公开(公告)号：KR1020120058216A

公开(公告)日：2012-06-07

申请号：KR1020100119897

申请日：2010-11-29

Applicant: 현대자동차주식회사

Inventor： 이용성 ,  홍경국 ,  안성재 ,  이종석

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L21/3148 ,  H01L21/265 ,  H01L29/7811

Abstract: PURPOSE: A power semiconductor device is provided to reduce manufacturing costs by not executing an ion implantation process and a diffusion process and simplifying process. CONSTITUTION: An epitaxial layer(110) of an n-type is formed on the upper side of a semiconductor substrate(100) of the n-type. An epitaxial pattern(120) of a p-type is formed on the upper side of the epitaxial layer of the n-type. An insulating layer(130) is formed at the upper side of the exposed epitaxial pattern of the p-type and the exposed epitaxial layer of the n-type. A metal material(140) is formed at the upper side of the epitaxial layer of the n-type, the epitaxial pattern of the p-type, and the insulating layer. An ohmic contact layer(160) is formed at the lower side of the semiconductor substrate by evaporating the metal material.

Abstract translation: 目的：提供功率半导体器件，以通过不执行离子注入工艺和扩散过程并简化工艺来降低制造成本。 构成：n型的外延层（110）形成在n型半导体衬底（100）的上侧。 在n型外延层的上侧形成p型外延图案（120）。 绝缘层（130）形成在p型暴露的外延图案的上侧和n型的暴露的外延层上。 金属材料（140）形成在n型外延层的上侧，p型外延图形和绝缘层上。 通过蒸发金属材料，在半导体衬底的下侧形成欧姆接触层（160）。

公开(公告)号：KR101154674B1

公开(公告)日：2012-06-08

申请号：KR1020100113041

申请日：2010-11-12

Applicant: 현대자동차주식회사

Inventor： 이용성 ,  홍경국 ,  안성재 ,  이종석

IPC: H01L21/316

Abstract: 본발명의산화막의형성방법은실리콘카바이드웨이퍼상부에플라즈마화학기상증착방법으로 1차전처리공정을수행하여단계와, 상기 1차전처리공정이후유도결합플라즈마화학증착(Inductively Coupled Plasma Chemical Vapor Deposition)방법으로 2차전처리공정을수행하는단계와, 상기 2차전처리공정이후건식산화공정을수행하여산화막을형성하는단계와, 상기산화막에 N어닐링공정을수행하는단계를포함하는것을특징으로한다.

公开(公告)号：KR1020120051554A

公开(公告)日：2012-05-22

申请号：KR1020100113041

申请日：2010-11-12

Applicant: 현대자동차주식회사

Inventor： 이용성 ,  홍경국 ,  안성재 ,  이종석

IPC: H01L21/316

CPC classification number: H01L21/02274 ,  H01L21/28194 ,  H01L21/324

Abstract: PURPOSE: An oxide film formation method is provided to perform first and second preprocessing processes before performing a dry oxidation process, thereby improving growth rate of an oxide film. CONSTITUTION: A silicon carbide wafer(100) is arranged. A first nitride film(102) is formed on the upper part of the wafer by performing a first preprocessing process. A second nitride film(104) is formed on the upper part of the first nitride film by performing a second preprocessing process. An oxide film(110) is formed by forming a dry oxidation process on the second nitride film. The oxide film comprises a silicon-nitrogen-oxygen(106) film and a silicon oxide film(108). An N2 annealing process(112) is performed on the oxide film.

Abstract translation: 目的：提供氧化膜形成方法，以在进行干燥氧化处理之前进行第一和第二预处理，从而提高氧化膜的生长速度。 构成：设置碳化硅晶片（100）。 通过执行第一预处理工艺，在晶片的上部形成第一氮化物膜（102）。 通过进行第二预处理工艺，在第一氮化物膜的上部形成第二氮化物膜（104）。 通过在第二氮化物膜上形成干式氧化工艺形成氧化膜（110）。 氧化膜包括硅 - 氮 - 氧（106）膜和氧化硅膜（108）。 对氧化膜进行N2退火处理（112）。