel structure. The gate electrode controls the spin of electrons passing through a channel layer included in the channel structure.
Abstract translation: 目的：提供互补的自旋转移逻辑电路，以通过在通道结构上形成InAs覆盖层来防止通道结构的氧化和变性。 构成：源（103）布置在半导体衬底（101）上。 自旋极化电子通过源被注入到通道结构（200）中。 自旋极化电子通过沟道结构注入漏极（104）。 栅极电极（106）布置在源极，漏极和沟道结构上。 栅电极控制通过通道结构中包括的沟道层的电子的自旋。
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公开(公告)号：KR101435549B1
公开(公告)日：2014-09-02
申请号：KR1020130027349
申请日：2013-03-14
Applicant: 한국과학기술연구원
IPC: H01L29/78 , H01L21/336
CPC classification number: H01L29/0673 , H01L29/41725 , H01L29/4238 , H01L29/66984
Abstract: Provided is a complementary device which includes a gate electrode, a channel, a source electrode which is connected to the gate electrode and the channel, and a first drain electrode and a second drain electrode which are connected to the gate electrode and the channel. In the first drain electrode, a spin which is injected into the source electrode rotates and moves in a first direction from the source electrode to the first drain electrode through the channel by applying the voltage to the gate electrode. In the second drain electrode, the spin which is injected into the source electrode rotates and moves in a second direction from the source electrode to the second drain electrode through the channel by applying the voltage to the gate electrode. The direction of the spin reaching the first drain electrode is opposite to the direction of the spin reaching the second drain electrode.
Abstract translation: 提供了一种互补装置，其包括栅电极，沟道，连接到栅电极和沟道的源极，以及连接到栅电极和沟道的第一漏电极和第二漏电极。 在第一漏电极中，通过向栅电极施加电压，注入到源电极的自旋通过沟道从第一方向从源电极向第一漏电极移动。 在第二漏电极中，通过向栅电极施加电压，注入到源电极中的自旋通过沟道沿着第二方向从源电极向第二漏电极移动。 到达第一漏电极的自旋方向与到达第二漏电极的自旋方向相反。
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