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公开(公告)号：KR100978491B1
公开(公告)日：2010-08-30
申请号：KR1020080125792
申请日：2008-12-11
Applicant: 한국과학기술원
CPC classification number: G11B5/855 , B82Y25/00 , H01F1/009 , H01F1/065 , H01F1/068 , H01F41/18 , Y10T428/24612
Abstract: 본 발명은 L1
0 규칙화 구조의 FePt 나노 도트 어레이의 제조방법에 관한 것으로, 더욱 상세하게는 CFL 공정(Capillary Force Lithography : 삼투 압력 리소그래피)을 이용하여 L1
0 규칙화 구조의 FePt 나노 도트 어레이를 제조하는 방법에 관한 것이다.
이를 위해 본 발명에 따른 L1
0 규칙화 구조의 FePt 나노 도트 어레이의 제조방법는 기판 상에 FePt 박막을 증착하는 제 1단계와, 상기 제 1단계에서 증착된 FePt 박막 상에 스핀 코팅을 이용하여 고분자 물질을 박막으로 형성하는 제 2단계와, 상기 제 2단계에서 스핀 코팅된 FePt 박막에 몰드를 접촉하는 제 3단계와, 상기 제 3단계에서 접촉된 몰드와 폴리머 패턴을 열처리(annealing)하는 제 4단계와, 상기 제 4단계에서 열처리된 몰드와 폴리머 패턴을 냉각 및 분리시키는 제 5단계와, 반응성 이온 에칭을 통하여 폴리머 패턴의 사이즈를 조절하는 제 6단계와, 상기 폴리머 패턴에 덮히지 않은 FePt 박막을 이온 밀링하여 FePt 나노 도트 형성 후, 남아있는 폴리머 층을 제거하는 제 7단계와, FePt 나노 도트 어레이를 열처리하는 제 8단계를 포함한다.
CFL, FePt 박막, 수직 자기 기록 매체, 패턴된 나노 도트 어레이-
公开(公告)号：KR1020100067303A
公开(公告)日：2010-06-21
申请号：KR1020080125792
申请日：2008-12-11
Applicant: 한국과학기술원
CPC classification number: G11B5/855 , B82Y25/00 , H01F1/009 , H01F1/065 , H01F1/068 , H01F41/18 , Y10T428/24612
Abstract: PURPOSE: A FePt nano dot array of a L10 ordering structure, a manufacturing method of the FePt nano dot array of a L10 ordering structure, and a high- density magnetic recording medium using the array are provided to enhance the recording stability by manufacturing a magnetic thin film using FePt. CONSTITUTION: A manufacturing method of the FePt nano dot array of a L10 ordering structure comprises next steps. A FePt thin film is deposited on a substrate(S10). Polymer is formed as a thin film on the deposited FePt thin film using a spin coating(S20). Mold makes a contact with the spin-coated FePt thin film(S30). The contacted mold and a polymer pattern are heat-treated(S40). The heat-treated mold and the polymer pattern are cooled and separated(S50). The size of the polymer pattern is controlled through reactive ion etching(S60). After forming FePt nano dot by ion-milling the FePt thin film which is not covered by the polymer pattern, the polymer layer remaining is eliminated(S70). The FePt nano dot array is heat-treated(S80).
Abstract translation: 目的：提供L10有序结构的FePt纳米点阵列，L10有序结构的FePt纳米点阵列的制造方法和使用该阵列的高密度磁记录介质，以通过制造磁性来提高记录稳定性 使用FePt薄膜。 构成：L10排序结构的FePt纳米点阵列的制造方法包括以下步骤。 在基板上沉积FePt薄膜（S10）。 使用旋转涂布在沉积的FePt薄膜上形成聚合物作为薄膜（S20）。 模具与旋涂FePt薄膜接触（S30）。 将接触的模具和聚合物图案进行热处理（S40）。 将经热处理的模具和聚合物图案冷却并分离（S50）。 通过反应离子蚀刻来控制聚合物图案的尺寸（S60）。 通过离子研磨未被聚合物图案覆盖的FePt薄膜形成FePt纳米点后，残留的聚合物层被消除（S70）。 对FePt纳米点阵列进行热处理（S80）。
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公开(公告)号：KR1020040037609A
公开(公告)日：2004-05-07
申请号：KR1020020066163
申请日：2002-10-29
Applicant: 한국과학기술원
IPC: G11B5/62
CPC classification number: G11B5/653 , G11B5/7325 , G11B5/82 , G11B5/84 , G11B5/851
Abstract: PURPOSE: A high density magnetic recording medium using a FePtC thin film and a manufacturing method thereof are provided to improve an information storing density by adding carbon to an FePt thin film used for an information storing tool in magnetic recording. CONSTITUTION: The magnetic recording medium includes the FePtC alloy thin film layer simultaneously depositing Fe, Pt, and C on an MgO substrate at 400 deg.C. Composition of the Fe and the Pt is 1:1 atomic ratio. As changing a ratio of the C from 0 to 85 percents, the ratio to increase the information storing density and decrease a noise as the information storing medium having coercivity and a small crystalline powder size fit to a high density magnetic recording device is found out.
Abstract translation: 目的：提供使用FePtC薄膜的高密度磁记录介质及其制造方法，以通过向用于磁记录中的信息存储工具的FePt薄膜添加碳来提高信息存储密度。 构成：磁记录介质包括FePtC合金薄膜层，同时在400℃下在MgO基板上沉积Fe，Pt和C. Fe和Pt的组成为1：1的原子比。 由于将C比例从0增加到85％，所以发现随着具有适合于高密度磁记录装置的矫顽磁力和小结晶粉末尺寸的信息存储介质，增加信息存储密度并降低噪声的比率。
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公开(公告)号：KR100470151B1
公开(公告)日：2005-02-05
申请号：KR1020020066163
申请日：2002-10-29
Applicant: 한국과학기술원
IPC: G11B5/62
CPC classification number: G11B5/653 , G11B5/7325 , G11B5/82 , G11B5/84 , G11B5/851
Abstract: Disclosed is a high density magnetic recording medium which has coercivity suitable to a magnetic record, fine grains, and a uniform grain size distribution, and which includes a FePtC alloy thin film containing an optimum carbon content, and a method of manufacturing the high density magnetic recording medium. The magnetic recording medium includes the FePtC alloy thin film containing 25 volume % carbon, thus having microscopic magnetic and structural properties suitable to the high density magnetic recording medium. Additionally, the method of manufacturing the magnetic recording medium is characterized in that the method includes depositing the FePtC alloy thin film on a substrate at 400° C. using a dc magnetron sputtering device through a simultaneous deposition process, the FePtC alloy thin film is deposited on the substrate for one hour, and the substrate is heat-treated for one hour. Thereby, a storage density of an information storing substance is increased, a noise of the magnetic recording medium is reduced, and a manufacturing temperature of the FePtC alloy thin film is lowered.
Abstract translation: 本发明公开了一种高密度磁记录介质及其制造方法，该磁记录介质具有适合于磁记录，细晶粒和均匀晶粒尺寸分布的矫顽力，并且包括含有最佳碳含量的FePtC合金薄膜， 记录介质。 磁记录介质包含含有25体积％碳的FePtC合金薄膜，因此具有适用于高密度磁记录介质的微观磁性和结构性质。 此外，制造磁记录介质的方法的特征在于，该方法包括在400℃下将FePtC合金薄膜沉积在基板上。 C.使用直流磁控溅射装置通过同时沉积工艺，将FePtC合金薄膜沉积在基底上1小时，并将基底热处理1小时。 由此，信息存储物质的存储密度增大，磁记录介质的噪声降低，并且FePtC合金薄膜的制造温度降低。
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