公开(公告)号：US10920313B2

公开(公告)日：2021-02-16

申请号：US16326973

申请日：2017-07-05

Applicant: ADEKA CORPORATION

Inventor： Tomoharu Yoshino ,  Masaki Enzu ,  Akihiro Nishida ,  Atsushi Yamashita

IPC: C23C16/18 ,  C07C251/08 ,  C07F13/00 ,  C07F15/04 ,  C23C16/455

Abstract: A diazadienyl compound represented by General Formula (I) below: wherein R1 represents a C1-6 linear or branched alkyl group, and M represents nickel atom or manganese atom. In particular, since a compound in which R1 in General Formula (I) is a methyl group has a high vapor pressure and a high thermal decomposition starting temperature, the compound is useful as a raw material for forming a thin film by a CVD method or ALD method.

公开(公告)号：US12264168B2

公开(公告)日：2025-04-01

申请号：US17620934

申请日：2020-06-10

Applicant: ADEKA CORPORATION

Inventor： Masaki Enzu ,  Masako Hatase ,  Keisuke Takeda

IPC: C07F15/00 ,  C23C16/18

Abstract: The present invention provides a ruthenium compound represented by the following general formula (1) or (2), a thin-film forming raw material containing the ruthenium compound, and a method of producing a thin-film including using the thin-film forming raw material: where R1 to R12 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a fluorine atom-containing group, and “n” represents an integer from 0 to 2, provided that at least one of R1 to R12 represents the fluorine atom-containing group; where R13 to R17 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, and a total number of the carbon atoms of R13 to R17 is 3 or more.

公开(公告)号：US10253408B2

公开(公告)日：2019-04-09

申请号：US15559127

申请日：2016-05-17

Applicant: ADEKA CORPORATION

Inventor： Tomoharu Yoshino ,  Masaki Enzu ,  Akihiro Nishida ,  Nana Sugiura

IPC: C07F13/00 ,  C07F15/04 ,  C07F15/06 ,  C23C16/18 ,  H01L21/285

Abstract: A novel compound represented by the general formula (I) or (II) below: [in the formula, each of R1 and R2 independently represent a C1˜12 hydrocarbon group, and Si(R3)3 is optionally substituted for a hydrogen atom in the hydrocarbon group; however, R1 and R2 are different groups; R3 represents a methyl or ethyl group; M represents a metal atom or silicon atom; and n is an integer from 1 to 4].

公开(公告)号：US12104245B2

公开(公告)日：2024-10-01

申请号：US17771181

申请日：2020-10-19

Applicant: ADEKA CORPORATION

Inventor： Atsushi Sakurai ,  Masako Hatase ,  Masaki Enzu ,  Keisuke Takeda ,  Ryota Fukushima ,  Atsushi Yamashita

IPC: C23C16/18 ,  C07D487/10 ,  C07F1/00 ,  C07F3/00 ,  C07F7/22 ,  C07F13/00 ,  C07F15/04 ,  C07F15/06 ,  C23C16/455

CPC classification number: C23C16/18 ,  C07D487/10 ,  C07F1/005 ,  C07F3/003 ,  C07F7/2284 ,  C07F13/005 ,  C07F15/045 ,  C07F15/065 ,  C23C16/45553

Abstract: Provided is a thin-film forming raw material containing a compound represented by the following formula (1):




in the formula (1), R1 to R5 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a group containing a fluorine atom, M represents a metal atom, and “n” represents a valence of the metal atom represented by M, provided that at least one of R2, R3, and R4 represents the group containing a fluorine atom.

公开(公告)号：US11408069B2

公开(公告)日：2022-08-09

申请号：US17291446

申请日：2019-10-28

Applicant: ADEKA CORPORATION

Inventor： Akihiro Nishida ,  Masaki Enzu

IPC: C23C16/455 ,  C23C16/18

Abstract: A method of the present invention for producing a metallic ruthenium thin film on a substrate by atomic layer deposition includes: (A) a step of introducing a feedstock gas containing a specific ruthenium compound into a treatment atmosphere, and allowing the ruthenium compound to deposit on the substrate; and a step of introducing a reactive gas containing a specific compound into the treatment atmosphere, and allowing the reactive gas to react with the specific ruthenium compound deposited on the substrate.

公开(公告)号：US10011623B2

公开(公告)日：2018-07-03

申请号：US15318755

申请日：2015-07-16

Applicant: ADEKA CORPORATION

Inventor： Atsushi Sakurai ,  Masako Hatase ,  Tomoharu Yoshino ,  Masaki Enzu

IPC: C07F15/06 ,  C07F15/04 ,  C07C251/08 ,  C07F7/08 ,  C07C251/76 ,  C07F7/10 ,  C23C16/18

CPC classification number: C07F15/065 ,  C07C251/08 ,  C07C251/76 ,  C07F7/081 ,  C07F7/10 ,  C07F15/04 ,  C07F15/045 ,  C07F15/06 ,  C23C16/18 ,  C23C16/45525

Abstract: The alkoxide compound of the present invention is characteristically represented by the following general formula (I):

公开(公告)号：US09994593B2

公开(公告)日：2018-06-12

申请号：US15306812

申请日：2015-04-08

Applicant: ADEKA CORPORATION

Inventor： Tomoharu Yoshino ,  Masaki Enzu ,  Atsushi Sakurai ,  Akihiro Nishida ,  Makoto Okabe

IPC: C07F1/08 ,  C07C215/08 ,  C23C16/18 ,  H01L21/28 ,  H01L21/285 ,  C09D1/00 ,  C09D5/24 ,  C23C16/06 ,  C23C16/455

CPC classification number: C07F1/08 ,  C07C215/08 ,  C09D1/00 ,  C09D5/24 ,  C23C16/06 ,  C23C16/18 ,  C23C16/45525 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/28 ,  H01L21/285

Abstract: This invention provides a copper compound represented by General Formula (I) below. In General Formula (I), R1 to R3 independently represent a linear or branched alkyl group with a carbon number of 1 to 5; provided that R1 and R2 are a methyl group, R3 represents a linear or branched alkyl group with a carbon number of 2 to 5; and provided that R1 is a methyl group and R2 is an ethyl group, R3 represents a methyl group or a linear or branched alkyl group with a carbon number of 3 to 5. A starting material for forming a thin film of the present invention includes the copper compound represented by General Formula (I). The present invention can provide a copper compound which has a low melting point, can be conveyed in a liquid state, has a high vapor pressure, and is easily vaporizable, and also a starting material for forming a thin film which uses such a copper compound.

公开(公告)号：US11760771B2

公开(公告)日：2023-09-19

申请号：US16760171

申请日：2018-07-27

Applicant: ADEKA CORPORATION

Inventor： Tomoharu Yoshino ,  Masaki Enzu ,  Nana Okada ,  Masako Hatase

IPC: C07F15/00 ,  C23C16/18 ,  C23C16/455 ,  H01L21/285

CPC classification number: C07F15/0046 ,  C23C16/18 ,  C23C16/45525 ,  C23C16/45553 ,  H01L21/28556 ,  H01L21/28568

Abstract: A ruthenium compound represented by a general formula described in the specification, a raw material which is for forming a thin film and which contains the ruthenium compound, and a method of producing a thin film using the raw material for forming a thin film are provided.

公开(公告)号：US10351584B2

公开(公告)日：2019-07-16

申请号：US15303845

申请日：2015-03-30

Applicant: ADEKA CORPORATION

Inventor： Atsushi Sakurai ,  Masako Hatase ,  Tomoharu Yoshino ,  Masaki Enzu

IPC: C07F15/06 ,  C07C251/08 ,  C23C16/18 ,  H01L21/28 ,  H01L21/285 ,  C23C16/455

Abstract: An alkoxide compound is represented by General Formula (I) below: wherein R1 to R3 each independently represent hydrogen, a C1-12 hydrocarbon group, etc.; R4 represents a C1-12 hydrocarbon group, etc.; L represents hydrogen, halogen, a hydroxyl group, an amino group, an azi group, a phosphido group, a nitrile group, a carbonyl group, a C1-12 hydrocarbon group, etc.; and M represents a metal atom or a silicon atom, n represents an integer of 1 or more, m represents an integer of 0 or more, and n+m represents the valence of the metal atom or silicon atom.

公开(公告)号：US10167304B2

公开(公告)日：2019-01-01

申请号：US15032230

申请日：2014-11-07

Applicant: ADEKA CORPORATION

Inventor： Masako Hatase ,  Masaki Enzu ,  Atsushi Sakurai ,  Tomoharu Yoshino

IPC: C07F15/00 ,  C07C225/14 ,  C23C16/16 ,  C23C16/455

Abstract: Disclosed is a ruthenium compound useful as a precursor in chemical vapor growth, particularly ALD. The compound has good reactivity with a reactive gas, a high vapor pressure, and a low melting point. The compound is represented by general formula (I), wherein R1, R2, and R3 each independently represent a straight or branched chain alkyl group having 1 to 5 carbon atoms, provided that the total number of the carbon atoms of R1 and R2 is 3 to 10. In formula (I), R1 and R2 are each preferably ethyl or isopropyl.