Abstract:
The present invention relates to ranging method and apparatus in a wireless communication system, and the ranging method of a terminal includes: the steps: transmitting a ranging signal by using a common ranging region shared between a plurality of base stations; and receiving signal including a ranging result of at least one base station that has received the ranging signal from a central control unit. The terminal directly selects at least one base station for ranging, thereby preventing ranging with unnecessary base stations, and simultaneously performing ranging by using a common ranging region between selected multiple base stations, thereby reducing the number of times transmitting raging signals by the terminal and time taken in a ranging process. [Reference numerals] (300) Terminal; (301) Base station a; (302) Base station b; (303) Base station c; (307) Central control unit; (310) Downlink signal; (312) Base station set selection; (314) Raging code and slot selection; (316,330) Raging signal; (318,332) Report reception result of raging signal.; (320) Detect raging state and raging parameter adjustment value of each base station; (322,340) Raging response signal; (324) Determine success state of raging for selected base station set; (326) Determine index representing base station, in which raging is not succeeded, among selected base stations.; (328) Re-select raging code/slot based on determined index.; (334) Determine raging target base station of terminal by using raging code/slot of terminal.; (338) Response signal to report of ranging; (342) Determine success state of raging for selected base station set
Abstract:
The present invention relates to an electronic-hole double layer tunnel field effect transistor, where a source region, a channel and a drain region are arranged at a substrate in a vertical direction, including a double gate structure. The present invention relates to the electronic-hole double layer tunnel field effect transistor and a manufacturing method thereof capable of increasing the degree of integration of the transistor at the substrate by having a vertical structure, being the electronic-hole double layer tunnel field effect transistor by applying different electrodes to the double gate structure, improving the inclination under threshold voltage and increasing operating current by using a double gate p-i-n structure and tunneling between bands, and having an implementable symmetrical double gate structure by proposing a gate of a symmetrical structure.
Abstract:
The purpose of the present invention is to provide a transistor having improved performance than a conventional FinFET by manufacturing a UTFinFET having an ultra-thin fin (UTFin) whose thickness is thinner than that of a fin which can be manufactured by a conventional FinFET manufacturing process. In order to achieve the purpose, a semiconductor device according to the present invention comprises a step of forming two Si-UTFins which protrude from a substrate and are formed on both sides of a fin made of Si and SiGe layers using an epitaxy method. The UTFin formed in this method replaces the role of a fin of a conventional FinFET. A UTFin formed using an epitaxy method overcomes a thickness limit which a fin formed by lithography has, and can have a thickness of less than 10 nm. [Reference numerals] (AA) Step of preparing a Si substrate; (BB) Step of forming a SiGe layer; (CC) Step of placing a hard mask on a Si-Fin area by patterning the hard mask on the SiGe layer; (DD) Step of forming a Si-Fin through an etching process; (EE) Step of growing a Si layer on both sides of the Si-Fin and both sides of the SiGe layer in an epitaxy method; (FF) Step of forming a first impurity resign by firstly doping an impurity into a Si-UTFin; (GG) Step of etching the hard mask; (HH) Step of firstly depositing oxide in a region etched while forming the Si-Fin, making an oxide surface even, and etching the oxide; (II) Step of forming two Si-UTFins on both sides of the Si-Fin and both sides of the SiGe layer; (JJ) Step of forming an air filled structure in a space formed by a secondly deposited oxide, the lower part of the Si-UTFin, and the Si-Fin by secondly depositing oxide onto inner walls, outer walls, top between two Si-UTFins under poor step coverage conditions and making an oxide surface even; (KK) Step of depositing a gate stack electrode; (LL) Step of forming source and drain regions which are second and third impurity regions respectively by secondly and thirdly doping on left and right sides of the Si-UTFin
Abstract:
PURPOSE: A communication method of a neighbor terminal and a target terminal is provided to supply a signal or interference component to a target terminal using a random access method or a scheduling method and to increase signal quality of a target terminal. CONSTITUTION: A neighbor terminal determines whether to cooperate with one or more target terminals(210). The neighbor terminal receives a cooperative group subscription request from a target terminal(220). The neighbor terminal requests registration to the target terminal(230). The neighbor terminal performs cooperative communication with one or more target terminals based on registration information(270).
Abstract:
PURPOSE: A communication system having an optimum network access structure is provided to reduce the number of handover in order to increase the utilization ratio of a radio resource. CONSTITUTION: A first processing module performs a signal process of an RRC(Radio Resource Control) layer, a MAC(Media Access Control) layer, and PHY layer. A switch connects a first processing module and a plurality of wireless connection devices that include a second processing module(720) according to the integration of wireless connection devices. Each second processing module transmits and receives an RF(Radio Frequency) signal by using one antenna.
Abstract:
본 발명은 휴대 인터넷 단말에서의 옥내용 기지국 탐색 개시 방법에 관한 것으로, 개별적으로 설치되는 옥내용 기지국을 포함하는 휴대 인터넷 환경에서, 휴대 인터넷 단말이 주변 옥외용 기지국으로부터의 수신신호세기에 따라 접근이 허가된 옥내용 기지국 근처에서 옥내용 기지국 탐색을 개시함으로써, 불필요한 전력의 낭비 및 자원의 낭비를 방지하기 위한, 휴대 인터넷 단말에서의 옥내용 기지국 탐색 개시 방법을 제공하고자 한다. 이를 위하여, 본 발명은, 휴대 인터넷 단말에서 옥내용 기지국의 탐색을 개시하는 방법에 있어서, 접근이 허가된 옥내용 기지국에서 측정된 주변 옥외용 기지국으로부터의 수신신호세기 프로파일 정보를 저장하는 수신신호세기 프로파일 정보 저장 단계; 상기 주변 옥외용 기지국을 대상으로 부분 유사도를 산출하여 상기 산출된 부분 유사도가 임계치를 초과하는 옥외용 기지국을 추출하는 옥외용 기지국 추출 단계; 및 상기 추출된 옥외용 기지국을 대상으로 종합 유사도를 산출하여 옥내용 기지국의 탐색을 개시하는 옥내용 기지국 탐색 개시 단계를 포함한다. 휴대 인터넷, 옥내용 기지국 탐색, 수신신호세기 프로파일 정보, 부분 유사 도, 종합 유사도
Abstract:
본 발명은 옥내용/옥외용 기지국으로 구성된 휴대인터넷 시스템에서 핸드오버를 위한 기지국 스캐닝 방법 및 그를 위한 옥내용 기지국의 분류 방법에 관한 것으로, 옥외용 기지국 내에 다수의 옥내용 기지국이 존재하는 휴대인터넷 환경에서 옥외용 기지국에 속한 단말이 옥내용 기지국으로 핸드오버를 수행할 때, 주변 옥내용 기지국을 효율적으로 스캐닝함으로써(옥내용 기지국을 분류하여 분류 특성에 맞게 스캐닝함), 전력소모와 스캐닝 지연시간을 최소화하면서 셀 내에 존재하는 수많은 옥내용 기지국 중 적절한 옥내용 기지국을 탐색할 수 있도록 하기 위한, 기지국 스캐닝 방법 및 그를 위한 옥내용 기지국의 분류 방법과, 상기 방법들을 실현시키기 위한 프로그램을 기록한 컴퓨터로 읽을 수 있는 기록매체를 제공하고자 한다. 이를 위하여, 본 발명은 옥내용/옥외용 기지국으로 구성된 휴대인터넷 시스템에서 핸드오버를 위한 기지국 스캐닝 방법에 있어서, 단말의 선호도에 기반하여, 옥내용 기지국을 스캐닝 우선순위에 따라 분류하는 단계; 및 주기적으로 주변의 옥내용 기지국을 찾거나 옥내로의 이동이 추정되는 경우, 상기 스캐닝 우선순위에 따라 해당 옥내용 기지국을 순차적으로 스캐닝하는 단계를 포함한다. 옥내용 기지국, 옥외용 기지국, 휴대인터넷, 개인용 옥내 기지국, 공용 옥내 기지국, 우선순위, 스캐닝
Abstract:
PURPOSE: A location information management device for using the mobile station and a method thereof are provided to enhance reliability through distributed management of the information by forming a plurality of mobile base stations with tree structure. CONSTITUTION: A location information management device comprises a plurality of mobile base stations with the location information of the terminal. The mobile base stations form the tree structure. The mobile base station corresponding to an upper node comprises all mobile base stations corresponding to a lower node of the upper node and the location information of the terminal with all mobile stations. In case the location information of the terminal belonging to the mobile base station corresponding to the lower node is updated, the updated location information is reported to the mobile base station corresponding to the upper node of the lower node.
Abstract:
PURPOSE: A method and a device for cell reselection of mobile terminal are provided to reflect a priority setting of proceeded signal strength after scaling signal strength of femto cell to perform cell reselection of the femto cell. CONSTITUTION: If a signal strength of reference macro cell BS(Base Station) is bigger than a signal strength of femto cell BS, a terminal performs scaling signal strength of the femto cell BS(S355). The terminal determines a priority about cell selection according to a signal strength processed by the femto cell station and a signal strength of the standard macro cell base station(S325). The terminal selects a BS which is highest priority as a cell reselection target(S340).