카르복시산 유도체를 이용한 저온 수계 CI(G)S(CuInxGa1?xSe2) 나노입자의 제조방법
    4.
    发明公开
    카르복시산 유도체를 이용한 저온 수계 CI(G)S(CuInxGa1?xSe2) 나노입자의 제조방법 有权
    使用羧基衍生物的CI(G)S(CUINXGA1-XSE2)纳米颗粒的水基制备方法

    公开(公告)号:KR1020110024157A

    公开(公告)日:2011-03-09

    申请号:KR1020090082043

    申请日:2009-09-01

    Abstract: PURPOSE: A method for manufacturing low temperature water-based copper-indium-(gallium-)selenide(CuIn_xGa_1-xSe_2) nano particles is provided to use carboxylic acid derivative in order to be eco-friendly implemented. CONSTITUTION: A copper complex is prepared by reacting a copper compound and carboxylic acid derivative, represented by chemical formula 1, in an aqueous solvent. A selenium compound is introduced into the copper complex solution, and a copper-selenium complex is prepared. An indium compound is introduced into a copper-selenium complex solution. Copper-indium-(gallium-)selenium nano particles are prepared.

    Abstract translation: 目的:提供一种制造低温水性铜铟 - ( - 硒化镓)(CuIn_xGa_1-xSe_2)纳米颗粒的方法,以使用羧酸衍生物进行环保实施。 构成:通过将化合物1表示的铜化合物和羧酸衍生物在水性溶剂中反应制备铜络合物。 将硒化合物引入铜络合物溶液中,并制备铜 - 硒络合物。 将铟化合物引入铜 - 硒络合物溶液中。 制备了铜 - 铟 - (镓)硒纳米颗粒。

    고분자전해질을 이용한 저온 수계 CI(G)S(CuInxGa1?xSe2) 나노입자의 제조방법
    5.
    发明公开
    고분자전해질을 이용한 저온 수계 CI(G)S(CuInxGa1?xSe2) 나노입자의 제조방법 有权
    使用聚电解质的CI(G)S(CUINXGA1-XSE2)纳米颗粒的低温水基制备方法

    公开(公告)号:KR1020110024174A

    公开(公告)日:2011-03-09

    申请号:KR1020090082061

    申请日:2009-09-01

    Abstract: PURPOSE: A method for manufacturing low temperature water-based copper-indium-gallium-selenium(CuIn_xGa_1-xSe_2) nano particles is provided to control the particle of the copper-indium-gallium-selenium in a nano scale by controlling the size of an intermediate complex. CONSTITUTION: A complex solution containing copper and indium is prepared by reacting a copper compound, an indium compound, and a polymer electrolyte represented by chemical formula 1. A selenium compound is introduced into the complex solution, and copper-indium-(gallium-)selenium nano particles are prepared at low temperature. In chemical formula 1, R1 represents C6 to C30 aryl group, C1 to C18 alkyl group, C2 to C18 alkenyl group, or C3 to C18 cycloalkyl group. R2 is selected from a group including carboxylic acid, sulfonate, sulfate, ester sulfate, and phosphate. M1 is selected from sodium, ammonium, potassium, and amine. n represents an integer of 1 to 1000, and m represents an integer of 1 to 1000.

    Abstract translation: 目的:提供一种制造低温水性铜铟镓硒(CuIn_xGa_1-xSe_2)纳米颗粒的方法,通过控制纳米尺度的铜铟镓硒颗粒的尺寸 中间复合体。 构成:通过铜化合物,铟化合物和由化学式1表示的聚合物电解质的反应制备含有铜和铟的复合溶液。将硒化合物引入复合溶液中,并将铜铟 - (镓) 硒纳米颗粒在低温下制备。 在化学式1中,R 1表示C 6〜C 30芳基,C 1〜C 18烷基,C 2〜C 18烯基或C 3〜C 18环烷基。 R2选自羧酸,磺酸盐,硫酸盐,酯硫酸盐和磷酸盐。 M1选自钠,铵,钾和胺。 n表示1〜1000的整数,m表示1〜1000的整数。

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