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公开(公告)号：KR1020130100041A
公开(公告)日：2013-09-09
申请号：KR1020120020623
申请日：2012-02-28
Applicant: 한국화학연구원
IPC: C01B33/021 , C07B61/00 , B82B3/00
CPC classification number: C01B33/023 , C01P2004/64 , C01P2006/22 , C30B29/06 , C30B31/04
Abstract: PURPOSE: A doping nano-crystalline silicon and a manufacturing method thereof are provided to have nano size and to enhance luminosity and redispersibility and to manufacture easier than doping by existing ion beam. CONSTITUTION: A manufacturing method of doping nano-crystalline silicon comprises the following steps: manufacturing doped nano-crystalline silicon solution by injecting silicon source, doping source and reducing agent into organic solvent; and quenching reducing agent remaining behind in the doped nano-crystalline silicon solution.
Abstract translation: 目的：提供掺杂纳米晶体硅及其制造方法以具有纳米尺寸并提高发光度和再分散性，并且比现有离子束的掺杂更容易制造。 构成：掺杂纳米晶硅的制造方法包括以下步骤：通过将硅源，掺杂源和还原剂注入有机溶剂来制造掺杂的纳米晶体硅溶液; 和在掺杂的纳米晶硅溶液中残留的淬灭还原剂。
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公开(公告)号：KR101287938B1
公开(公告)日：2013-07-22
申请号：KR1020110004574
申请日：2011-01-17
Applicant: 한국화학연구원
IPC: B82B3/00 , C01B33/113 , C01B33/023
Abstract: 본 발명은 캡핑된 나노 결정 실리콘의 제조방법에 관한 것으로, 자세하게는 환원제 및 캡핑제를 유기 용매에 투입하고, 실리콘 원료로서 테트라에톡시실란(TEOS) 또는 테트라메톡시실란(TMOS)을 사용함으로써 불순물이 없고, 재분산성이 우수하며, 합성방법이 단순하고, 환경 부담이 적은 캡핑된 나노 결정 실리콘의 제조방법에 관한 것이다.
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公开(公告)号：KR1020120083108A
公开(公告)日：2012-07-25
申请号：KR1020110004574
申请日：2011-01-17
Applicant: 한국화학연구원
IPC: B82B3/00 , C01B33/113 , C01B33/023
CPC classification number: C01B33/029 , B82Y30/00 , B82Y40/00 , C01B33/023 , C01B33/113 , C01P2004/64
Abstract: PURPOSE: A manufacturing method of nano-crystal silicon is provided to synthesize high purity nanocrystalline silicon having luminosity and redispersibility through simple processes. CONSTITUTION: A manufacturing method of the nano-crystal silicon comprises the following steps: adding a reducing agent and a capping agent to an organic solvent; manufacturing capped silicon dispersed solution by adding tetraethoxysilane(TEOS) or tetramethoxysilane(TMOS); adding a phase-separation solvent to the silicon dispersed solution; and separating the silicon solution from the reaction mixture of the previous step. The capping reagent is selected from C5-C20 alcohol, amine, thiol or fatty acid. 2-6 moles of the reducing agent is added for 1mole of tetraethoxysilane(TEOS) or tetramethoxysilane(TMOS). 0.01-100 moles of the capping reagent is added for 1 mole of tetraethoxysilane(TEOS) or tetramethoxysilane(TMOS).
Abstract translation: 目的：提供纳米晶硅的制造方法，通过简单的工艺合成具有发光度和再分散性的高纯度纳米晶硅。 构成：纳米晶体硅的制造方法包括以下步骤：向有机溶剂中加入还原剂和封端剂; 通过加入四乙氧基硅烷（TEOS）或四甲氧基硅烷（TMOS）制造封端的硅分散溶液; 向硅分散溶液中加入相分离溶剂; 并将硅溶液与前一步骤的反应混合物分离。 封端剂选自C 5 -C 20醇，胺，硫醇或脂肪酸。 向1摩尔四乙氧基硅烷（TEOS）或四甲氧基硅烷（TMOS）中加入2-6摩尔还原剂。 为1摩尔四乙氧基硅烷（TEOS）或四甲氧基硅烷（TMOS）加入0.01-100摩尔的封端剂。
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