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公开(公告)号：KR1020080082265A
公开(公告)日：2008-09-11
申请号：KR1020070022899
申请日：2007-03-08
Applicant: 한국과학기술원
CPC classification number: H01L39/2432 , C23C14/562 , H01L39/2422
Abstract: An apparatus for continuously manufacturing a superconducting tape is provided to apply an EDDC(Evaporation using Drum in Dual Chamber) scheme to an arbitrarily long tape member by continuously supplying and recollecting the tape without damaging the superconducting tape. An apparatus for continuously manufacturing a superconducting tape includes a chamber, a hollow cylindrical drum(102), a release reel(104a), a winding reel(104b), and a transfer unit. A superconducting material is deposited in the chamber. The hollow cylindrical drum is installed in the chamber and arranges a superconducting tape material on an outer periphery thereof. The cylindrical drum heats the superconducting tape material. The release reel is installed on one end of the cylindrical drum and supplies the superconducting tape material, on which the superconducting material is deposited. The winding reel is implemented on the other end of the cylindrical drum and recollects the superconducting tape material after a deposition process. The transfer unit transfers the superconducting tape material from the release reel to the winding reel.
Abstract translation: 提供一种用于连续制造超导带的设备，用于通过连续地提供和回收带而不损坏超导带来将EDDC（使用双腔蒸发鼓）方案应用于任意长的带部件。 一种用于连续制造超导带的装置，包括一个腔室，一个中空的圆筒形鼓（102），一个释放卷轴（104a），一个卷绕卷轴（104b）和一个传送单元。 超导材料沉积在腔室中。 中空圆柱形滚筒安装在腔室中，并在其外周上布置超导带材料。 圆柱形滚筒加热超导带材料。 释放卷轴安装在圆筒形滚筒的一端，并提供超导材料，超导材料在其上沉积。 卷绕卷轴在圆柱形滚筒的另一端上实现，并且在沉积工艺之后重新收集超导带材料。 转印单元将超导带材料从释放卷轴传送到卷绕卷轴。
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公开(公告)号：KR100910613B1
公开(公告)日：2009-08-04
申请号：KR1020070022899
申请日：2007-03-08
Applicant: 한국과학기술원
CPC classification number: H01L39/2432 , C23C14/562 , H01L39/2422
Abstract: 초전도 테이프 선재의 연속 제조장치에 관해 개시한다. EDDC(Evaporation using Drum in Dual Chamber) 방식은 고온 초전도 테이프 선재를 대량 생산하는 데 필요한 적합한 방식으로 확인되었다. 그러나 이 방법은 한정된 길이의 선재에만 공정을 적용할 수 있다는 것이 단점이다. EDDC 방식을 임의로 긴 선재에 적용하기 위하여 드럼에 두 개의 릴을 장착하여 긴 선재를 감고 풀고 하는 방식으로 공급할 수 있다. 그러나 이때 중요한 문제점은 드럼 위에 나선방식으로 감긴 선재의 이송방식이다. 본 발명은 몇 개의 분리된 무한궤도 벨트를 이용한 것으로서, 이 벨트들이 선재를 싣고 드럼의 축 방향으로 이동함으로써, 선재가 드럼 주위에 연속적 나선감김을 실현하면서 이송되도록 한다.
초전도, 테이프, 선재, EDDC, 무한궤도, 벨트, 홈, 이송, 지지턱부, 연속-
Patent Agency Ranking
公开(公告)号：KR100390576B1
公开(公告)日：2003-07-07
申请号：KR1020010046343
申请日：2001-07-31
Applicant: 한국과학기술원
IPC: C23C14/34
Abstract: PURPOSE: An apparatus for fabricating thin film is provided to solve conventional problems of a bad effect on reaction stability and uniformity deterioration of sputtering rate and thin film composition by manufacturing a compound thin film as preventing mixing of reaction gas with sputtering gas. CONSTITUTION: The apparatus for fabricating thin film comprises a process chamber(100) which is divided into three parts of reaction chamber(114), pumping chamber(112) and sputtering chamber(110) from the left side by vertical partitions(100a), and in which penetration holes are formed on the vertical partitions so that the three parts are actually connected; a reaction gas injection port(114a) that is installed on the reaction chamber to inject a reaction gas into the reaction chamber; a sputtering gas injection port(111a) that is installed on the sputtering chamber to inject a sputtering gas into the sputtering chamber; a gas outlet(112a) that is formed on the pumping chamber to exhaust gases in the reaction chamber and the sputtering chamber to the outside; a substrate support(120) which is installed in the sputtering chamber to support a substrate(122) in such a way that the substrate support is reciprocated side to side from the sputtering chamber to the reaction chamber through the pumping chamber; and a sputtering target support(130) that is installed in the sputtering chamber to support a sputtering target(132), wherein the sputtering target is a metallic target, and the substrate support and the sputtering target support are installed in the sputtering chamber in such a way that they are vertically oppositely directed to each other.
Abstract translation: 目的：提供一种用于制造薄膜的设备，以解决通过制造复合薄膜以防止反应气体与溅射气体混合而对溅射速率和薄膜组合物的反应稳定性和均匀性劣化具有不利影响的传统问题。 本发明的薄膜制造设备包括由垂直隔板（100a）从左侧分成反应室（114），泵室（112）和溅射室（110）三部分的处理室（100） 并且其中在垂直隔板上形成有穿透孔，使得三个部分实际连接; 反应气体注入口（114a），其安装在反应室上以将反应气体注入反应室; 溅射气体注入口（111a），其安装在所述溅射室上以将溅射气体注入所述溅射室; 气体出口（112a），其形成在所述泵室上以将所述反应室和所述溅射室中的气体排出到外部; 衬底支撑件（120），所述衬底支撑件（120）安装在所述溅射室中以支撑衬底（122），使得所述衬底支撑件通过所述增压室从所述溅射室并排地往复运动到所述反应室; 以及安装在所述溅射室中以支撑溅射靶（132）的溅射靶支撑件（130），其中，所述溅射靶是金属靶，并且所述基板支撑件和所述溅射靶支撑件被安装在所述溅射室中 这是一种垂直相反的方式。
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4.发明公开
公开(公告)号：KR1020060067170A
公开(公告)日：2006-06-19
申请号：KR1020040105538
申请日：2004-12-14
Applicant: 한국과학기술원
Abstract: 본 발명에 따른 초전도 전력장치의 효율 향상방법은, 초전도 테이프를 권선하여 제작되는 초전도 전력장치의 효율 향상방법으로서, 상기 초전도 테이프 권선의 일부의 온도를 독자적으로 더욱 낮추어 상기 초전도 테이프 권선에 흐르는 전류를 크게 함으로써 온도가 낮춰지지 않은 다른 부분에서의 자기장 방향을 최대임계전류에 해당하는 자기장 방향과 일치하게 분포시키는 것을 특징으로 한다. 본 발명에 의하면, 온도를 부분적으로 조절함으로써 초전도 전력장치의 효율을 향상시킬 수 있게 된다.
초전도 테이프, 최대임계전류, 자기장, 온도, 효율, 초전도 자석-
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公开(公告)号：KR1020040074694A
公开(公告)日：2004-08-26
申请号：KR1020030010071
申请日：2003-02-18
Applicant: 한국과학기술원
IPC: C23C14/34
CPC classification number: H01J37/3497 , H01J37/3417
Abstract: PURPOSE: A sputtering apparatus is provided which is appropriate for prompt evaporation of high temperature superconductor by improving evaporation rate and capable of reducing influence of plasma on substrate. CONSTITUTION: The sputtering apparatus comprises two outer cylinders(20) equipped with rotation central shafts(22) with being parallel to each other and positioned with being spaced apart from each other in a certain distance; sputtering targets(30) installed to go around the outer surface of the outer cylinders and positioned so that the sputtering targets are always oppositely directed to each other; cooling means installed inside the outer cylinders respectively to cool the sputtering targets; a sputtering gas injection pipe for supplying the sputtering gas so that sputtering gas passes through a part adjacent to center of the sputtering targets oppositely directed to each other; a tape type substrate(70) positioned with being oppositely directed to the sputtering gas injection pipe and supplied so that the substrate is moved with being approximately parallel to the respective rotation central shafts of the outer cylinders; and a plasma power supply means for producing plasma(52) by ionizing sputtering gas.
Abstract translation: 目的：提供溅射装置，适用于通过提高蒸发速率及降低等离子体对基板的影响，迅速蒸发高温超导体。 构成：溅射装置包括配备有旋转中心轴（22）的两个外筒（20），它们彼此平行并且以一定距离彼此间隔开定位; 溅射靶（30）安装成围绕外筒的外表面并定位成使得溅射靶总是相互指向的; 冷却装置分别安装在外筒内部以冷却溅射靶; 溅射气体注入管，其用于供给溅射气体，使得溅射气体通过与溅射靶的相反方向相对的中心附近的部分; 位于与溅射气体注入管相反方向定位的带状基底（70），以使得基板与外筒的旋转中心轴大致平行地移动; 以及用于通过电离溅射气体产生等离子体（52）的等离子体供电装置。
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公开(公告)号：KR1020030012350A
公开(公告)日：2003-02-12
申请号：KR1020010046343
申请日：2001-07-31
Applicant: 한국과학기술원
IPC: C23C14/34
CPC classification number: C23C14/0078 , C23C14/0063 , C23C14/505 , C23C14/568
Abstract: PURPOSE: An apparatus for fabricating thin film is provided to solve conventional problems of a bad effect on reaction stability and uniformity deterioration of sputtering rate and thin film composition by manufacturing a compound thin film as preventing mixing of reaction gas with sputtering gas. CONSTITUTION: The apparatus for fabricating thin film comprises a process chamber(100) which is divided into three parts of reaction chamber(114), pumping chamber(112) and sputtering chamber(110) from the left side by vertical partitions(100a), and in which penetration holes are formed on the vertical partitions so that the three parts are actually connected; a reaction gas injection port(114a) that is installed on the reaction chamber to inject a reaction gas into the reaction chamber; a sputtering gas injection port(111a) that is installed on the sputtering chamber to inject a sputtering gas into the sputtering chamber; a gas outlet(112a) that is formed on the pumping chamber to exhaust gases in the reaction chamber and the sputtering chamber to the outside; a substrate support(120) which is installed in the sputtering chamber to support a substrate(122) in such a way that the substrate support is reciprocated side to side from the sputtering chamber to the reaction chamber through the pumping chamber; and a sputtering target support(130) that is installed in the sputtering chamber to support a sputtering target(132), wherein the sputtering target is a metallic target, and the substrate support and the sputtering target support are installed in the sputtering chamber in such a way that they are vertically oppositely directed to each other.
Abstract translation: 目的：提供一种用于制造薄膜的装置，以解决通过制造化合物薄膜来防止反应气体与溅射气体混合的反应稳定性和溅射速率和薄膜组合物的均匀性劣化的常规问题。 构成：薄膜制造装置包括处理室（100），其由左侧由垂直隔板（100a）分为反应室（114），泵送室（112）和溅射室（110）三部分， 并且其中在垂直隔板上形成贯通孔，使得三个部分实际连接; 反应气体注入口（114a），其安装在所述反应室中以将反应气体注入所述反应室中; 溅射气体注入口（111a），其安装在所述溅射室上以将溅射气体注入到所述溅射室中; 气体出口（112a），其形成在泵送室上以将反应室中的气体和溅射室排出到外部; 衬底支撑件（120），其安装在所述溅射室中以支撑衬底（122），使得所述衬底支撑件通过所述泵送室从所述溅射室一侧往复运动到所述反应室; 以及安装在溅射室中以支撑溅射靶（132）的溅射靶支撑件（130），其中所述溅射靶是金属靶，并且所述衬底支撑件和所述溅射靶支撑件以这样的方式安装在所述溅射室中 它们相互垂直相对的方式。
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