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    Semiconductor device
    4.
    发明专利
    Semiconductor device 有权
    半导体器件

    公开(公告)号：JP2011063688A

    公开(公告)日：2011-03-31

    申请号：JP2009214556

    申请日：2009-09-16

    Applicant: Adeka Corp ,  Kansai Electric Power Co Inc:The ,  株式会社Adeka ,  関西電力株式会社

    Inventor： IZUMI TORU ,  ASANO KATSUNORI ,  SUGAWARA YOSHITAKA

    IPC: C08L83/07 ,  C08L83/05 ,  H01L23/29 ,  H01L23/31

    CPC classification number: H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/1301 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

    Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device in which high heat resistance and high voltage endurance can be attained and adhesiveness between a covering section of a semiconductor device and a support of a semiconductor device can be improved, thus allowing the use thereof in high temperatures. SOLUTION: The semiconductor device includes a first covering section 15 and a second covering section. The first covering section 15, which covers SiC pn diode elements 1 and 2, is formed from a first silicon-containing curable composition which contains a silicon-containing polymer having a cyclic siloxane structure and a linear siloxane structure and a molecular weight of 3,000-1,000,000 and a platinum-based catalyst which is a curing reaction catalyst. The second covering section 16 is produced from a silicon-containing curable composition which covers the whole surface 15A of the first covering section 15 and is not in contact with a support 3. The second covering section 16 is formed from a second silicon-containing curable composition in which alumina particles having a particle size of 20 μm are blended with the first silicon-containing curable composition as insulating ceramics and have a volume filling factor of 50%. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 解决的问题：为了提供可以获得高耐热性和高耐久性的半导体器件，并且可以提高半导体器件的覆盖部分和半导体器件的支撑体之间的粘附性，从而允许使用 在高温下。 解决方案：半导体器件包括第一覆盖部分15和第二覆盖部分。 覆盖SiC pn二极管元件1和2的第一覆盖部分15由第一含硅可固化组合物形成，该第一含硅可固化组合物含有具有环状硅氧烷结构和直链硅氧烷结构且分子量为3,000- 作为固化反应催化剂的铂系催化剂。 第二覆盖部分16由覆盖第一覆盖部分15的整个表面15A并且不与载体3接触的含硅可固化组合物制成。第二覆盖部分16由第二含硅可固化 其中将粒径为20μm的氧化铝颗粒与第一含硅可固化组合物作为绝缘陶瓷共混并且体积填充系数为50％的组合物。 版权所有（C）2011，JPO＆INPIT

    Silicon-containing curable composition and thermally cured material therefrom
    5.
    发明专利
    Silicon-containing curable composition and thermally cured material therefrom 审中-公开
    含硅的可固化组合物和热固化材料

    公开(公告)号：JP2006283012A

    公开(公告)日：2006-10-19

    申请号：JP2006061798

    申请日：2006-03-07

    Applicant: Adeka Corp ,  Kansai Electric Power Co Inc:The ,  株式会社Adeka ,  関西電力株式会社

    Inventor： HIWATARI KENICHIRO ,  SUEYOSHI TAKASHI ,  SHANADO TADASHI ,  SHOJI YOSHIKAZU ,  SUGAWARA YOSHITAKA

    IPC: C08L83/07 ,  C08L83/05

    Abstract: PROBLEM TO BE SOLVED: To provide a silicon-containing curable composition, which is excellent in stability, transparency and curability, and can be used for forming a cured product excellent in various properties such as crack resistance, heat resistance, solvent resistance and alkali resistance. SOLUTION: The silicon-containing curable composition includes at least one silicon-containing polymer among component (A), component (B) and component (C). The component (A) is a silicon-containing polymer having one or more reactive groups selected from the group consisting of Si-CH=CH 2 , Si-R 1 -CH=CH 2 and Si-R 1 -OCOC(R 2 )=CH 2 and having at least one bridging structure by an Si-O-Si bond. The component (B) is a silicon-containing polymer having Si-H group and having at least one bridging structure by an Si-O-Si bond. The component (C) is a silicon-containing polymer having one or more above reactive groups and further an Si-H group and having at least one bridging structure by an Si-O-Si bond. COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：提供稳定性，透明性和固化性优异的含硅可固化组合物，并且可用于形成各种性能如抗裂性，耐热性，耐溶剂性优异的固化产物 和耐碱性。 解决方案：含硅可固化组合物包含组分（A），组分（B）和组分（C）中的至少一种含硅聚合物。 组分（A）是具有一个或多个反应性基团的含硅聚合物，所述反应性基团选自Si-CH = CH ，Si-R 1 = CH 2 和Si-R 1 -OCOC（R SP SP 2）= CH 2 ，并且具有至少一个 通过Si-O-Si键的桥连结构。 组分（B）是具有Si-H基并通过Si-O-Si键具有至少一个桥连结构的含硅聚合物。 组分（C）是具有一个或多个上述反应性基团并且还含有Si-H基并且通过Si-O-Si键具有至少一个桥连结构的含硅聚合物。 版权所有（C）2007，JPO＆INPIT

    Semiconductor device
    6.
    发明专利
    Semiconductor device 有权
    半导体器件

    公开(公告)号：JP2009212342A

    公开(公告)日：2009-09-17

    申请号：JP2008054630

    申请日：2008-03-05

    Applicant: Adeka Corp ,  Kansai Electric Power Co Inc:The ,  株式会社Adeka ,  関西電力株式会社

    Inventor： OKADA SHINICHI ,  SUGAWARA YOSHITAKA ,  KIMURA RYOJI ,  SAITO SEIICHI ,  SUEYOSHI TAKASHI

    IPC: H01L23/29 ,  H01L23/31

    CPC classification number: H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/1301 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

    Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device can attain high heat resistance and high voltage resistance and improve tight adhesiveness between a cover part for a semiconductor element and a support. SOLUTION: In a semiconductor device, a cover part 15 covering a GTO thyristor element 1 contains a silicon-containing polymer, including a bridged structure using siloxane (Si-O-Si binder) in one or more parts and is formed from a first silicon-containing curable composition containing a patina catalyst, that is a hardening reactive catalyst, and an iron group containing rust. Furthermore, the cover part 15 and a cover part 16, that covers an anode terminal 5 and a gate terminal 8 on a support 11, are formed from a second silicon-containing curable composition, in which alumina fine particles having a grain size of 20 μm are blended as insulated ceramics in the first silicon-containing curable composition at a volume filling factor of 50%. COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题：提供半导体器件可以获得高耐热性和高耐压性，并且改善用于半导体元件的盖部件和支撑件之间的紧密粘合性。 解决方案：在半导体器件中，覆盖GTO晶闸管元件1的覆盖部分15包含含硅聚合物，其包含使用硅氧烷（Si-O-Si粘合剂）的一个或多个部分的桥接结构，并由 含有铜绿色催化剂的第一种含硅固化性组合物，即硬化反应催化剂和含有铁锈的铁基团。 此外，覆盖部分15和覆盖阳极端子5和支撑体11上的栅极端子8的覆盖部分16由第二含硅可固化组合物形成，其中粒径为20微米的氧化铝细颗粒 以50％的体积填充系数将μm作为绝缘陶瓷混合在第一含硅可固化组合物中。 版权所有（C）2009，JPO＆INPIT

    Silicon-containing compound, curable composition, and cured material
    7.
    发明专利
    Silicon-containing compound, curable composition, and cured material 有权
    含硅化合物，可固化组合物和固化材料

    公开(公告)号：JP2008266484A

    公开(公告)日：2008-11-06

    申请号：JP2007112738

    申请日：2007-04-23

    Applicant: Adeka Corp ,  Kansai Electric Power Co Inc:The ,  株式会社Adeka ,  関西電力株式会社

    Inventor： SUEYOSHI TAKASHI ,  HIWATARI KENICHIRO ,  SHANADO TADASHI ,  SHOJI YOSHIKAZU ,  SAITO SEIICHI ,  SUGAWARA YOSHITAKA

    IPC: C08G77/44 ,  C08L83/05 ,  C08L83/07

    CPC classification number: C08G77/50 ,  C08L83/14 ,  C08L83/00

    Abstract: PROBLEM TO BE SOLVED: To provide a silicon-containing curable composition excellent in a handling property and a curing property in which an obtained cured article is excellent in heat-resistance and flexibility.
    SOLUTION: The curable composition comprises a silicon-containing compound represented by general formula (1), the compound in which Z is a hydrogen atom in general formula (1), the compound in which Z is a 2-4C alkenyl group or an alkynyl group in general formula (1), and a hydrosilylated reaction catalyst. In the formula, R
    a -R
    g are a 1-12C saturated aliphatic hydrocarbon group or a 6-12C aromatic hydrocarbon group (however, R
    e and R
    f do not simultaneously become the 1-12C saturated aliphatic hydrocarbon group), Y is a 2-4C alkylene group, Z is a hydrogen atom or a 2-4C alkenyl group or an alkynyl group, K is an integer of 2-7, T is an integer of 1-7, and P is an integer of 0-3. M and N are N:M=1:1 to 1:100, are the number in which total of all Ms and all Ns becomes 15 or higher, and are the number in which a mass average molecular weight of the compound is made to 3,000-1,000,000.
    COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种处理性能和固化性能优异的含硫可固化组合物，其中获得的固化物具有优异的耐热性和柔软性。 解决方案：可固化组合物包含通式（1）表示的含硅化合物，其中Z为通式（1）中的氢原子的化合物，其中Z为2-4C烯基的化合物 或通式（1）中的炔基和氢化硅烷化反应催化剂。 在该式中，R 16是具有1-12个碳原子的饱和脂族烃基或6-12个碳芳族烃基（然而，R“ SP>和R f 不同时成为1-12C饱和脂族烃基），Y为2-4C亚烷基，Z为氢原子或2-4C烯基或炔基 组，K为2-7的整数，T为1-7的整数，P为0-3的整数。 M和N为N:M = 1:1至1:100，是所有Ms和全部Ns的总和变为15或更高的数，并且是化合物的质均分子量为 3,000-1,000,000。 版权所有（C）2009，JPO＆INPIT

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