公开(公告)号：JPH11121691A

公开(公告)日：1999-04-30

申请号：JP22956198

申请日：1998-08-14

Applicant: ABB RESEARCH LTD

Inventor： ETTER PETER ,  STUCK ALEXANDER DR ,  ZEHRINGER RAYMOND

IPC: H01L23/36 ,  H01L23/367 ,  H01L23/473 ,  H01L25/07 ,  H01L25/18

Abstract: PROBLEM TO BE SOLVED: To obtain a power semiconductor module constituted of submodules having integrated heat sinks. SOLUTION: Each of submodules 2 comprises a board 6 having at least a semiconductor chip 3 soldered to its top 6a, while its bottom 6b is sealed together with a heat sink 7 having a knob or rib-like AlSiC, CuSiC, AlSi, Al or Cu cooling body 7a. A cooling structure 7b may be directly sealed tougher with the board 6. The power semiconductor module having heat sinks 7 integrated with the submodules 2 is characterized by enhanced reliability and long life, compact design and high power density. The modular structures 2, 7 of this module 1 are compatible with integration with other elements, e.g., control electronics, printed circuit boards and bus bars.

公开(公告)号：DE10117775A1

公开(公告)日：2002-10-17

申请号：DE10117775

申请日：2001-04-09

Applicant: ABB RESEARCH LTD

Inventor： ZWICK FABIAN ,  STUCK ALEXANDER ,  ZEHRINGER RAYMOND

IPC: H01L21/48 ,  H01L23/14 ,  H01L23/373 ,  H01L21/58

Abstract: Power semiconductor module comprises a semiconductor chip (16) arranged on a flat electrode (24) connected to a base plate (11) via an insulating intermediate layer (20). The intermediate layer has air holes having an average diameter of less than 1 microns m, preferably 10-100 nm. An Independent claim is also included for a process for the production of the power semiconductor module. Preferred Features: The intermediate layer is formed as a ceramic film consisting of a nano-ceramic, in which the film has a grain size of 10-100 nm. The edges and corners of the electrode are rounded and covered by the intermediate layer. The electrode is made from copper.

公开(公告)号：CZ20001130A3

公开(公告)日：2001-04-11

申请号：CZ20001130

申请日：2000-03-29

Applicant: ABB RESEARCH LTD

Inventor： STEIMER PETER ,  STUCK ALEXANDER ,  ZELLER HANSRUEDI ,  ZEHRINGER RAYMOND

IPC: H01L23/12

公开(公告)号：DE19914815A1

公开(公告)日：2000-10-05

申请号：DE19914815

申请日：1999-03-31

Applicant: ABB RESEARCH LTD

Inventor： STUCK ALEXANDER ,  STEIMER PETER ,  ZELLER HANSRUEDI ,  ZEHRINGER RAYMOND

IPC: H01L21/52 ,  H01L23/13 ,  H01L23/373 ,  H01L23/60 ,  H01L25/07 ,  H01L25/18 ,  H05K1/02 ,  H05K1/03 ,  H05K1/18 ,  H01L23/12 ,  H01L25/04

Abstract: The semiconductor module has a base element (2) supporting an insulation element (3) having a metal layer (4,5) on 2 opposing sides, with at least one semiconductor element (6) mounted on the insulation element. The upper metal layer (5) is curved upwards for projecting above the semiconductor elements, with the adjacent surface of the insulation layer having a corresponding curvature, for defining a locating recess for the semiconductor elements.