公开(公告)号：KR1020140034348A

公开(公告)日：2014-03-20

申请号：KR1020120096785

申请日：2012-08-31

Applicant: 한국광기술원

Inventor： 김자연 ,  백종협 ,  주진우 ,  정탁 ,  이상헌 ,  오화섭 ,  권민기 ,  강용진 ,  양승배 ,  박형조

IPC: H01L33/36

CPC classification number: H01L33/405 ,  H01L33/32 ,  H01L33/42 ,  H01L2933/0008

Abstract: The present invention is to disclose a light emitting diode and a method of manufacturing the same, which comprise: a reflection electrode layer; a lamination formed on the reflection electrode layer and having an n-type III-nitride group semiconductor layer, a p-type III-nitride group semiconductor layer, and an activating layer formed between the n-type III-nitride group semiconductor layer and the p-type III-nitride group semiconductor layer; a translucent conductive substrate formed on the lamination and having zinc oxide (ZnO); and a pad portion formed on the opposite side of the surface facing the lamination among the transparent conductive substrate, wherein the angle of adjacent sides among a plurality of sides of the lamination is less than 90 degrees or more than 90 degrees.

Abstract translation: 本发明公开了一种发光二极管及其制造方法，它包括：反射电极层; 形成在反射电极层上并具有n型III族氮化物半导体层，p型III族氮化物半导体层和在n型III族氮化物半导体层和 p型III族氮化物半导体层; 形成在层叠上并具有氧化锌（ZnO）的半透明导电基板; 以及形成在所述透明导电性基板的面对所述层叠体的面的相对侧的垫部，所述层叠体的多个侧面中的相邻侧的角度小于90度以上且90度以下。