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公开(公告)号:KR1020130041002A
公开(公告)日:2013-04-24
申请号:KR1020130027712
申请日:2013-03-15
Applicant: 한국화학연구원
IPC: C01B33/021 , B82B1/00 , B82B3/00
CPC classification number: C01B33/023 , C01P2004/64 , C30B29/06
Abstract: PURPOSE: A method of manufacturing nano crystalline silicon is provided to manufacture a hydrophilic or hydrophobic silicon particle based on a capping reagent. CONSTITUTION: A method of manufacturing nano crystalline silicon comprises the following steps. A capping reagent chosen from a reduced agent, C5-C20 alcohol, amin, thiol or fatty acid is added to an organic solution. Tetraehoxysilane(TEOS) or tetramethoxysilane(TMOS) are added to the organic solution to manufacture a spraying solution. The manufactured silicon spraying solution is added to a phase separating solution. The mixed solution from the phase separating solution is separated to make a silicon solution.
Abstract translation: 目的:提供一种制造纳米晶体硅的方法,以制造基于封盖剂的亲水或疏水硅颗粒。 构成:制造纳米晶体硅的方法包括以下步骤。 将选自还原剂C5-C20醇,氨基,硫醇或脂肪酸的封端剂加入到有机溶液中。 将四乙氧基硅烷(TEOS)或四甲氧基硅烷(TMOS)加入到有机溶液中以制备喷雾溶液。 将制造的硅喷雾溶液加入到相分离溶液中。 将相分离溶液的混合溶液分离,制成硅溶液。
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公开(公告)号:KR101346240B1
公开(公告)日:2014-01-02
申请号:KR1020130027712
申请日:2013-03-15
Applicant: 한국화학연구원
IPC: C01B33/021 , B82B1/00 , B82B3/00
Abstract: 본 발명은 캡핑된 나노 결정 실리콘의 제조방법에 관한 것으로, 자세하게는 환원제 및 캡핑제를 유기 용매에 투입하고, 실리콘 원료로서 테트라에톡시실란(TEOS) 또는 테트라메톡시실란(TMOS)을 사용함으로써 불순물이 없고, 재분산성이 우수하며, 합성방법이 단순하고, 환경 부담이 적은 캡핑된 나노 결정 실리콘의 제조방법에 관한 것이다.
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公开(公告)号:KR101318939B1
公开(公告)日:2013-11-13
申请号:KR1020120104796
申请日:2012-09-20
Applicant: 한국화학연구원
IPC: B82B3/00 , C01B33/021
Abstract: The present invention relates to a method for preparing silicon nanoparticles. The preparation method according to the present invention is more simple than a known preparation method and economically prepares silicon nanoparticles. Silicon nanoparticles prepared by the method of the present invention have small and uniform sizes, and provide excellent electrical characteristics during the formation of a silicon thin film.
Abstract translation: 本发明涉及一种制备硅纳米粒子的方法。 根据本发明的制备方法比已知的制备方法更简单,并且经济地制备硅纳米颗粒。 通过本发明的方法制备的硅纳米颗粒具有小而均匀的尺寸,并且在形成硅薄膜期间提供优异的电特性。
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