公开(公告)号：KR100472046B1

公开(公告)日：2005-03-09

申请号：KR1020030010071

申请日：2003-02-18

Applicant: 한국과학기술원

Inventor： 염도준 ,  김호섭 ,  정국채 ,  이병수 ,  임선미

IPC: C23C14/34

Abstract: 고온 초전도체 테이프 선재용 후막 등을 제조하기에 적합한 스퍼터링 장치에 관해 개시한다. 본 발명의 장치는, 냉매에 의해 냉각되며 스퍼터링 공정시 회전하는 원형띠 형상의 스퍼터링 타겟을 사용하므로 파워를 증가시켜도 타겟이 과열되지 않는다. 따라서, 빠른 스퍼터링을 통해 증착속도를 높일 수 있다.

公开(公告)号：KR1020040074694A

公开(公告)日：2004-08-26

申请号：KR1020030010071

申请日：2003-02-18

Applicant: 한국과학기술원

Inventor： 염도준 ,  김호섭 ,  정국채 ,  이병수 ,  임선미

IPC: C23C14/34

CPC classification number: H01J37/3497 ,  H01J37/3417

Abstract: PURPOSE: A sputtering apparatus is provided which is appropriate for prompt evaporation of high temperature superconductor by improving evaporation rate and capable of reducing influence of plasma on substrate. CONSTITUTION: The sputtering apparatus comprises two outer cylinders(20) equipped with rotation central shafts(22) with being parallel to each other and positioned with being spaced apart from each other in a certain distance; sputtering targets(30) installed to go around the outer surface of the outer cylinders and positioned so that the sputtering targets are always oppositely directed to each other; cooling means installed inside the outer cylinders respectively to cool the sputtering targets; a sputtering gas injection pipe for supplying the sputtering gas so that sputtering gas passes through a part adjacent to center of the sputtering targets oppositely directed to each other; a tape type substrate(70) positioned with being oppositely directed to the sputtering gas injection pipe and supplied so that the substrate is moved with being approximately parallel to the respective rotation central shafts of the outer cylinders; and a plasma power supply means for producing plasma(52) by ionizing sputtering gas.

Abstract translation: 目的：提供溅射装置，适用于通过提高蒸发速率及降低等离子体对基板的影响，迅速蒸发高温超导体。 构成：溅射装置包括配备有旋转中心轴（22）的两个外筒（20），它们彼此平行并且以一定距离彼此间隔开定位; 溅射靶（30）安装成围绕外筒的外表面并定位成使得溅射靶总是相互指向的; 冷却装置分别安装在外筒内部以冷却溅射靶; 溅射气体注入管，其用于供给溅射气体，使得溅射气体通过与溅射靶的相反方向相对的中心附近的部分; 位于与溅射气体注入管相反方向定位的带状基底（70），以使得基板与外筒的旋转中心轴大致平行地移动; 以及用于通过电离溅射气体产生等离子体（52）的等离子体供电装置。

公开(公告)号：KR1020030012350A

公开(公告)日：2003-02-12

申请号：KR1020010046343

申请日：2001-07-31

Applicant: 한국과학기술원

Inventor： 염도준 ,  이병수 ,  정국채

IPC: C23C14/34

CPC classification number: C23C14/0078 ,  C23C14/0063 ,  C23C14/505 ,  C23C14/568

Abstract: PURPOSE: An apparatus for fabricating thin film is provided to solve conventional problems of a bad effect on reaction stability and uniformity deterioration of sputtering rate and thin film composition by manufacturing a compound thin film as preventing mixing of reaction gas with sputtering gas. CONSTITUTION: The apparatus for fabricating thin film comprises a process chamber(100) which is divided into three parts of reaction chamber(114), pumping chamber(112) and sputtering chamber(110) from the left side by vertical partitions(100a), and in which penetration holes are formed on the vertical partitions so that the three parts are actually connected; a reaction gas injection port(114a) that is installed on the reaction chamber to inject a reaction gas into the reaction chamber; a sputtering gas injection port(111a) that is installed on the sputtering chamber to inject a sputtering gas into the sputtering chamber; a gas outlet(112a) that is formed on the pumping chamber to exhaust gases in the reaction chamber and the sputtering chamber to the outside; a substrate support(120) which is installed in the sputtering chamber to support a substrate(122) in such a way that the substrate support is reciprocated side to side from the sputtering chamber to the reaction chamber through the pumping chamber; and a sputtering target support(130) that is installed in the sputtering chamber to support a sputtering target(132), wherein the sputtering target is a metallic target, and the substrate support and the sputtering target support are installed in the sputtering chamber in such a way that they are vertically oppositely directed to each other.

Abstract translation: 目的：提供一种用于制造薄膜的装置，以解决通过制造化合物薄膜来防止反应气体与溅射气体混合的反应稳定性和溅射速率和薄膜组合物的均匀性劣化的常规问题。 构成：薄膜制造装置包括处理室（100），其由左侧由垂直隔板（100a）分为反应室（114），泵送室（112）和溅射室（110）三部分， 并且其中在垂直隔板上形成贯通孔，使得三个部分实际连接; 反应气体注入口（114a），其安装在所述反应室中以将反应气体注入所述反应室中; 溅射气体注入口（111a），其安装在所述溅射室上以将溅射气体注入到所述溅射室中; 气体出口（112a），其形成在泵送室上以将反应室中的气体和溅射室排出到外部; 衬底支撑件（120），其安装在所述溅射室中以支撑衬底（122），使得所述衬底支撑件通过所述泵送室从所述溅射室一侧往复运动到所述反应室; 以及安装在溅射室中以支撑溅射靶（132）的溅射靶支撑件（130），其中所述溅射靶是金属靶，并且所述衬底支撑件和所述溅射靶支撑件以这样的方式安装在所述溅射室中 它们相互垂直相对的方式。

公开(公告)号：KR100390576B1

公开(公告)日：2003-07-07

申请号：KR1020010046343

申请日：2001-07-31

Applicant: 한국과학기술원

Inventor： 염도준 ,  이병수 ,  정국채

IPC: C23C14/34

Abstract: PURPOSE: An apparatus for fabricating thin film is provided to solve conventional problems of a bad effect on reaction stability and uniformity deterioration of sputtering rate and thin film composition by manufacturing a compound thin film as preventing mixing of reaction gas with sputtering gas. CONSTITUTION: The apparatus for fabricating thin film comprises a process chamber(100) which is divided into three parts of reaction chamber(114), pumping chamber(112) and sputtering chamber(110) from the left side by vertical partitions(100a), and in which penetration holes are formed on the vertical partitions so that the three parts are actually connected; a reaction gas injection port(114a) that is installed on the reaction chamber to inject a reaction gas into the reaction chamber; a sputtering gas injection port(111a) that is installed on the sputtering chamber to inject a sputtering gas into the sputtering chamber; a gas outlet(112a) that is formed on the pumping chamber to exhaust gases in the reaction chamber and the sputtering chamber to the outside; a substrate support(120) which is installed in the sputtering chamber to support a substrate(122) in such a way that the substrate support is reciprocated side to side from the sputtering chamber to the reaction chamber through the pumping chamber; and a sputtering target support(130) that is installed in the sputtering chamber to support a sputtering target(132), wherein the sputtering target is a metallic target, and the substrate support and the sputtering target support are installed in the sputtering chamber in such a way that they are vertically oppositely directed to each other.

Abstract translation: 目的：提供一种用于制造薄膜的设备，以解决通过制造复合薄膜以防止反应气体与溅射气体混合而对溅射速率和薄膜组合物的反应稳定性和均匀性劣化具有不利影响的传统问题。 本发明的薄膜制造设备包括由垂直隔板（100a）从左侧分成反应室（114），泵室（112）和溅射室（110）三部分的处理室（100） 并且其中在垂直隔板上形成有穿透孔，使得三个部分实际连接; 反应气体注入口（114a），其安装在反应室上以将反应气体注入反应室; 溅射气体注入口（111a），其安装在所述溅射室上以将溅射气体注入所述溅射室; 气体出口（112a），其形成在所述泵室上以将所述反应室和所述溅射室中的气体排出到外部; 衬底支撑件（120），所述衬底支撑件（120）安装在所述溅射室中以支撑衬底（122），使得所述衬底支撑件通过所述增压室从所述溅射室并排地往复运动到所述反应室; 以及安装在所述溅射室中以支撑溅射靶（132）的溅射靶支撑件（130），其中，所述溅射靶是金属靶，并且所述基板支撑件和所述溅射靶支撑件被安装在所述溅射室中 这是一种垂直相反的方式。